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Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
Open accessAbstract
Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.
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“According to [238], [239], power semiconductor device damages account for approximately 35% of all ASD faults.”
From Fault Diagnosis and Fault-Tolerant Control of PMSM Drives–State of the Art and Future Challenges (2022) · cites this paper as [238]
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Metadata
- Authors
- Yang, S., Xiang, D., Bryant, A., Mawby, P., Ran, L., & Tavner, P.
- Affiliations
- University of Warwick (GB)
- Durham University (GB)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2010-11
- Volume
- 25
- Issue
- 11
- Pages
- 2734-2752
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2167320299
- Cited by
- 1,278
- References
- 135
- Citations by year
- 2026: 65 · 2025: 104 · 2024: 105 · 2023: 137 · 2022: 93 · 2021: 104 · 2020: 93 · 2019: 109 · 2018: 94 · 2017: 79 · 2016: 80 · 2015: 63 · 2014: 60 · 2013: 49 · 2012: 22
- FWCI
- 22.95
- Type
- journal article
- Language
- en
- Open access
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Durham Research Online (Durham University) (acceptedVersion)
- Durham Research Online (Durham University) (submittedVersion, cc-by)
- Funders
- Engineering and Physical Sciences Research Council (EP/E02744X/1, EP/E026923/1)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- condition monitoring, power semiconductor devices, power converters, device reliability, failure mechanisms, reliability modeling, sensor technology, signal processing, power electronics reliability
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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