The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.
How Good Can Monolayer MoS2 Transistors Be?
Abstract
Monolayer molybdenum disulfide (MoS(2)), unlike its bulk form, is a direct band gap semiconductor with a band gap of 1.8 eV. Recently, field-effect transistors have been demonstrated experimentally using a mechanically exfoliated MoS(2) monolayer, showing promising potential for next generation electronics. Here we project the ultimate performance limit of MoS(2) transistors by using nonequilibrium Green's function based quantum transport simulations. Our simulation results show that the strength of MoS(2) transistors lies in large ON-OFF current ratio (>10(10)), immunity to short channel effects (drain-induced barrier lowering ∼10 mV/V), and abrupt switching (subthreshold swing as low as 60 mV/decade). Our comparison of monolayer MoS(2) transistors to the state-of-the-art III-V materials based transistors, reveals that while MoS(2) transistors may not be ideal for high-performance applications due to heavier electron effective mass (m = 0.45 m(0)) and a lower mobility, they can be an attractive alternative for low power applications thanks to the large band gap and the excellent electrostatic integrity inherent in a two-dimensional system.
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Cites
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Ultrahigh electron mobility in suspended graphene
Bolotin, K. I., Sikes, K. J., Jiang, Z., Klima, M., Fudenberg, G., Hone, J., Kim, P., & Stormer, H. L. (2008) · Solid State Communications · doi:10.1016/j.ssc.2008.02.024 · Cited by 8,057
Schwierz, F. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.89 · Cited by 5,267
Wilson, J. A., & Yoffe, A. D. (1969) · Advances in Physics · doi:10.1080/00018736900101307 · Cited by 4,090
Quantum Transport: Atom to Transistor
Datta, S. (2005) · Cambridge University Press eBooks · doi:10.1017/cbo9781139164313 · Cited by 3,227
Fundamentals of Modern VLSI Devices
Taur, Y., & Ning, T. H. (2009) · Cambridge University Press eBooks · doi:10.1017/cbo9781139195065 · Cited by 2,922
Cited by
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Self-citationTwo-Dimensional Transition Metal Carbides
Naguib, M., Mashtalir, O., Carle, J., Presser, V., Lu, J., Hultman, L., Gogotsi, Y., & Barsoum, M. W. (2012) · ACS Nano · doi:10.1021/nn204153h · Cited by 4,769
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
Lee, Y., Zhang, X., Zhang, W., Chang, M., Lin, C., Chang, K., Yu, Y., Wang, J. T., Chang, C., Li, L., et al. (2012) · Advanced Materials · doi:10.1002/adma.201104798 · Cited by 3,422
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Conducting MoS 2 Nanosheets as Catalysts for Hydrogen Evolution Reaction
Voiry, D., Salehi, M., Silva, R., Fujita, T., Chen, M., Asefa, T., Shenoy, V. B., Eda, G., & Chhowalla, M. (2013) · Nano Letters · doi:10.1021/nl403661s · Cited by 2,203
Metal dichalcogenide nanosheets: preparation, properties and applications
Huang, X., Zeng, Z., & Zhang, H. (2013) · Chemical Society Reviews · doi:10.1039/c2cs35387c · Cited by 2,030
Zhang, Y., Chang, T.-R., Zhou, B., Cui, Y.-T., Yan, H., Liu, Z., Schmitt, F., Lee, J., Moore, R., Chen, Y., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2013.277 · Cited by 1,376
Hysteresis in Single-Layer MoS2 Field Effect Transistors
Late, D. J., Liu, B., Matte, H. S. S. R., Dravid, V. P., & Rao, C. N. R. (2012) · ACS Nano · doi:10.1021/nn301572c · Cited by 1,123
Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films
Yu, Y., Li, C., Liu, Y., Su, L., Zhang, Y., & Cao, L. (2013) · Scientific Reports · doi:10.1038/srep01866 · Cited by 882
Voiry, D., Fullon, R., Yang, J., de Carvalho Castro e Silva, C., Kappera, R., Bozkurt, I., Kaplan, D., Lagos, M. J., Batson, P. E., Gupta, G., et al. (2016) · Nature Materials · doi:10.1038/nmat4660 · Cited by 824
High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide
Zheng, J., Zhang, H., Dong, S., Liu, Y., Tai Nai, C., Suk Shin, H., Young Jeong, H., Liu, B., & Ping Loh, K. (2014) · Nature Communications · doi:10.1038/ncomms3995 · Cited by 787
Second harmonic microscopy of monolayer MoS2
Kumar, N., Najmaei, S., Cui, Q., Ceballos, F., Ajayan, P. M., Lou, J., & Zhao, H. (2013) · Physical Review B · doi:10.1103/physrevb.87.161403 · Cited by 699
Qiu, H., Pan, L., Yao, Z., Li, J., Shi, Y., & Wang, X. (2012) · Applied Physics Letters · doi:10.1063/1.3696045 · Cited by 586
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Structural and electronic properties of monolayer group III monochalcogenides
Demirci, S., Avazlı, N., Durgun, E., & Cahangirov, S. (2017) · Physical Review B · doi:10.1103/physrevb.95.115409 · Cited by 432
Sulfur vacancies in monolayer MoS2 and its electrical contacts
Liu, D., Guo, Y., Fang, L., & Robertson, J. (2013) · Applied Physics Letters · doi:10.1063/1.4824893 · Cited by 417
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
Cheng, P., Sun, K., & Hu, Y. H. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b04260 · Cited by 409
Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide
Balendhran, S., Deng, J., Ou, J. Z., Walia, S., Scott, J., Tang, J., Wang, K. L., Field, M. R., Russo, S., Zhuiykov, S., et al. (2013) · Advanced Materials · doi:10.1002/adma.201203346 · Cited by 406
Li, H., Li, Y., Aljarb, A., Shi, Y., & Li, L.-J. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00212 · Cited by 382
Zhang, X., Sun, D., Li, Y., Lee, G.-H., Cui, X., Chenet, D., You, Y., Heinz, T. F., & Hone, J. C. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b08580 · Cited by 369
Electronic Transport in Two-Dimensional Materials
Sangwan, V. K., & Hersam, M. C. (2018) · Annual Review of Physical Chemistry · doi:10.1146/annurev-physchem-050317-021353 · Cited by 336
Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
Ghorbani-Asl, M., Borini, S., Kuc, A., & Heine, T. (2013) · Physical Review B · doi:10.1103/physrevb.87.235434 · Cited by 313
Zhang, X., Zhao, X., Wu, D., Jing, Y., & Zhou, Z. (2015) · Nanoscale · doi:10.1039/c5nr04717j · Cited by 290
Chen, P., Li, N., Chen, X., Ong, W.-J., & Zhao, X. (2017) · 2D Materials · doi:10.1088/2053-1583/aa8d37 · Cited by 283
Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F., & Lanza, M. (2020) · Advanced Functional Materials · doi:10.1002/adfm.201900657 · Cited by 268
Metadata
- Authors
- Yoon, Y., Ganapathi, K., & Salahuddin, S.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-08-02
- Volume
- 11
- Issue
- 9
- Pages
- 3768-3773
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2066083252
- Cited by
- 1,528
- References
- 19
- FWCI
- 39.66
- Type
- journal article
- Language
- en
- Open access
- closed
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