The DOI matches its Crossref record; 28 of the 28 references it cites were found in a registry or an index.
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
Abstract
Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO(1-x) and ZnO.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Szot, K., Speier, W., Bihlmayer, G., & Waser, R. (2006) · Nature Materials · doi:10.1038/nmat1614 · Cited by 1,651
Observation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications · doi:10.1038/ncomms1737 · Cited by 1,208
Reproducible resistance switching in polycrystalline NiO films
Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., et al. (2004) · Applied Physics Letters · doi:10.1063/1.1831560 · Cited by 933
Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Overview of candidate device technologies for storage-class memory
Burr, G. W., Kurdi, B. N., Scott, J. C., Lam, C. H., Gopalakrishnan, K., & Shenoy, R. S. (2008) · IBM Journal of Research and Development · doi:10.1147/rd.524.0449 · Cited by 687
High-Density Crossbar Arrays Based on a Si Memristive System
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl8037689 · Cited by 574
Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change Memory
Janousch, M., Meijer, G. I., Staub, U., Delley, B., Karg, S. F., & Andreasson, B. P. (2007) · Advanced Materials · doi:10.1002/adma.200602915 · Cited by 530
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
Chang, W.-Y., Lai, Y.-C., Wu, T.-B., Wang, S.-F., Chen, F., & Tsai, M.-J. (2008) · Applied Physics Letters · doi:10.1063/1.2834852 · Cited by 465
Random Circuit Breaker Network Model for Unipolar Resistance Switching
Chae, S. C., Lee, J. S., Kim, S., Lee, S. B., Chang, S. H., Liu, C., Kahng, B., Shin, H., Kim, D., Jung, C. U., et al. (2008) · Advanced Materials · doi:10.1002/adma.200702024 · Cited by 349
Resistive Switches and Memories from Silicon Oxide
Yao, J., Sun, Z., Zhong, L., Natelson, D., & Tour, J. M. (2010) · Nano Letters · doi:10.1021/nl102255r · Cited by 338
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
Yu, S., & Wong, H.-S. P. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2078794 · Cited by 204
In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte Memory
Choi, S., Park, G., Kim, K., Cho, S., Yang, W., Li, X., Moon, J., Lee, K., & Kim, K. (2011) · Advanced Materials · doi:10.1002/adma.201100507 · Cited by 188
Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures
Dong, R., Lee, D. S., Xiang, W. F., Oh, S. J., Seong, D. J., Heo, S. H., Choi, H. J., Kwon, M. J., Seo, S. N., Pyun, M. B., et al. (2007) · Applied Physics Letters · doi:10.1063/1.2436720 · Cited by 185
Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices
Lin, Y.-C., Lu, K.-C., Wu, W.-W., Bai, J., Chen, L. J., Tu, K. N., & Huang, Y. (2008) · Nano Letters · doi:10.1021/nl073279r · Cited by 174
Self-citationDirect Observation of Ag Filamentary Paths in Organic Resistive Memory Devices
Cho, B., Yun, J., Song, S., Ji, Y., Kim, D., & Lee, T. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201101210 · Cited by 164
High density 3D memory architecture based on the resistive switching effect
Kügeler, C., Meier, M., Rosezin, R., Gilles, S., & Waser, R. (2009) · Solid-State Electronics · doi:10.1016/j.sse.2009.09.034 · Cited by 158
Huang, C., Huang, J., Lin, S.-M., Chang, W.-Y., He, J., & Chueh, Y. (2012) · ACS Nano · doi:10.1021/nn303233r · Cited by 151
Self-citationMetal oxide memories based on thermochemical and valence change mechanisms
Yang, J. J., Inoue, I. H., Mikolajick, T., & Hwang, C. S. (2012) · MRS Bulletin · doi:10.1557/mrs.2011.356 · Cited by 123
Electrochemical metallization cells—blending nanoionics into nanoelectronics?
Lu, W., Jeong, D. S., Kozicki, M., & Waser, R. (2012) · MRS Bulletin · doi:10.1557/mrs.2012.5 · Cited by 113
Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data Storage
Song, J., Zhang, Y., Xu, C. G., Wu, W., & Wang, Z. L. (2011) · Nano Letters · doi:10.1021/nl2011966 · Cited by 109
Self-citationHuang, Y.-T., Yu, S.-Y., Hsin, C., Huang, C., Kang, C., Chu, F.-H., Chen, J.-Y., Hu, J.-C., Chen, L.-T., He, J., et al. (2013) · Analytical Chemistry · doi:10.1021/ac303528m · Cited by 45
Self-citationGrowth of CuInSe2 and In2Se3/CuInSe2 Nano-Heterostructures through Solid State Reactions
Hsin, C., Lee, W.-F., Huang, C.-T., Huang, C., Wu, W., & Chen, L. (2011) · Nano Letters · doi:10.1021/nl202463w · Cited by 44
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Self-citationBrain-inspired computing with memristors: Challenges in devices, circuits, and systems
Zhang, Y., Wang, Z., Zhu, J., Yang, Y., Rao, M., Song, W., Zhuo, Y., Zhang, X., Cui, M., Shen, L., et al. (2020) · Applied Physics Reviews · doi:10.1063/1.5124027 · Cited by 384
Nanoscale resistive switching devices: mechanisms and modeling
Yang, Y., & Lu, W. (2013) · Nanoscale · doi:10.1039/c3nr03472k · Cited by 270
Status and prospects of ZnO-based resistive switching memory devices
Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1570-y · Cited by 244
Metadata
- Authors
- Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., Wu, W.-W., & Chen, L.-J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-07-19
- Volume
- 13
- Issue
- 8
- Pages
- 3671-3677
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1981080265
- Cited by
- 388
- References
- 28
- FWCI
- 19.77
- Type
- journal article
- Language
- en
- Open access
- closed
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