Atomically thin p–n junctions based on two-dimensional materials

Electric Field Effect in Atomically Thin Carbon Films

Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586

Single-layer MoS2 transistors

Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939

Two-dimensional atomic crystals

Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788

Van der Waals heterostructures

Geim, A. K., & Grigorieva, I. V. (2013) · Nature · doi:10.1038/nature12385 · Cited by 10,875

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034

Emerging Photoluminescence in Monolayer MoS2

Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501

2D metal carbides and nitrides (MXenes) for energy storage

Anasori, B., Lukatskaya, M. R., & Gogotsi, Y. (2017) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.98 · Cited by 7,440

2D materials and van der Waals heterostructures

Novoselov, K. S., Mishchenko, A., Carvalho, A., & Castro Neto, A. H. (2016) · Science · doi:10.1126/science.aac9439 · Cited by 7,434

Boron nitride substrates for high-quality graphene electronics

Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124

Statistics of the Recombinations of Holes and Electrons

Shockley, W., & Read, W. T. (1952) · Physical Review · doi:10.1103/physrev.87.835 · Cited by 6,589

2D transition metal dichalcogenides

Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., & Kis, A. (2017) · Nature Reviews Materials · doi:10.1038/natrevmats.2017.33 · Cited by 6,075

Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

Huang, B., Clark, G., Navarro-Moratalla, E., Klein, D. R., Cheng, R., Seyler, K. L., Zhong, D., Schmidgall, E., McGuire, M. A., Cobden, D. H., et al. (2017) · Nature · doi:10.1038/nature22391 · Cited by 5,926

Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

Zhao, L.-D., Lo, S.-H., Zhang, Y., Sun, H., Tan, G., Uher, C., Wolverton, C., Dravid, V. P., & Kanatzidis, M. G. (2014) · Nature · doi:10.1038/nature13184 · Cited by 5,218

Energy Band-Gap Engineering of Graphene Nanoribbons

Han, M. Y., Özyilmaz, B., Zhang, Y., & Kim, P. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.206805 · Cited by 5,207

Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

Elias, D. C., Nair, R. R., Mohiuddin, T. M. G., Morozov, S. V., Blake, P., Halsall, M. P., Ferrari, A. C., Boukhvalov, D. W., Katsnelson, M. I., Geim, A. K., et al. (2009) · Science · doi:10.1126/science.1167130 · Cited by 4,163

Liquid Exfoliation of Layered Materials

Nicolosi, V., Chhowalla, M., Kanatzidis, M. G., Strano, M. S., & Coleman, J. N. (2013) · Science · doi:10.1126/science.1226419 · Cited by 3,796

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

Xia, F., Wang, H., & Jia, Y. (2014) · Nature Communications · doi:10.1038/ncomms5458 · Cited by 3,516

Electronics based on two-dimensional materials

Fiori, G., Bonaccorso, F., Iannaccone, G., Palacios, T., Neumaier, D., Seabaugh, A., Banerjee, S. K., & Colombo, L. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.207 · Cited by 3,176

One-Dimensional Electrical Contact to a Two-Dimensional Material

Wang, L., Meric, I., Huang, P. Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L. M., Muller, D. A., et al. (2013) · Science · doi:10.1126/science.1244358 · Cited by 3,042

Two-dimensional material nanophotonics

Xia, F., Wang, H., Xiao, D., Dubey, M., & Ramasubramaniam, A. (2014) · Nature Photonics · doi:10.1038/nphoton.2014.271 · Cited by 3,034

Van der Waals heterostructures and devices

Liu, Y., Weiss, N. O., Duan, X., Cheng, H.-C., Huang, Y., & Duan, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.42 · Cited by 2,793

Electron-Hole Recombination in Germanium

Hall, R. N. (1952) · Physical Review · doi:10.1103/physrev.87.387 · Cited by 2,776

Recent development of two-dimensional transition metal dichalcogenides and their applications

Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

Tran, V., Soklaski, R., Liang, Y., & Yang, L. (2014) · Physical Review B · doi:10.1103/physrevb.89.235319 · Cited by 2,337

Vertical and in-plane heterostructures from WS2/MoS2 monolayers

Gong, Y., Lin, J., Wang, X., Shi, G., Lei, S., Lin, Z., Zou, X., Ye, G., Vajtai, R., Yakobson, B. I., et al. (2014) · Nature Materials · doi:10.1038/nmat4091 · Cited by 2,323

Atomically thin p–n junctions with van der Waals heterointerfaces

Lee, C.-H., Lee, G.-H., van der Zande, A. M., Chen, W., Li, Y., Han, M., Cui, X., Arefe, G., Nuckolls, C., Heinz, T. F., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.150 · Cited by 2,303

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures

Hong, X., Kim, J., Shi, S.-F., Zhang, Y., Jin, C., Sun, Y., Tongay, S., Wu, J., Zhang, Y., & Wang, F. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.167 · Cited by 2,301

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

Castellanos-Gomez, A., Buscema, M., Molenaar, R., Singh, V., Janssen, L., van der Zant, H. S. J., & Steele, G. A. (2014) · 2D Materials · doi:10.1088/2053-1583/1/1/011002 · Cited by 1,970

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

Kang, K., Xie, S., Huang, L., Han, Y., Huang, P. Y., Mak, K. F., Kim, C.-J., Muller, D., & Park, J. (2015) · Nature · doi:10.1038/nature14417 · Cited by 1,961

Two-dimensional flexible nanoelectronics

Akinwande, D., Petrone, N., & Hone, J. (2014) · Nature Communications · doi:10.1038/ncomms6678 · Cited by 1,910

Making graphene visible

Blake, P., Hill, E. W., Castro Neto, A. H., Novoselov, K. S., Jiang, D., Yang, R., Booth, T. J., & Geim, A. K. (2007) · Applied Physics Letters · doi:10.1063/1.2768624 · Cited by 1,794

Band offsets and heterostructures of two-dimensional semiconductors

Kang, J., Tongay, S., Zhou, J., Li, J., & Wu, J. (2013) · Applied Physics Letters · doi:10.1063/1.4774090 · Cited by 1,708

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

Ross, J. S., Klement, P., Jones, A. M., Ghimire, N. J., Yan, J., Mandrus, D. G., Taniguchi, T., Watanabe, K., Kitamura, K., Yao, W., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.26 · Cited by 1,690

Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2and WSe2Nanosheets

Li, H., Wu, J., Yin, Z., & Zhang, H. (2014) · Accounts of Chemical Research · doi:10.1021/ar4002312 · Cited by 1,668

Isolation and characterization of few-layer black phosphorus

Castellanos-Gomez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · 2D Materials · doi:10.1088/2053-1583/1/2/025001 · Cited by 1,621

Mixed-dimensional van der Waals heterostructures

Jariwala, D., Marks, T. J., & Hersam, M. C. (2017) · Nature Materials · doi:10.1038/nmat4703 · Cited by 1,606

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.25 · Cited by 1,523

Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping

Mouri, S., Miyauchi, Y., & Matsuda, K. (2013) · Nano Letters · doi:10.1021/nl403036h · Cited by 1,517

Bandgap opening in graphene induced by patterned hydrogen adsorption

Balog, R., Jørgensen, B., Nilsson, L., Andersen, M., Rienks, E., Bianchi, M., Fanetti, M., Lægsgaard, E., Baraldi, A., Lizzit, S., et al. (2010) · Nature Materials · doi:10.1038/nmat2710 · Cited by 1,502

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Wood, J. D., Wells, S. A., Jariwala, D., Chen, K.-S., Cho, E., Sangwan, V. K., Liu, X., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · Nano Letters · doi:10.1021/nl5032293 · Cited by 1,491

An atlas of two-dimensional materials

Miró, P., Audiffred, M., & Heine, T. (2014) · Chem. Soc. Rev. · doi:10.1039/c4cs00102h · Cited by 1,475

Solar-energy conversion and light emission in an atomic monolayer p–n diode

Pospischil, A., Furchi, M. M., & Mueller, T. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.14 · Cited by 1,418

Photooxidation and quantum confinement effects in exfoliated black phosphorus

Favron, A., Gaufrès, E., Fossard, F., Phaneuf-L’Heureux, A.-L., Tang, N. Y.-W., Lévesque, P. L., Loiseau, A., Leonelli, R., Francoeur, S., & Martel, R. (2015) · Nature Materials · doi:10.1038/nmat4299 · Cited by 1,376

Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

Yuan, H., Liu, X., Afshinmanesh, F., Li, W., Xu, G., Sun, J., Lian, B., Curto, A. G., Ye, G., Hikita, Y., et al. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.112 · Cited by 1,353

Monolayer MoS2 Heterojunction Solar Cells

Tsai, M.-L., Su, S.-H., Chang, J.-K., Tsai, D.-S., Chen, C.-H., Wu, C.-I., Li, L.-J., Chen, L.-J., & He, J.-H. (2014) · ACS Nano · doi:10.1021/nn502776h · Cited by 1,262

Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

Deng, Y., Luo, Z., Conrad, N. J., Liu, H., Gong, Y., Najmaei, S., Ajayan, P. M., Lou, J., Xu, X., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn5027388 · Cited by 1,246

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

Duan, X., Wang, C., Shaw, J. C., Cheng, R., Chen, Y., Li, H., Wu, X., Tang, Y., Zhang, Q., Pan, A., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.222 · Cited by 1,241

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

Xia, F., Farmer, D. B., Lin, Y.-M., & Avouris, P. (2010) · Nano Letters · doi:10.1021/nl9039636 · Cited by 1,237

Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface

Li, M.-Y., Shi, Y., Cheng, C.-C., Lu, L.-S., Lin, Y.-C., Tang, H.-L., Tsai, M.-L., Chu, C.-W., Wei, K.-H., He, J.-H., et al. (2015) · Science · doi:10.1126/science.aab4097 · Cited by 1,203

Graphene Thickness Determination Using Reflection and Contrast Spectroscopy

Ni, Z. H., Wang, H. M., Kasim, J., Fan, H. M., Yu, T., Wu, Y. H., Feng, Y. P., & Shen, Z. X. (2007) · Nano Letters · doi:10.1021/nl071254m · Cited by 1,181

Isolation and characterization of few-layer black phosphorus

Castellanos-Gómez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Científicas) · Cited by 1,171

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

Duan, X., Wang, C., Pan, A., Yu, R., & Duan, X. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00507h · Cited by 1,161

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Fang, H., Battaglia, C., Carraro, C., Nemsak, S., Ozdol, B., Kang, J. S., Bechtel, H. A., Desai, S. B., Kronast, F., Unal, A. A., et al. (2014) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1405435111 · Cited by 1,142

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

Cheng, R., Li, D., Zhou, H., Wang, C., Yin, A., Jiang, S., Liu, Y., Chen, Y., Huang, Y., & Duan, X. (2014) · Nano Letters · doi:10.1021/nl502075n · Cited by 1,115

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

Furchi, M. M., Pospischil, A., Libisch, F., Burgdörfer, J., & Mueller, T. (2014) · Nano Letters · doi:10.1021/nl501962c · Cited by 1,085

Hot Carrier–Assisted Intrinsic Photoresponse in Graphene

Gabor, N. M., Song, J. C. W., Ma, Q., Nair, N. L., Taychatanapat, T., Watanabe, K., Taniguchi, T., Levitov, L. S., & Jarillo-Herrero, P. (2011) · Science · doi:10.1126/science.1211384 · Cited by 1,076

Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

Huang, C., Wu, S., Sanchez, A. M., Peters, J. J. P., Beanland, R., Ross, J. S., Rivera, P., Yao, W., Cobden, D. H., & Xu, X. (2014) · Nature Materials · doi:10.1038/nmat4064 · Cited by 1,017

Electroluminescence in Single Layer MoS2

Sundaram, R. S., Engel, M., Lombardo, A., Krupke, R., Ferrari, A. C., Avouris, P., & Steiner, M. (2013) · Nano Letters · doi:10.1021/nl400516a · Cited by 1,007

From graphene to graphite: Electronic structure around theKpoint

Partoens, B., & Peeters, F. M. (2006) · Physical Review B · doi:10.1103/physrevb.74.075404 · Cited by 993

A subthermionic tunnel field-effect transistor with an atomically thin channel

Sarkar, D., Xie, X., Liu, W., Cao, W., Kang, J., Gong, Y., Kraemer, S., Ajayan, P. M., & Banerjee, K. (2015) · Nature · doi:10.1038/nature15387 · Cited by 972

Environmental instability of few-layer black phosphorus

Island, J. O., Steele, G. A., Zant, H. S. J. V. D., & Castellanos-Gomez, A. (2015) · 2D Materials · doi:10.1088/2053-1583/2/1/011002 · Cited by 954

Elemental Analogues of Graphene: Silicene, Germanene, Stanene, and Phosphorene

Balendhran, S., Walia, S., Nili, H., Sriram, S., & Bhaskaran, M. (2015) · Small · doi:10.1002/smll.201402041 · Cited by 903

Advances in 2D boron nitride nanostructures: nanosheets, nanoribbons, nanomeshes, and hybrids with graphene

Lin, Y., & Connell, J. W. (2012) · Nanoscale · doi:10.1039/c2nr32201c · Cited by 902

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

Cai, Y., Zhang, G., & Zhang, Y.-W. (2014) · Scientific Reports · doi:10.1038/srep06677 · Cited by 894

Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry

Ryder, C. R., Wood, J. D., Wells, S. A., Yang, Y., Jariwala, D., Marks, T. J., Schatz, G. C., & Hersam, M. C. (2016) · Nature Chemistry · doi:10.1038/nchem.2505 · Cited by 822

Ambipolar MoS2 Thin Flake Transistors

Zhang, Y., Ye, J., Matsuhashi, Y., & Iwasa, Y. (2012) · Nano Letters · doi:10.1021/nl2021575 · Cited by 818

Buckled two-dimensional Xene sheets

Molle, A., Goldberger, J., Houssa, M., Xu, Y., Zhang, S.-C., & Akinwande, D. (2017) · Nature Materials · doi:10.1038/nmat4802 · Cited by 813

Electrically Switchable Chiral Light-Emitting Transistor

Zhang, Y. J., Oka, T., Suzuki, R., Ye, J. T., & Iwasa, Y. (2014) · Science · doi:10.1126/science.1251329 · Cited by 773

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

Buscema, M., Groenendijk, D. J., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2014) · Nature Communications · doi:10.1038/ncomms5651 · Cited by 756

Photovoltaic effect in an electrically tunable van der Waals heterojunction

Furchi, M. M., Pospischil, A., Libisch, F., & Mueller, T. (2014) · Cited by 723

Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

Suh, J., Park, T.-E., Lin, D.-Y., Fu, D., Park, J., Jung, H. J., Chen, Y., Ko, C., Jang, C., Sun, Y., et al. (2014) · Nano Letters · doi:10.1021/nl503251h · Cited by 694

Orbitally driven giant phonon anharmonicity in SnSe

Li, C. W., Hong, J., May, A. F., Bansal, D., Chi, S., Hong, T., Ehlers, G., & Delaire, O. (2015) · Nature Physics · doi:10.1038/nphys3492 · Cited by 692

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

Liu, Y., Stradins, P., & Wei, S.-H. (2016) · Science Advances · doi:10.1126/sciadv.1600069 · Cited by 692

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors

Wang, L., Jie, J., Shao, Z., Zhang, Q., Zhang, X., Wang, Y., Sun, Z., & Lee, S. (2015) · Advanced Functional Materials · doi:10.1002/adfm.201500216 · Cited by 684

Mechanisms of Photoconductivity in Atomically Thin MoS2

Furchi, M. M., Polyushkin, D. K., Pospischil, A., & Mueller, T. (2014) · Nano Letters · doi:10.1021/nl502339q · Cited by 673

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

Das, S., Robinson, J. A., Dubey, M., Terrones, H., & Terrones, M. (2015) · Annual Review of Materials Research · doi:10.1146/annurev-matsci-070214-021034 · Cited by 640

Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy

Mak, K. F., Lui, C. H., Shan, J., & Heinz, T. F. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.256405 · Cited by 638

Heterostructures based on two-dimensional layered materials and their potential applications

Li, M.-Y., Chen, C.-H., Shi, Y., & Li, L.-J. (2016) · Materials Today · doi:10.1016/j.mattod.2015.11.003 · Cited by 633

Exfoliated oxide nanosheets: new solution to nanoelectronics

Osada, M., & Sasaki, T. (2009) · Journal of Materials Chemistry · doi:10.1039/b820160a · Cited by 608

Liquid-gated interface superconductivity on an atomically flat film

Ye, J. T., Inoue, S., Kobayashi, K., Kasahara, Y., Yuan, H. T., Shimotani, H., & Iwasa, Y. (2010) · Nature Materials · doi:10.1038/nmat2587 · Cited by 592

Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

Choi, M. S., Qu, D., Lee, D., Liu, X., Watanabe, K., Taniguchi, T., & Yoo, W. J. (2014) · ACS Nano · doi:10.1021/nn503284n · Cited by 588

Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor

Xia, F., Mueller, T., Golizadeh-Mojarad, R., Freitag, M., Lin, Y.-M., Tsang, J., Perebeinos, V., & Avouris, P. (2009) · Nano Letters · doi:10.1021/nl8033812 · Cited by 578

Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction

Ye, L., Li, H., Chen, Z., & Xu, J. (2016) · ACS Photonics · doi:10.1021/acsphotonics.6b00079 · Cited by 568

Two-Step Growth of Two-Dimensional WSe2/MoSe2 Heterostructures

Gong, Y., Lei, S., Ye, G., Li, B., He, Y., Keyshar, K., Zhang, X., Wang, Q., Lou, J., Liu, Z., et al. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b02423 · Cited by 568

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures

Zhang, K., Zhang, T., Cheng, G., Li, T., Wang, S., Wei, W., Zhou, X., Yu, W., Sun, Y., Wang, P., et al. (2016) · ACS Nano · doi:10.1021/acsnano.6b00980 · Cited by 562

Interaction of Black Phosphorus with Oxygen and Water

Huang, Y., Qiao, J., He, K., Bliznakov, S., Sutter, E., Chen, X., Luo, D., Meng, F., Su, D., Decker, J., et al. (2016) · Chemistry of Materials · doi:10.1021/acs.chemmater.6b03592 · Cited by 532

Two-Dimensional Oxide and Hydroxide Nanosheets: Controllable High-Quality Exfoliation, Molecular Assembly, and Exploration of Functionality

Ma, R., & Sasaki, T. (2015) · Accounts of Chemical Research · doi:10.1021/ar500311w · Cited by 523

Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

Doganov, R. A., O’Farrell, E. C. T., Koenig, S. P., Yeo, Y., Ziletti, A., Carvalho, A., Campbell, D. K., Coker, D. F., Watanabe, K., Taniguchi, T., et al. (2015) · Nature Communications · doi:10.1038/ncomms7647 · Cited by 521

Black Phosphorus Rediscovered: From Bulk Material to Monolayers

Gusmão, R., Sofer, Z., & Pumera, M. (2017) · Angewandte Chemie International Edition · doi:10.1002/anie.201610512 · Cited by 521

Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

Avsar, A., Vera-Marun, I. J., Tan, J. Y., Watanabe, K., Taniguchi, T., Castro Neto, A. H., & Özyilmaz, B. (2015) · ACS Nano · doi:10.1021/acsnano.5b00289 · Cited by 497

Crystal and Magnetic Structures in Layered, Transition Metal Dihalides and Trihalides

McGuire, M. A. (2017) · Crystals · doi:10.3390/cryst7050121 · Cited by 484

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Yang, T., Zheng, B., Wang, Z., Xu, T., Pan, C., Zou, J., Zhang, X., Qi, Z., Liu, H., Feng, Y., et al. (2017) · Nature Communications · doi:10.1038/s41467-017-02093-z · Cited by 476

Mono- and Bilayer WS2 Light-Emitting Transistors

Jo, S., Ubrig, N., Berger, H., Kuzmenko, A. B., & Morpurgo, A. F. (2014) · Nano Letters · doi:10.1021/nl500171v · Cited by 475

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

Cao, Y., Mishchenko, A., Yu, G. L., Khestanova, E., Rooney, A. P., Prestat, E., Kretinin, A. V., Blake, P., Shalom, M. B., Woods, C., et al. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00648 · Cited by 455

Novel and Enhanced Optoelectronic Performances of Multilayer MoS2–WS2 Heterostructure Transistors

Huo, N., Kang, J., Wei, Z., Li, S., Li, J., & Wei, S. (2014) · Advanced Functional Materials · doi:10.1002/adfm.201401504 · Cited by 453

Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode

Jariwala, D., Sangwan, V. K., Wu, C.-C., Prabhumirashi, P. L., Geier, M. L., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1317226110 · Cited by 436

Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials

Kim, S. J., Choi, K., Lee, B., Kim, Y., & Hong, B. H. (2015) · Annual Review of Materials Research · doi:10.1146/annurev-matsci-070214-020901 · Cited by 433

Light Generation and Harvesting in a van der Waals Heterostructure

Lopez-Sanchez, O., Alarcon Llado, E., Koman, V., Fontcuberta i Morral, A., Radenovic, A., & Kis, A. (2014) · ACS Nano · doi:10.1021/nn500480u · Cited by 431

Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors

Island, J. O., Blanter, S. I., Buscema, M., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b02523 · Cited by 430

Gate-Activated Photoresponse in a Graphene p–n Junction

Lemme, M. C., Koppens, F. H. L., Falk, A. L., Rudner, M. S., Park, H., Levitov, L. S., & Marcus, C. M. (2011) · Nano Letters · doi:10.1021/nl2019068 · Cited by 423

Toward air-stable multilayer phosphorene thin-films and transistors

Kim, J.-S., Liu, Y., Zhu, W., Kim, S., Wu, D., Tao, L., Dodabalapur, A., Lai, K., & Akinwande, D. (2015) · Scientific Reports · doi:10.1038/srep08989 · Cited by 408

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

Nipane, A., Karmakar, D., Kaushik, N., Karande, S., & Lodha, S. (2016) · ACS Nano · doi:10.1021/acsnano.5b06529 · Cited by 398

Two-dimensional non-volatile programmable p–n junctions

Li, D., Chen, M., Sun, Z., Yu, P., Liu, Z., Ajayan, P. M., & Zhang, Z. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.104 · Cited by 390

Multifunctional high-performance van der Waals heterostructures

Huang, M., Li, S., Zhang, Z., Xiong, X., Li, X., & Wu, Y. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.208 · Cited by 389

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

Zomer, P. J., Dash, S. P., Tombros, N., & van Wees, B. J. (2011) · Applied Physics Letters · doi:10.1063/1.3665405 · Cited by 383

Optical tuning of exciton and trion emissions in monolayer phosphorene

Yang, J., Xu, R., Pei, J., Myint, Y. W., Wang, F., Wang, Z., Zhang, S., Yu, Z., & Lu, Y. (2015) · Light: Science & Applications · doi:10.1038/lsa.2015.85 · Cited by 363

Two-dimensional crystals-based heterostructures: materials with tailored properties

Novoselov, K. S., & Castro Neto, A. H. (2012) · Physica Scripta · doi:10.1088/0031-8949/2012/t146/014006 · Cited by 354

Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

Li, H.-M., Lee, D., Qu, D., Liu, X., Ryu, J., Seabaugh, A., & Yoo, W. J. (2015) · Nature Communications · doi:10.1038/ncomms7564 · Cited by 353

Why all the fuss about 2D semiconductors?

Castellanos-Gomez, A. (2016) · Nature Photonics · doi:10.1038/nphoton.2016.53 · Cited by 327

Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction

Pezeshki, A., Shokouh, S. H. H., Nazari, T., Oh, K., & Im, S. (2016) · Advanced Materials · doi:10.1002/adma.201504090 · Cited by 292

Synthesis of high quality two-dimensional materials via chemical vapor deposition

Yu, J., Li, J., Zhang, W., & Chang, H. (2015) · Chemical Science · doi:10.1039/c5sc01941a · Cited by 289

The Optical Visibility of Graphene: Interference Colors of Ultrathin Graphite on SiO2

Roddaro, S., Pingue, P., Piazza, V., Pellegrini, V., & Beltram, F. (2007) · Nano Letters · doi:10.1021/nl071158l · Cited by 276

Photovoltaic and Photothermoelectric Effect in a Double-Gated WSe2Device

Groenendijk, D. J., Buscema, M., Steele, G. A., Michaelis de Vasconcellos, S., Bratschitsch, R., van der Zant, H. S. J., & Castellanos-Gomez, A. (2014) · Nano Letters · doi:10.1021/nl502741k · Cited by 273

Electron-Doping-Enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate

Lin, J. D., Han, C., Wang, F., Wang, R., Xiang, D., Qin, S., Zhang, X.-A., Wang, L., Zhang, H., Wee, A. T. S., et al. (2014) · ACS Nano · doi:10.1021/nn501580c · Cited by 249

A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe 2

Jin, Y., Keum, D. H., An, S. J., Kim, J., Lee, H. S., & Lee, Y. H. (2015) · Advanced Materials · doi:10.1002/adma.201502278 · Cited by 245

High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures

Wong, J., Jariwala, D., Tagliabue, G., Tat, K., Davoyan, A. R., Sherrott, M. C., & Atwater, H. A. (2017) · ACS Nano · doi:10.1021/acsnano.7b03148 · Cited by 238

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures

Yan, F., Zhao, L., Patanè, A., Hu, P., Wei, X., Luo, W., Zhang, D., Lv, Q., Feng, Q., Shen, C., et al. (2017) · Nanotechnology · doi:10.1088/1361-6528/aa749e · Cited by 235

MoS 2 and semiconductors in the flatland

Yazyev, O. V., & Kis, A. (2015) · Materials Today · doi:10.1016/j.mattod.2014.07.005 · Cited by 225

Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

Zhang, Y. J., Ye, J. T., Yomogida, Y., Takenobu, T., & Iwasa, Y. (2013) · Nano Letters · doi:10.1021/nl400902v · Cited by 223

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Island, J. O., Molina-Mendoza, A. J., Barawi, M., Biele, R., Flores, E., Clamagirand, J. M., Ares, J. R., Sánchez, C., van der Zant, H. S. J., D’Agosta, R., et al. (2017) · 2D Materials · doi:10.1088/2053-1583/aa6ca6 · Cited by 211

Colors Of Graphite On Silicon DioxidePreprint

Roddaro, S., Pingue, P., Piazza, V., et al. (2007) · arXiv (Cornell University) · doi:10.48550/arxiv.0705.0492 · Cited by 192

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

Dhyani, V., & Das, S. (2017) · Scientific Reports · doi:10.1038/srep44243 · Cited by 171

Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide

Li, D., Cheng, R., Zhou, H., Wang, C., Yin, A., Chen, Y., Weiss, N. O., Huang, Y., & Duan, X. (2015) · Nature Communications · doi:10.1038/ncomms8509 · Cited by 164

Investigation of Band-Offsets at Monolayer–Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Howell, S. L., Jariwala, D., Wu, C.-C., Chen, K.-S., Sangwan, V. K., Kang, J., Marks, T. J., Hersam, M. C., & Lauhon, L. J. (2015) · Nano Letters · doi:10.1021/nl504311p · Cited by 163

A flexible p-CuO/n-MoS2 heterojunction photodetector with enhanced photoresponse by the piezo-phototronic effect

Zhang, K., Peng, M., Wu, W., Guo, J., Gao, G., Liu, Y., Kou, J., Wen, R., Lei, Y., Yu, A., et al. (2017) · Materials Horizons · doi:10.1039/c6mh00568c · Cited by 159

Theory of 2D crystals: graphene and beyond

Roldán, R., Chirolli, L., Prada, E., Silva-Guillén, J. Á., San-José, P., & Guinea, F. (2017) · Chemical Society Reviews · doi:10.1039/c7cs00210f · Cited by 159

Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering

Chiu, H.-Y., Perebeinos, V., Lin, Y.-M., & Avouris, P. (2010) · Nano Letters · doi:10.1021/nl102756r · Cited by 158

A WSe2/MoSe2 heterostructure photovoltaic device

Flöry, N., Jain, A., Bharadwaj, P., Parzefall, M., Taniguchi, T., Watanabe, K., & Novotný, L. (2015) · Applied Physics Letters · doi:10.1063/1.4931621 · Cited by 153

Single Atomically Sharp Lateral Monolayer p‐n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

Tsai, M., Li, M., Retamal, J. R. D., Lam, K., Lin, Y., Suenaga, K., Chen, L., Liang, G., Li, L., & He, J. (2017) · Advanced Materials · doi:10.1002/adma.201701168 · Cited by 138

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction

Kim, E., Ko, C., Kim, K., Chen, Y., Suh, J., Ryu, S., Wu, K., Meng, X., Süslü, A., Tongay, S., et al. (2015) · Advanced Materials · doi:10.1002/adma.201503945 · Cited by 137

Gate dependent photocurrents at a graphene p-n junction

Peters, E. C., Lee, E. J. H., Burghard, M., & Kern, K. (2010) · Applied Physics Letters · doi:10.1063/1.3505926 · Cited by 136

Fundamentals of lateral and vertical heterojunctions of atomically thin materials

Pant, A., Mutlu, Z., Wickramaratne, D., Cai, H., Lake, R. K., Ozkan, C. S., & Tongay, S. (2016) · Nanoscale · doi:10.1039/c5nr08982d · Cited by 132

Behavior of a chemically doped graphene junction

Farmer, D. B., Lin, Y.-M., Afzali-Ardakani, A., & Avouris, P. (2009) · Applied Physics Letters · doi:10.1063/1.3142865 · Cited by 124

MoS2 Heterojunctions by Thickness Modulation

Tosun, M., Fu, D., Desai, S. B., Ko, C., Kang, J. S., Lien, D., Najmzadeh, M., Tongay, S., Wu, J., & Javey, A. (2015) · Scientific Reports · doi:10.1038/srep10990 · Cited by 115

Tuning a circular p–n junction in graphene from quantum confinement to optical guiding

Jiang, Y., Mao, J., Moldovan, D., Masir, M. R., Li, G., Watanabe, K., Taniguchi, T., Peeters, F. M., & Andrei, E. Y. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.181 · Cited by 112

A van der Waals pn heterojunction with organic/inorganic semiconductors

He, D., Pan, Y., Nan, H., Gu, S., Yang, Z., Wu, B., Luo, X., Xu, B., Zhang, Y., Li, Y., et al. (2015) · Applied Physics Letters · doi:10.1063/1.4935028 · Cited by 104

Gate-tunable diode and photovoltaic effect in an organic–2D layered material p–n junction

Vélez, S., Ciudad, D., Island, J. O., Buscema, M., Txoperena, O., Parui, S., Steele, G. A., Casanova, F., van der Zant, H. S. J., Castellanos-Gómez, A., et al. (2015) · Nanoscale · doi:10.1039/c5nr04083c · Cited by 101

Atomically thin lateral p–n junction photodetector with large effective detection area

Xu, Z., Zhang, Y., Wang, Z., Shen, Y., Huang, W., Xia, X., Yu, W., Xue, Y., Sun, L., Zheng, C., et al. (2016) · 2D Materials · doi:10.1088/2053-1583/3/4/041001 · Cited by 99

Mie scattering analog in graphene: Lensing, particle confinement, and depletion of Klein tunneling

Heinisch, R. L., Bronold, F. X., & Fehske, H. (2013) · Physical Review B · doi:10.1103/physrevb.87.155409 · Cited by 90

Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2

Ponomarev, E., Gutiérrez‐Lezama, I., Ubrig, N., & Morpurgo, A. F. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b03885 · Cited by 81

Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices

Wang, G., Bao, L., Pei, T., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02704 · Cited by 81

Chemical vapor deposition growth of two-dimensional heterojunctions

Cui, Y., Li, B., Li, J., & Wei, Z. (2017) · Science China Physics Mechanics and Astronomy · doi:10.1007/s11433-017-9105-x · Cited by 79

Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure

Cho, A.-J., Namgung, S. D., Kim, H., & Kwon, J. (2017) · APL Materials · doi:10.1063/1.4991028 · Cited by 77

Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides

Wong, S. L., Liu, H., & Chi, D. (2016) · Progress in Crystal Growth and Characterization of Materials · doi:10.1016/j.pcrysgrow.2016.06.002 · Cited by 76

Raman and Photocurrent Imaging of Electrical Stress-Induced p–n Junctions in Graphene

Rao, G., Freitag, M., Chiu, H., Sundaram, R. S., & Avouris, P. (2011) · ACS Nano · doi:10.1021/nn201611r · Cited by 69

Self-Assembly of the Lateral In2Se3/CuInSe2 Heterojunction for Enhanced Photodetection

Zheng, Z., Yao, J., & Yang, G. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b16323 · Cited by 68

Thin-layer black phosphorus/GaAs heterojunction p-n diodes

Gehring, P., Urcuyo, R., Duong⧫, D. L., Burghard, M., & Kern, K. (2015) · Applied Physics Letters · doi:10.1063/1.4922531 · Cited by 63

Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses

Yang, Y., Huo, N., & Li, J. (2017) · Journal of Materials Chemistry C · doi:10.1039/c7tc01806a · Cited by 55

Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates

Wang, Z., Li, M., Yang, L., Zhi-dong, Z., & Gao, X. (2016) · Nano Research · doi:10.1007/s12274-016-1369-2 · Cited by 53

Photoresponse of atomically thin MoS 2 layers and their planar heterojunctions

Kallatt, S., Umesh, G., Bhat, N., & Majumdar, K. (2016) · Nanoscale · doi:10.1039/c6nr02828d · Cited by 44

Engineering the optoelectronic properties of MoS 2 photodetectors through reversible noncovalent functionalization

Molina‐Mendoza, A. J., Vaquero-Garzon, L., Leret, S., de Juan-Fernández, L., Pérez, E. M., & Castellanos-Gómez, A. (2016) · Chemical Communications · doi:10.1039/c6cc07678e · Cited by 43

Spatiotemporal evolution of prehistoric Neolithic-Bronze Age settlements and influencing factors in the Guanting Basin, northeast Tibetan Plateau

Cui, Y., Liu, Y., & Ma, M. (2017) · Science China Earth Sciences · doi:10.1007/s11430-017-9138-8 · Cited by 25

Molybdenum Disulfide Nanoflake–Zinc Oxide Nanowire Hybrid Photoinverter

Shokouh, S. H. H., Pezeshki, A., Raza, S. R. A., Choi, K., Min, S., Jeon, P. J., Lee, K. H., & Im, S. (2014) · ACS Nano · doi:10.1021/nn501230v · Cited by 22