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Growth of epitaxial graphene: Theory and experiment
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A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of the most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.
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Cited by
Kumar, R., Sahoo, S., Joanni, E., Singh, R. K., Tan, W. K., Kar, K. K., & Matsuda, A. (2019) · Progress in Energy and Combustion Science · doi:10.1016/j.pecs.2019.100786 · Cited by 554
Metadata
- Authors
- Tetlow, H., Posthuma de Boer, J., Ford, I. J., Vvedensky, D. D., Coraux, J., & Kantorovich, L.
- Venue
- Physics Reports
- Publisher
- Elsevier BV
- Published
- 2014-09
- Volume
- 542
- Issue
- 3
- Pages
- 195-295
- ISSN
- 0370-1573 (ISSN-L)
- OpenAlex
- W2007262819
- Cited by
- 274
- References
- 249
- FWCI
- 11.61
- Type
- journal article
- Language
- en
- Open access
- green
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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