The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index; none of the 33 sources its claims cite is checked for support yet.
Stochastic memristive devices for computing and neuromorphic applications
Open accessAbstract
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially large variations in space and time in these nanoscale devices. Here we show that in metal-filament based memristive devices the switching can be fully stochastic. While individual switching events are random, the distribution and probability of switching can be well predicted and controlled. Rather than trying to force high switching probabilities using excess voltage or time, the inherent stochastic nature of resistive switching allows these binary devices to be used as building blocks for novel error-tolerant computing schemes such as stochastic computing and provides the needed "analog" feature for neuromorphic applications. To verify such potential, we demonstrated memristor-based stochastic bitstreams in both time and space domains, and show that an array of binary memristors can act as a multi-level "analog" device for neuromorphic applications.
Overview
AI snapshot
Written from the paper’s full text.
TL;DR
Memristive devices based on Ag filament formation in amorphous silicon show fully stochastic resistive switching, but the switching probability can be predicted and controlled by voltage and pulse width. This enables random bitstreams in time and space and allows a 4-device array to act as a multi-bit synapse for stochastic computing and neuromorphic applications.
Key findings
- Wait times before switching are broadly distributed and fit a Poisson distribution with one fitting parameter τ. For applied voltages of 2.5 V, 3.5 V, and 4.5 V, τ = 340 ms, 4.7 ms, and 0.38 ms, respectively; a 2 V increase in voltage drops the characteristic time by almost three orders of magnitude.
- Switching probability is cumulative and predictable: a 2.5 V/300 ms pulse switched the device 20 times out of 50 trials (bias ratio p = 0.4), while a 2.5 V/1000 ms pulse switched it 38 times out of 50 (p = 0.76), closely matching Eq. (2).
- Random bitstreams were generated in the time domain, and identical pulses applied to different devices produced 20-bit random bitstreams with similar bias ratios. A 4-device array programmed in parallel produced 4-bit-wide random bitstreams and, used as a whole, represents a 2-bit weight synapse; the authors state this is the first experimental demonstration of such a concept.
- Discrete short pulses are cumulative regardless of gap: with 2.5 V, 100 ms pulses, almost identical τ values were obtained for gaps of 10 ms and 500 ms, and the number of pulses needed to switch followed a Poisson distribution.
Methods
- Two-terminal crossbar devices were fabricated with a 60 nm boron-doped polysilicon bottom electrode, a 35 nm amorphous silicon insulating layer, and a silver top electrode, using electron beam lithography, PECVD, liftoff, and RIE.
- Electrical measurements used a National Instruments USB-6259 BNC data acquisition system with a DL 1211 current preamplifier and MATLAB code; parallel testing used analog switches (ADG1412) and an Atmega32u4 microcontroller.
- Switching statistics were measured by resetting devices to the OFF state, applying constant voltages (2.5, 3.5, 4.5 V) and repeating 100 times per bias, or applying fixed pulses (e.g., 2.5 V/300 ms and 2.5 V/1000 ms for 50 attempts); array experiments used a single 2.75 V, 1000 ms pulse for parallel programming and 2 V, 100 ms pulses for individual readout.
Limitations
- The paper states this is a proof-of-concept demonstration; large-scale implementation must address spatial variations, power, speed, endurance, and reliability, and logic applications require very high endurance with switching probability that does not degrade over time and is uniform among devices.
- The paper states that efficient peripheral circuit design to account for endurance limits under low-voltage operation and degradation of switching probability with time remains for future studies.
- The text makes evident that experiments were limited to single devices and a 4-device array, with small trial counts (50 or 100), and did not demonstrate large-scale arrays or long-term reliability.
Model-written summary. Check it against the paper before relying on it.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
30 Own result · 17 Not checked yet · 15 Own interpretation · 8 No basis given · 3 Sources not found · 2 Own method
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The Poisson distribution of the wait time, with the standard deviation equaling the mean, further verifies that the switching is random and stochastic in nature.”
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“However, careful examination of the switching effects reveals that significant randomness can exist, even in the same device.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“The wait time before switching shows apparent randomness.”
hedged- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“While individual switching events are random”
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 3 · plain
“the individual switching events occur randomly in nature.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 3 · plain
In the paper
“Binary resistive switching can be reliably observed in such devices, as shown in the inset to Fig. 1a and as discussed earlier (15).”
What the sources say
- Not checked yetcites [15] 15. Jo, S. H.; Lu, W. CMOS compatible nanoscale nonvolatile resistance switching memory. Nano letters 2008, 8 (2), 392-397. source
boosted- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“even for a given voltage applied to the same device, the wait time is not fixed but rather shows a large distribution.”
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
“Even for a fixed voltage on the same device, the wait time is not fixed and is random and broadly distributed.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“we demonstrated memristor-based stochastic bitstreams in both time and space domains”
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
“The memristive devices have been used to generate random bitstreams with predicable bias ratios in time and space domains.”
boosted- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Here we show that in metalfilament based memristive devices the switching can be fully stochastic.”
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
“we show binary memristive devices can exhibit native stochastic nature of resistive switching.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“show that an array of binary memristors can act as a multi-level 'analog' device for neuromorphic applications.”
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
“The array of binary memristive devices can also act as a multi-bit synapse in neuromorphic applications.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“With an increase in 2 V in the applied voltage, the characteristic time drops sharply by almost three orders of magnitude (Fig. 1d).”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
- It may state two separate claims as one. 25
- Probably not a substantial claim. 14
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“As can be seen from Fig. 1b and Fig. 1c, the switching time distribution at different programming voltages preserves the Poisson nature but the characteristic wait time decreases significantly as the bias voltage is increased.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Fig. 1 shows that excellent fit of the wait times to the Poisson distribution in Eq. (1) can be obtained with just one fitting parameter ( τ ), in agreement of the hypothesis of thermodynamic activation over a dominant energy barrier during filament formation in these devices.”
boostedcorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“the distribution and probability of switching can be well predicted and controlled.”
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
“the probability of switching can be predicted and controlled by the applied voltage and the pulse width used to program the device.”
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Also stated in: § Index Terms -Resistive memory, memristor, bitstreams, stochastic, neuromorphic computing · p. 11 · plain
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“It can be seen from DC sweeps that the devices exhibit standard switching hysteresis with clearly defined ON and OFF states and an apparent threshold voltage of ca. 5 V (Fig. 1a inset).”
hedged- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Since the characteristic wait time τ is strongly voltage dependent, the average wait time can be reduced drastically at higher voltages too.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“As expected, the distribution for the number of pulses needed to switch the device also follows a Poisson distribution and can be fitted with just one fitting parameter τ .”
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“It is also important to note here we can control only the bias ratio of the bit-stream (i.e. the overall number of 1s), while the locations of individual 1's are random.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Indeed, if the 4 devices share the same series resistor, we indeed observed only one device in the ON state after each programming pulse, i.e. the device array simply behaves as a single, larger device.”
boosteddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“In Fig. 4 we see that each bit in the bitstream was generated at a different time instance. In other words, the random bits were produced in serial fashion one after the other. This is the commonly termed as 'stochastic bitstream in time'.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“However, if each device has its own local, series resistor, as shown in Fig. 5a inset, the completion of the dominant filament in one device does not cause the decrease of voltage seen by other devices thus multiple devices can be switched.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“To modulate this bias ratio or, in other words, to generate another number y , all we need to do is to change the programming time or the programming voltage.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“Finally, we would like to point out that this study presents a proof-of-concept demonstration in stochastic and neuromorphic computing approaches by taking advantage of the inherent temporal variations in resistive devices.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The device switches to the ON state twenty times out of the fifty trials or attempts. This number closely matches that predicted from the theoretical curve given by Eq. (2).”
plaincorrelational- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“In other words, each time the array of 4 devices is programmed, we get a 4-bit wide random bitstream from the array, and exactly which device will switch cannot be predicted at the start of the programming cycle.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
In the paper
“The concept of using an array of memristive devices to represent a multi-bit synapse was proposed a few years ago (25), and to our knowledge this is the first experimental demonstration of such a concept.”
What the sources say
- Not matchedcites [25] 25. Likharev, K.; Mayr, A.; Muckra, I.; T. CrossNets: High-Performance Neuromorphic Architectures for CMOL Circuits. Annals of the New York Academy of Sciences 2003, 1006 (1), 146-163.
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
hedged- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
- Not matched
None of the sources cited for this claim have been checked yet.
In the paper
“Filament formation involves oxidation, ion transport and reduction processes, all of which are thermodynamically driven (5,18) and require overcoming specific activation energies.”
What the sources say
- Not checked yetcites [5] 5. Valov, I.; Waser, R.; Jameson, J. R.; Kozicki, M. N. Electrochemical metallization memoriesfundamentals, applications, prospects. Nanotechnology 2011, 22 (25), 254003. source
- Not checked yetcites [18] 18. Lu, W.; Jeong, D. S.; Kozicki, M.; Waser, R. Electrochemical metallization cells-blending nanoionics into nanoelectronics? MRS bulletin 2012, 37 (02), 124-130. source
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“As a result, even for the same filament in the same device, the wait time will be broadly distributed and in principle can only be predicted in terms of statistics while the individual switching events occur randomly in nature.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
None of the sources cited for this claim have been checked yet.
In the paper
“The change from OFF to ON state is explained by the formation of a dominating Ag filament (15,16).”
What the sources say
- Not checked yetcites [15] 15. Jo, S. H.; Lu, W. CMOS compatible nanoscale nonvolatile resistance switching memory. Nano letters 2008, 8 (2), 392-397. source
- Not checked yetcites [16] 16. Yang, Y.; Gao, P.; Gaba, S.; Chang, T.; Pan, X.; Lu, W. Observation of conducting filament growth in nanoscale resistive memories. Nature Communications 2012, 3, 732. source
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“Thus by increasing the programming voltage, τ can be reduced significantly down to the nanosecond regime (14) so switching with high success rate can be achieved.”
What the sources say
- Not checked yetcites [14] 14. Jo, S. H.; Kim, K.-H.; Lu, W. Programmable resistance switching in nanoscale two-terminal devices. Nano letters 2009, 9 (1), 496-500. source
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: unclear — It is unclear whether the paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Since stochastic operations require lower voltages than conventional binary switching it is expected that even better endurance can be obtained using the proposed approach.”
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. The paper may give no reason why it holds.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“For more efficient computing, bitstreams in space domain, i.e. bits generated in parallel or 'stochastic bitstreams in space' are also required, which leads to parallel processing of the bitstreams.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: fails — The paper may give no reason why it holds.
Probably not a substantial claim. The paper may give no reason why it holds. It may state two separate claims as one.
In the paper
“SNGs account for the majority of the resource usage in stochastic computing, with a cost as high as 80% of the entire system (24).”
What the sources say
- Not matchedcites [24] 24. Alaghi, A.; Hayes, J. P. Survey of Stochastic Computing. ACM Transactions on Embedded Computing Systems (TECS) to appear .
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
- Not matched
None of the sources cited for this claim have been checked yet.
In the paper
“Recent studies have already shown that similar devices can be very reliable, robust and switch within nanoseconds (31,32,33).”
What the sources say
- Not checked yetcites [31] 31. Lee, M.-J.; Lee, C. B.; Lee D.; Lee, S. R.; Chang M.; Hur J. H., Kim Y.-B.; Kim, C- .J.; Seo, D. H.; Seo, S.; Chung, U.-I.; Yoo I.-K. & Kim K. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O 5x /TaO 2x bilayer structures. Nature Materials, 2011 , 10, 625-630.
- Not checked yetcites [32] 32. Yang, J.-J.; Zhang, M.-X.; Strachan, J. P.; Miao, F.; Pickett, M.D.; Kelley, R. D.; Mederos-Ribeiro G and Williams, R. S. High switchign endurance in TaOx memristive devices. Appl Phys. Lett. 2010 , 97, 232102 .
- Not checked yetcites [33]
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
What the paper did — it cites no source for this, so there is none to check. The quote shows it is in the paper.
In the paper
“In this experiment, after each programming pulse the device was reset to the same original OFF state so each programming pulse starts with the same initial condition.”
plain- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“However, using excessively high voltage and excessively long pulses can result in an increased power envelope and lead to unnecessary device degradation.”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. It may state two separate claims as one.
None of the sources cited for this claim have been checked yet.
In the paper
“Binary synapses are easier to fabricate, more robust and offer larger dynamic range (4,5).”
What the sources say
- Not checked yetcites [4] 4. Waser, R.; Aono, M. Nanoionics-based resistive switching memories. Nature materials 2007, 6 (11), 833-840. source
- Not checked yetcites [5] 5. Valov, I.; Waser, R.; Jameson, J. R.; Kozicki, M. N. Electrochemical metallization memoriesfundamentals, applications, prospects. Nanotechnology 2011, 22 (25), 254003. source
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
None of the sources cited for this claim have been checked yet.
In the paper
“Stochastic computing was first proposed in the 1960s (26,27) but like many concepts proposed ahead of their time it never become mainstream due to the exponential growth of digital computers.”
What the sources say
- Not checked yetcites [26] 26. Gaines, B. Stochastic computing systems. Advances in Information Systems Science 1969, 2 (2), 37172. source
- Not checked yetcites [27] 27. Poppelbaum, W.; Afuso, C.; Esch, J. Stochastic computing elements and systems. Proceedings of the November 14-16, 1967, fall joint computer conference , 1967; pp 635-644. source
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: fails — The paper’s conclusions may not depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim. The paper’s conclusions may not depend on it. It may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Rather than trying to eliminate the non-determinism to use these devices in deterministic memory applications, the ability to produce random bitstreams and multi-bit synapses using binary memristive devices based on the native stochastic switching principle may potentially lead to novel non von-Neumann, alternative computing paradigms.”
hedgedconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim.
None of the sources cited for this claim have been checked yet.
In the paper
“It is possible to achieve multi-bit in binary memristive devices by controlling the programming current (5), however, precise current control in a large network is extremely challenging (30).”
What the sources say
- Not checked yetcites [5] 5. Valov, I.; Waser, R.; Jameson, J. R.; Kozicki, M. N. Electrochemical metallization memoriesfundamentals, applications, prospects. Nanotechnology 2011, 22 (25), 254003. source
- Not checked yetcites [30] 30. Kim, K.-H.; Gaba, S.; Wheeler, D.; Cruz-Albrecht, J. M.; Hussain, T.; Srinivasa, N.; Lu, W. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano letters 2011, 12 (1), 389-395. source
hedgeddirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“First, we note that the switching probability can be calculated by integrating the Poisson distribution Eq. (1), which leads to”
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The ability to generate random bitstreams using memristive devices can represent an intriguing option for efficient computation of data intensive problems such as image processing using stochastic approaches.”
plainconditional- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
Probably not a substantial claim.
None of the sources cited for this claim have been checked yet.
In the paper
“In particular, in these devices the filament characteristics can be controlled during programming by external circuit parameters such as series-resistance (29) and programming pulse height/width (14,17) so similar switching characteristics can be obtained in different devices.”
What the sources say
- Not checked yetcites [29] 29. Gaba, S.; Choi, S.; Sheridan, P.; Chang, T.; Yang, Y.; Lu, W. Improvement of RRAM Device Performance Through On-Chip Resistors. MRS Proceedings , 2012. source
- Not checked yetcites [14] 14. Jo, S. H.; Kim, K.-H.; Lu, W. Programmable resistance switching in nanoscale two-terminal devices. Nano letters 2009, 9 (1), 496-500. source
- Not checked yetcites [17] 17. Sheridan, P.; Kim, K.-H.; Gaba, S.; Chang, T.; Chen, L.; Lu, W. Device and SPICE modeling of RRAM devices. Nanoscale 2011, 3 (9), 3833-3840. source
plaindirect- Asserted: passes — The authors put it forward as true.
- Checkable: passes — It can be checked against evidence.
- Load-bearing: passes — The paper’s conclusions depend on it.
- Based: passes — The paper gives a reason why it holds.
It may state two separate claims as one.
The authors state this as an assumption.
For stochastic computing multiplication via a bit-wise AND operation, the input bitstreams x and y are independent and completely uncorrelated.
“This operation assumes that x and y are independent bitstreams that are completely uncorrelated.”
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“On the other hand, this natural stochasticity can be valuable for hardware security applications.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [26]
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828 · cited 1×
“Devices based on resistive switching (memristive devices or memristors (2-6) have been identified as a major contender in applications ranging from nonvolatile memory storage, logic, to neuromorphic systems due to their scalability (7), low power operation (8), and large connectivity offered in a crossbar structure (9…”
BackgroundMemristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · cited 3×
“(2) is that we can now predict the switching probability at a given programming voltage and pulse width, even though each switching event is random.”
BackgroundNanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923 · cited 3×
“Binary synapses are easier to fabricate, more robust and offer larger dynamic range (4,5).”
BackgroundMemristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885 · cited 2×
“oxygen vacancy in oxides) (6) based memristive systems as well.”
BackgroundLee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Observation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications · doi:10.1038/ncomms1737 · Cited by 1,208 · cited 1×
“The change from OFF to ON state is explained by the formation of a dominating Ag filament (15,16).”
BackgroundSelf-citationA scalable neuristor built with Mott memristors
Pickett, M. D., Medeiros‐Ribeiro, G., & Williams, R. S. (2012) · Nature Materials · doi:10.1038/nmat3510 · Cited by 1,046 · cited 1×
“Active circuits based on memristors have also been demonstrated recently (10,11).”
BackgroundKim, K.-H., Gaba, S., Wheeler, D., Cruz-Albrecht, J. M., Hussain, T., Srinivasa, N., & Lu, W. (2012) · Nano Letters · doi:10.1021/nl203687n · Cited by 924 · cited 1×
“It is possible to achieve multi-bit in binary memristive devices by controlling the programming current (5), however, precise current control in a large network is extremely challenging (30).”
BackgroundSelf-citationElectrochemical metallization memories—fundamentals, applications, prospects
Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921 · cited 6×
“Devices based on resistive switching (memristive devices or memristors (2-6) have been identified as a major contender in applications ranging from nonvolatile memory storage, logic, to neuromorphic systems due to their scalability (7), low power operation (8), and large connectivity offered in a crossbar structure (9…”
BackgroundInfluentialGaines, B. R. (1969) · Advances in Information Systems Science · doi:10.1007/978-1-4899-5841-9_2 · Cited by 745 · cited 1×
“Stochastic computing was first proposed in the 1960s (26,27) but like many concepts proposed ahead of their time it never become mainstream due to the exponential growth of digital computers.”
BackgroundSub-nanosecond switching of a tantalum oxide memristor
Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/48/485203 · Cited by 701
High switching endurance in TaOx memristive devices
Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S. (2010) · Applied Physics Letters · doi:10.1063/1.3524521 · Cited by 637
Govoreanu, B., Kar, G. S., Chen, Y., Paraschiv, V., Kubicek, S., Fantini, A., Radu, I. P., Goux, L., Clima, S., Degraeve, R., et al. (2011) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2011.6131652 · Cited by 623 · cited 1×
“Devices based on resistive switching (memristive devices or memristors (2-6) have been identified as a major contender in applications ranging from nonvolatile memory storage, logic, to neuromorphic systems due to their scalability (7), low power operation (8), and large connectivity offered in a crossbar structure (9…”
BackgroundSurvey of Stochastic Computing
Alaghi, A., & Hayes, J. P. (2013) · ACM Transactions on Embedded Computing Systems · doi:10.1145/2465787.2465794 · Cited by 594 · cited 2×
“proaches this is achieved via a stochastic number generator (SNG) 24). SNGs account for the majority of the resource usage in stochastic ( 9 computing, with a cost as high as 80% of the entire system (24). The ability to generate random bitstreams using memristive devices can represent an intriguing option for efficie…”
BackgroundHigh-Density Crossbar Arrays Based on a Si Memristive System
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl8037689 · Cited by 574 · cited 3×
“Devices based on resistive switching (memristive devices or memristors (2-6) have been identified as a major contender in applications ranging from nonvolatile memory storage, logic, to neuromorphic systems due to their scalability (7), low power operation (8), and large connectivity offered in a crossbar structure (9…”
BackgroundSelf-citationExponential ionic drift: fast switching and low volatility of thin-film memristors
Strukov, D. B., & Williams, R. S. (2008) · Applied Physics A · doi:10.1007/s00339-008-4975-3 · Cited by 499 · cited 1×
“The strong voltage dependence of (average) switching time is expected within the filament formation picture since the energy barriers for both the oxidation and the ion transport processes are field-dependent (the reduction processes of the ions is not thought to be the rate-limiting process) (5,18) and the effective…”
BackgroundCMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
Jo, S. H., & Lu, W. (2008) · Nano Letters · doi:10.1021/nl073225h · Cited by 406 · cited 1×
“The change from OFF to ON state is explained by the formation of a dominating Ag filament (15,16).”
BackgroundSelf-citationProgrammable Resistance Switching in Nanoscale Two-Terminal Devices
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl803669s · Cited by 302
Self-citationYu, S., Guan, X., & Wong, H. ‐. P. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2184544 · Cited by 226 · cited 2×
“However, a major roadblock that needs to be overcome before potential commercialization of these devices is the potentially large variations in the switching parameters (12,13).”
BackgroundNanoionics-based resistive switching memories
Waser, R., & Aono, M. (2009) · Co-Published with Macmillan Publishers Ltd, UK eBooks · doi:10.1142/9789814287005_0016 · Cited by 189
Variability of resistive switching memories and its impact on crossbar array performance
Chen, A., & Lin, M.-R. (2011) · IEEE International Reliability Physics Symposium proceedings · doi:10.1109/irps.2011.5784590 · Cited by 155 · cited 1×
“However, a major roadblock that needs to be overcome before potential commercialization of these devices is the potentially large variations in the switching parameters (12,13).”
BackgroundCrossNets: High‐Performance Neuromorphic Architectures for CMOL Circuits
LIKHAREV, K., MAYR, A., MUCKRA, I., & TÜREL, Ö. (2003) · Annals of the New York Academy of Sciences · doi:10.1196/annals.1292.010 · Cited by 121 · cited 2×
“the cumulative time during which the programming voltage is applied) in these binary devices if they are used as synapses in neuromorphic systems (25).”
BackgroundStochastic computing elements and systems
Poppelbaum, W. J., Afuso, C., & Esch, J. W. (1967) · Proceedings of the November 14-16, 1967, fall joint computer conference on - AFIPS '67 (Fall) · doi:10.1145/1465611.1465696 · Cited by 114 · cited 1×
“Stochastic computing was first proposed in the 1960s (26,27) but like many concepts proposed ahead of their time it never become mainstream due to the exponential growth of digital computers.”
BackgroundMeasuring the switching dynamics and energy efficiency of tantalum oxide memristors
Strachan, J. P., Torrezan, A. C., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/50/505402 · Cited by 114 · cited 1×
“Devices based on resistive switching (memristive devices or memristors (2-6) have been identified as a major contender in applications ranging from nonvolatile memory storage, logic, to neuromorphic systems due to their scalability (7), low power operation (8), and large connectivity offered in a crossbar structure (9…”
BackgroundElectrochemical metallization cells—blending nanoionics into nanoelectronics?
Lu, W., Jeong, D. S., Kozicki, M., & Waser, R. (2012) · MRS Bulletin · doi:10.1557/mrs.2012.5 · Cited by 113
Self-citationVoltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
Schroeder, H., Zhirnov, V. V., Cavin, R. K., & Waser, R. (2010) · Journal of Applied Physics · doi:10.1063/1.3319591 · Cited by 108 · cited 1×
“The strong voltage dependence of (average) switching time is expected within the filament formation picture since the energy barriers for both the oxidation and the ion transport processes are field-dependent (the reduction processes of the ions is not thought to be the rate-limiting process) (5,18) and the effective…”
BackgroundDevice and SPICE modeling of RRAM devices
Sheridan, P., Kim, K.-H., Gaba, S., Chang, T., Chen, L., & Lu, W. (2011) · Nanoscale · doi:10.1039/c1nr10557d · Cited by 98 · cited 3×
“Previous studies on such devices (4,14,17) have shown that the resistance switching is associated with the formation and rupture of a single dominant, nanoscale conducting filament.”
BackgroundSelf-citationSelf-Adaptive Write Circuit for Low-Power and Variation-Tolerant Memristors
Jo, K.-H., Jung, C.-M., Min, K.-S., & Kang, S.-M. (2010) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2010.2052108 · Cited by 53 · cited 1×
“5 device after every write operation (19), or error-control coding and redundancy (20,21) can be employed.”
BackgroundMeuffels, P., & Schroeder, H. (2011) · Applied Physics A · doi:10.1007/s00339-011-6578-7 · Cited by 44
Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes
Kuekes, P. J., Robinett, W., Roth, R. M., Seroussi, G., Snider, G. S., & Williams, R. S. (2006) · Nanotechnology · doi:10.1088/0957-4484/17/4/035 · Cited by 40 · cited 1×
“5 device after every write operation (19), or error-control coding and redundancy (20,21) can be employed.”
BackgroundKuekes, P. J., Robinett, W., & Williams, R. S. (2005) · Nanotechnology · doi:10.1088/0957-4484/16/9/001 · Cited by 30 · cited 1×
“for applications in deterministic storage and logic applications, feedback schemes that check the state of the 5 device after every write operation (19), or error-control coding and redundancy can be (20,21) employed. Alternatively, excess programming voltage and long pulse width can be used to ensure the correctness…”
BackgroundLu, W. D. (2012) · Nature Materials · doi:10.1038/nmat3524 · Cited by 22 · cited 1×
“Active circuits based on memristors have also been demonstrated recently (10,11).”
BackgroundSelf-citationThe Synthesis of Stochastic Circuits for Nanoscale Computation
Qian, W., Backes, J., & Riedel, M. D. (2009) · International Journal of Nanotechnology and Molecular Computation · doi:10.4018/jnmc.2009120903 · Cited by 12 · cited 2×
“For example, the multiplication of two numbers x and y can be achieved by simply performing a bit-wise AND operation on the two bitstreams representing x and y (28).”
BackgroundMethodImprovement of RRAM Device Performance Through On-Chip Resistors
Gaba, S., Choi, S., Sheridan, P., Chang, T., Yang, Y., & Lu, W. (2012) · MRS Proceedings · doi:10.1557/opl.2012.1102 · Cited by 2 · cited 1×
“In particular, in these devices the filament characteristics can be controlled during programming by external circuit parameters such as series-resistance (29) and programming pulse height/width (14,17) so similar switching characteristics can be obtained in different devices.”
BackgroundSelf-citationThe Synthesis of Stochastic Circuits for Nanoscale Computation
Qian, W., Backes, J., & Riedel, M. D. (2011) · IGI Global eBooks · doi:10.4018/9781609601867.ch018 · Cited by 1
Cited by
Sorted by citations
Memory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
Pan, F., Gao, S., Chen, C., Song, C., & Zeng, F. (2014) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2014.06.002 · Cited by 1,412
Stochastic phase-change neurons
Tůma, T., Pantazi, A., Gallo, M. L., Sebastian, A., & Eleftheriou, E. S. (2016) · Nature Nanotechnology · doi:10.1038/nnano.2016.70 · Cited by 1,107
An artificial nociceptor based on a diffusive memristor
Yoon, J. H., Wang, Z., Kim, K. M., Wu, H., Ravichandran, V., Xia, Q., Hwang, C. S., & Yang, J. J. (2018) · Nature Communications · doi:10.1038/s41467-017-02572-3 · Cited by 531
Metadata
- Authors
- Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W.
- Affiliations
- University of Michigan (US)
- Corresponding author
- Lu, Wei
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2013
- Volume
- 5
- Issue
- 13
- Pages
- 5872
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W2148267286
- Semantic Scholar
- 3f0d761f6dabea7d51ed9a69e9cde6865122afd9
- Cited by
- 307
- References
- 35
- Citations by year
- 2026: 14 · 2025: 23 · 2024: 14 · 2023: 22 · 2022: 24 · 2021: 28 · 2020: 32 · 2019: 30 · 2018: 27 · 2017: 29 · 2016: 19 · 2015: 25 · 2014: 16 · 2013: 3
- FWCI
- 12.60
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Nanoscale (publishedVersion)
- PubMed (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- memristors, resistive switching, stochastic switching, stochastic computing, neuromorphic computing, error-tolerant computing, memristor arrays, non-volatile memory
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
A language model drew the claims from the paper on 2026-10-09, under version 3 of the claim definition (model deepseek-v4.1-flash, prompt extract-v3).
A second model labelled each claim on 2026-10-09 (model jev-1.13-20260917, definition revision gold-guideline-v0.2).
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
