The DOI matches its Crossref record; 80 of the 80 references it cites were found in a registry or an index.
Two-dimensional flexible nanoelectronics
Open accessOverview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
Lee, C., Wei, X., Kysar, J. W., & Hone, J. (2008) · Science · doi:10.1126/science.1157996 · Cited by 20,847
Self-citationElectronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Li, X., Cai, W., An, J., Kim, S., Nah, J., Yang, D., Piner, R., Velamakanni, A., Jung, I., Tutuc, E., et al. (2009) · Science · doi:10.1126/science.1171245 · Cited by 11,220
Black phosphorus field-effect transistors
Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.35 · Cited by 8,413
Roll-to-roll production of 30-inch graphene films for transparent electrodes
Bae, S., Kim, H., Lee, Y., Xu, X., Park, J.-S., Zheng, Y., Balakrishnan, J., Lei, T., Ri Kim, H., Song, Y. I., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.132 · Cited by 8,136
Graphene photonics and optoelectronics
Bonaccorso, F., Sun, Z., Hasan, T., & Ferrari, A. C. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.186 · Cited by 7,726
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Liu, H., Neal, A. T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn501226z · Cited by 6,480
Materials and Mechanics for Stretchable Electronics
Rogers, J. A., Someya, T., & Huang, Y. (2010) · Science · doi:10.1126/science.1182383 · Cited by 5,042
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Kim, D.-H., Lu, N., Ma, R., Kim, Y.-S., Kim, R.-H., Wang, S., Wu, J., Won, S. M., Tao, H., Islam, A., et al. (2011) · Science · doi:10.1126/science.1206157 · Cited by 4,836
Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon
Vogt, P., De Padova, P., Quaresima, C., Avila, J., Frantzeskakis, E., Asensio, M. C., Resta, A., Ealet, B., & Le Lay, G. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.155501 · Cited by 3,903
Quantum Transport: Atom to Transistor
Datta, S. (2005) · Cambridge University Press eBooks · doi:10.1017/cbo9781139164313 · Cited by 3,227
Watanabe, K., Taniguchi, T., & Kanda, H. (2004) · Nature Materials · doi:10.1038/nmat1134 · Cited by 3,057
One-Dimensional Electrical Contact to a Two-Dimensional Material
Wang, L., Meric, I., Huang, P. Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L. M., Muller, D. A., et al. (2013) · Science · doi:10.1126/science.1244358 · Cited by 3,042
Self-citationLarge Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Song, L., Ci, L., Lu, H., Sorokin, P. B., Jin, C., Ni, J., Kvashnin, A. G., Kvashnin, D. G., Lou, J., Yakobson, B. I., et al. (2010) · Nano Letters · doi:10.1021/nl1022139 · Cited by 2,689
Stretching and Breaking of Ultrathin MoS2
Bertolazzi, S., Brivio, J., & Kis, A. (2011) · ACS Nano · doi:10.1021/nn203879f · Cited by 2,680
100-GHz Transistors from Wafer-Scale Epitaxial Graphene
Lin, Y.-M., Dimitrakopoulos, C., Jenkins, K. A., Farmer, D. B., Chiu, H.-Y., Grill, A., & Avouris, P. (2010) · Science · doi:10.1126/science.1184289 · Cited by 2,514
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Two-Dimensional Phonon Transport in Supported Graphene
Seol, J. H., Jo, I., Moore, A. L., Lindsay, L., Aitken, Z. H., Pettes, M. T., Li, X., Yao, Z., Huang, R., Broido, D., et al. (2010) · Science · doi:10.1126/science.1184014 · Cited by 1,926
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y.-J., Gholinia, A., Haigh, S. J., Makarovsky, O., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.224 · Cited by 1,751
Fundamentals of microfabrication : the science of miniaturization
Madou, M. J. (2002) · Cited by 1,593
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.25 · Cited by 1,523
A review of chemical vapour deposition of graphene on copper
Mattevi, C., Kim, H., & Chhowalla, M. (2011) · J. Mater. Chem. · doi:10.1039/c0jm02126a · Cited by 1,452
User-interactive electronic skin for instantaneous pressure visualization
Wang, C., Hwang, D., Yu, Z., Takei, K., Park, J., Chen, T., Ma, B., & Javey, A. (2013) · Nature Materials · doi:10.1038/nmat3711 · Cited by 1,182
Viventi, J., Kim, D.-H., Vigeland, L., Frechette, E. S., Blanco, J. A., Kim, Y.-S., Avrin, A. E., Tiruvadi, V. R., Hwang, S.-W., Vanleer, A. C., et al. (2011) · Nature Neuroscience · doi:10.1038/nn.2973 · Cited by 1,136
Lee, G.-H., Yu, Y.-J., Cui, X., Petrone, N., Lee, C.-H., Choi, M. S., Lee, D.-Y., Lee, C., Yoo, W. J., Watanabe, K., et al. (2013) · ACS Nano · doi:10.1021/nn402954e · Cited by 1,095
Self-citationSuperior mechanical flexibility of phosphorene and few-layer black phosphorus
Wei, Q., & Peng, X. (2014) · Applied Physics Letters · doi:10.1063/1.4885215 · Cited by 1,086
Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy
Yoon, D., Son, Y.-W., & Cheong, H. (2011) · Nano Letters · doi:10.1021/nl201488g · Cited by 1,076
Graphene-based wireless bacteria detection on tooth enamel
Mannoor, M. S., Tao, H., Clayton, J. D., Sengupta, A., Kaplan, D. L., Naik, R. R., Verma, N., Omenetto, F. G., & McAlpine, M. C. (2012) · Nature Communications · doi:10.1038/ncomms1767 · Cited by 1,014
Flexible Electronics: The Next Ubiquitous Platform
Nathan, A., Ahnood, A., Cole, M. T., Lee, S., Suzuki, Y., Hiralal, P., Bonaccorso, F., Hasan, T., Garcia-Gancedo, L., Dyadyusha, A., et al. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190168 · Cited by 1,000
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
Liu, W., Kang, J., Sarkar, D., Khatami, Y., Jena, D., & Banerjee, K. (2013) · Nano Letters · doi:10.1021/nl304777e · Cited by 985
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries
Lee, G.-H., Cooper, R. C., An, S. J., Lee, S., van der Zande, A., Petrone, N., Hammerberg, A. G., Lee, C., Crawford, B., Oliver, W., et al. (2013) · Science · doi:10.1126/science.1235126 · Cited by 889
Self-citationYan, R., Simpson, J. R., Bertolazzi, S., Brivio, J., Watson, M., Wu, X., Kis, A., Luo, T., Hight Walker, A. R., & Xing, H. G. (2014) · ACS Nano · doi:10.1021/nn405826k · Cited by 876
Defect-Dominated Doping and Contact Resistance in MoS2
McDonnell, S., Addou, R., Buie, C., Wallace, R. M., & Hinkle, C. L. (2014) · ACS Nano · doi:10.1021/nn500044q · Cited by 824
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
Pu, J., Yomogida, Y., Liu, K.-K., Li, L.-J., Iwasa, Y., & Takenobu, T. (2012) · Nano Letters · doi:10.1021/nl301335q · Cited by 823
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
Bao, W., Cai, X., Kim, D., Sridhara, K., & Fuhrer, M. S. (2013) · Applied Physics Letters · doi:10.1063/1.4789365 · Cited by 791
Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride
Jo, I., Pettes, M. T., Kim, J., Watanabe, K., Taniguchi, T., Yao, Z., & Shi, L. (2013) · Nano Letters · doi:10.1021/nl304060g · Cited by 770
Flexible high-performance carbon nanotube integrated circuits
Sun, D.-M., Timmermans, M. Y., Tian, Y., Nasibulin, A. G., Kauppinen, E. I., Kishimoto, S., Mizutani, T., & Ohno, Y. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2011.1 · Cited by 755
Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
Nayak, A. P., Bhattacharyya, S., Zhu, J., Liu, J., Wu, X., Pandey, T., Jin, C., Singh, A. K., Akinwande, D., & Lin, J.-F. (2014) · Nature Communications · doi:10.1038/ncomms4731 · Cited by 641
Self-citationNonlinear elastic behavior of two-dimensional molybdenum disulfide
Cooper, R. C., Lee, C., Marianetti, C. A., Wei, X., Hone, J., & Kysar, J. W. (2013) · Physical Review B · doi:10.1103/physrevb.87.035423 · Cited by 603
Self-citationHigh-mobility field-effect transistors based on transition metal dichalcogenides
Podzorov, V., Gershenson, M. E., Kloc, C., Zeis, R., & Bucher, E. (2004) · Applied Physics Letters · doi:10.1063/1.1723695 · Cited by 595
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Larentis, S., Fallahazad, B., & Tutuc, E. (2012) · Applied Physics Letters · doi:10.1063/1.4768218 · Cited by 591
The mechanical strength of a covalent bond calculated by density functional theory
Beyer, M. K. (2000) · The Journal of Chemical Physics · doi:10.1063/1.481330 · Cited by 527
Graphene Transistors: Status, Prospects, and Problems
Schwierz, F. (2013) · Proceedings of the IEEE · doi:10.1109/jproc.2013.2257633 · Cited by 517
Kobayashi, T., Bando, M., Kimura, N., Shimizu, K., Kadono, K., Umezu, N., Miyahara, K., Hayazaki, S., Nagai, S., Mizuguchi, Y., et al. (2013) · Applied Physics Letters · doi:10.1063/1.4776707 · Cited by 487
Chang, H.-Y., Yang, S., Lee, J., Tao, L., Hwang, W.-S., Jena, D., Lu, N., & Akinwande, D. (2013) · ACS Nano · doi:10.1021/nn401429w · Cited by 487
Self-citationIntrinsic electrical transport properties of monolayer silicene and MoS2from first principles
Li, X., Mullen, J. T., Jin, Z., Borysenko, K. M., Buongiorno Nardelli, M., & Kim, K. W. (2013) · Physical Review B · doi:10.1103/physrevb.87.115418 · Cited by 462
State-of-the-Art Graphene High-Frequency Electronics
Wu, Y., Jenkins, K. A., Valdes-Garcia, A., Farmer, D. B., Zhu, Y., Bol, A. A., Dimitrakopoulos, C., Zhu, W., Xia, F., Avouris, P., et al. (2012) · Nano Letters · doi:10.1021/nl300904k · Cited by 420
Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene
Petrone, N., Dean, C. R., Meric, I., van der Zande, A. M., Huang, P. Y., Wang, L., Muller, D., Shepard, K. L., & Hone, J. (2012) · Nano Letters · doi:10.1021/nl204481s · Cited by 420
Self-citationJiang, J.-W., Park, H. S., & Rabczuk, T. (2013) · Journal of Applied Physics · doi:10.1063/1.4818414 · Cited by 408
Yoon, T., Shin, W. C., Kim, T. Y., Mun, J. H., Kim, T.-S., & Cho, B. J. (2012) · Nano Letters · doi:10.1021/nl204123h · Cited by 399
Suk, J. W., Lee, W. H., Lee, J., Chou, H., Piner, R. D., Hao, Y., Akinwande, D., & Ruoff, R. S. (2013) · Nano Letters · doi:10.1021/nl304420b · Cited by 385
Self-citationAll Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor
Das, S., Gulotty, R., Sumant, A. V., & Roelofs, A. (2014) · Nano Letters · doi:10.1021/nl5009037 · Cited by 376
High-frequency self-aligned graphene transistors with transferred gate stacks
Cheng, R., Bai, J., Liao, L., Zhou, H., Chen, Y., Liu, L., Lin, Y.-C., Jiang, S., Huang, Y., & Duan, X. (2012) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1205696109 · Cited by 369
Cao, Q., Hur, S. ‐., Zhu, Z. ‐., Sun, Y. G., Wang, C. ‐., Meitl, M. A., Shim, M., & Rogers, J. A. (2006) · Advanced Materials · doi:10.1002/adma.200501740 · Cited by 360
Song, H. S., Li, S. L., Gao, L., Xu, Y., Ueno, K., Tang, J., Cheng, Y. B., & Tsukagoshi, K. (2013) · Nanoscale · doi:10.1039/c3nr01899g · Cited by 307
Chen, J. ‐., Ishigami, M., Jang, C., Hines, D. R., Fuhrer, M. S., & Williams, E. D. (2007) · Advanced Materials · doi:10.1002/adma.200701059 · Cited by 296
Organic and polymer transistors for electronics
Dodabalapur, A. (2006) · Materials Today · doi:10.1016/s1369-7021(06)71444-4 · Cited by 291
High-mobility carbon-nanotube thin-film transistors on a polymeric substrate
Snow, E. S., Campbell, P. M., Ancona, M. G., & Novak, J. P. (2005) · Applied Physics Letters · doi:10.1063/1.1854721 · Cited by 266
Elastic Moduli of Organic Electronic Materials by the Buckling Method
Tahk, D., Lee, H. H., & Khang, D.-Y. (2009) · Macromolecules · doi:10.1021/ma900137k · Cited by 257
Bending experiment on pentacene field-effect transistors on plastic films
Sekitani, T., Kato, Y., Iba, S., Shinaoka, H., Someya, T., Sakurai, T., & Takagi, S. (2005) · Applied Physics Letters · doi:10.1063/1.1868868 · Cited by 226
Chang, H., Zhu, W., & Akinwande, D. (2014) · Applied Physics Letters · doi:10.1063/1.4868536 · Cited by 212
Self-citationExperimental-Computational Investigation of ZnO nanowires Strength and Fracture
Agrawal, R., Peng, B., & Espinosa, H. D. (2009) · Nano Letters · doi:10.1021/nl9023885 · Cited by 206
The thermal expansion of 2 H-MoS2, 2 H-MoSe2and 2 H-WSe2between 20 and 800°C
El-Mahalawy, S. H., & Evans, B. L. (1976) · Journal of Applied Crystallography · doi:10.1107/s0021889876011709 · Cited by 159
Lee, J., Ha, T., Li, H., Parrish, K. N., Holt, M., Dodabalapur, A., Ruoff, R. S., & Akinwande, D. (2013) · ACS Nano · doi:10.1021/nn403487y · Cited by 144
Self-citationFast flexible electronics with strained silicon nanomembranes
Zhou, H., Seo, J., Paskiewicz, D. M., et al. (2013) · Scientific Reports · doi:10.1038/srep01291 · Cited by 125
Yan, Z., Sun, Z., Lu, W. D., et al. (2011) · ACS Nano · doi:10.1021/nn1034845 · Cited by 115
Granzner, R., Polyakov, V. M., Schwierz, F., Kittler, M., Luyken, R. J., Rösner, W., & Städele, M. (2005) · Microelectronic Engineering · doi:10.1016/j.mee.2005.08.003 · Cited by 107
Flexible and transparent all-graphene circuits for quaternary digital modulations
Lee, S., Lee, K., Liu, C., Kulkarni, G. S., & Zhong, Z. (2012) · Nature Communications · doi:10.1038/ncomms2021 · Cited by 102
In-plane thermal conductivity of disordered layered WSe2 and (W)x(WSe2)y superlattice films
Mavrokefalos, A., Nguyen, N. T., Pettes, M. T., Johnson, D. C., & Shi, L. (2007) · Applied Physics Letters · doi:10.1063/1.2800888 · Cited by 92
High-Performance Flexible Thin-Film Transistors Exfoliated from Bulk Wafer
Zhai, Y., Mathew, L., Rao, R. A., Xu, D., & Banerjee, S. K. (2012) · Nano Letters · doi:10.1021/nl302735f · Cited by 86
Wang, C., Chien, J., Fang, H. M., Takei, K., Nah, J., Plis, E. A., Krishna, S., Niknejad, A. M., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301699k · Cited by 79
Thermal anisotropy in nano-crystalline MoS 2 thin films
Muratore, C., Varshney, V., Gengler, J. J., Hu, J., Bultman, J. E., Roy, A. K., Farmer, B. L., & Voevodin, A. A. (2013) · Physical Chemistry Chemical Physics · doi:10.1039/c3cp53746c · Cited by 75
Lee, J., Ha, T., Parrish, K. N., Chowdhury, S. F., Tao, L., Dodabalapur, A., & Akinwande, D. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2012.2233707 · Cited by 68
Self-citationLow-Frequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene
Jo, I., Hsu, I.-K., Lee, Y. J., Sadeghi, M. M., Kim, S., Cronin, S. B., Tutuc, E., Banerjee, S. K., Yao, Z., & Shi, L. (2010) · Nano Letters · doi:10.1021/nl102858c · Cited by 66
Direct Delamination of Graphene for High‐Performance Plastic Electronics
Wang, X., Tao, L., Hao, Y., Liu, Z., Chou, H., Kholmanov, I. N., Chen, S., Tan, C. C., Jayant, N., Yu, Q., et al. (2013) · Small · doi:10.1002/smll.201301892 · Cited by 60
Self-citationLow-Voltage Double-Gate ZnO Thin-Film Transistor Circuits
Li, Y. V., Ramirez, J. I., Sun, K. G., & Jackson, T. N. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2013.2263193 · Cited by 38
Synthesis and tribological properties of WSex films prepared by magnetron sputtering
Domínguez-Meister, S., Justo, A., & Sánchez-López, J. C. (2013) · Materials Chemistry and Physics · doi:10.1016/j.matchemphys.2013.07.004 · Cited by 36
Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics
Yoon, C., Cho, G., & Kim, S. (2011) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2011.2107518 · Cited by 14
Cited by
Recent development of two-dimensional transition metal dichalcogenides and their applications
Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., & Lee, Y. H. (2017) · Materials Today · doi:10.1016/j.mattod.2016.10.002 · Cited by 2,769
Self-citationRecent Advances in Two-Dimensional Materials beyond Graphene
Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Self-citationPhotocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Recent Progress in Electronic Skin
Wang, X., Dong, L., Zhang, H., Yu, R., Pan, C., & Wang, Z. L. (2015) · Advanced Science · doi:10.1002/advs.201500169 · Cited by 976
Recent progress in 2D group-VA semiconductors: from theory to experiment
Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00125h · Cited by 850
Metadata
- Authors
- Akinwande, D., Petrone, N., & Hone, J.
- Venue
- Nature Communications
- Published
- 2014-12-17
- Volume
- 5
- Issue
- 1
- Pages
- 5678-5678
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2088034301
- Cited by
- 1,910
- References
- 80
- FWCI
- 58.07
- Type
- journal article
- Language
- en
- Open access
- bronze
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
