Emerging in‐plane anisotropic two‐dimensional materials

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374

Superior Thermal Conductivity of Single-Layer Graphene

Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008) · Nano Letters · doi:10.1021/nl0731872 · Cited by 13,823

Two-dimensional atomic crystals

Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788

A roadmap for graphene

Novoselov, K. S., Fal′ko, V. I., Colombo, L., Gellert, P. R., Schwab, M. G., & Kim, K. (2012) · Nature · doi:10.1038/nature11458 · Cited by 9,251

Black phosphorus field-effect transistors

Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.35 · Cited by 8,413

Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

Zhao, L.-D., Lo, S.-H., Zhang, Y., Sun, H., Tan, G., Uher, C., Wolverton, C., Dravid, V. P., & Kanatzidis, M. G. (2014) · Nature · doi:10.1038/nature13184 · Cited by 5,218

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

Qiao, J., Kong, X., Hu, Z.-X., Yang, F., & Ji, W. (2014) · Nature Communications · doi:10.1038/ncomms5475 · Cited by 4,442

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Koppens, F. H. L., Mueller, T., Avouris, P., Ferrari, A. C., Vitiello, M. S., & Polini, M. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.215 · Cited by 3,828

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

Mak, K. F., & Shan, J. (2016) · Nature Photonics · doi:10.1038/nphoton.2015.282 · Cited by 3,819

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

Xia, F., Wang, H., & Jia, Y. (2014) · Nature Communications · doi:10.1038/ncomms5458 · Cited by 3,516

Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage

Bonaccorso, F., Colombo, L., Yu, G., Stoller, M., Tozzini, V., Ferrari, A. C., Ruoff, R. S., & Pellegrini, V. (2015) · Science · doi:10.1126/science.1246501 · Cited by 3,454

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753

Physics of thin-film ferroelectric oxides

Dawber, M., Rabe, K. M., & Scott, J. F. (2005) · Reviews of Modern Physics · doi:10.1103/revmodphys.77.1083 · Cited by 2,296

Two-dimensional semiconductors for transistors

Chhowalla, M., Jena, D., & Zhang, H. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.52 · Cited by 1,663

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Long, M., Wang, P., Fang, H., & Hu, W. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201803807 · Cited by 1,598

The renaissance of black phosphorus

Ling, X., Wang, H., Huang, S., Xia, F., & Dresselhaus, M. S. (2015) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1416581112 · Cited by 1,470

Highly anisotropic and robust excitons in monolayer black phosphorus

Wang, X., Jones, A. M., Seyler, K. L., Tran, V., Jia, Y., Zhao, H., Wang, H., Yang, L., Xu, X., & Xia, F. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.71 · Cited by 1,450

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Ding, W., Zhu, J., Wang, Z., Gao, Y., Xiao, D., Gu, Y., Zhang, Z., & Zhu, W. (2017) · Nature Communications · doi:10.1038/ncomms14956 · Cited by 1,444

Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

Yuan, H., Liu, X., Afshinmanesh, F., Li, W., Xu, G., Sun, J., Lian, B., Curto, A. G., Ye, G., Hikita, Y., et al. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.112 · Cited by 1,353

Intrinsic Piezoelectricity in Two-Dimensional Materials

Duerloo, K.-A. N., Ong, M. T., & Reed, E. J. (2012) · The Journal of Physical Chemistry Letters · doi:10.1021/jz3012436 · Cited by 1,190

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

Duan, X., Wang, C., Pan, A., Yu, R., & Duan, X. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00507h · Cited by 1,161

Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

Tongay, S., Sahin, H., Ko, C., Luce, A., Fan, W., Liu, K., Zhou, J., Huang, Y.-S., Ho, C.-H., Yan, J., et al. (2014) · Nature Communications · doi:10.1038/ncomms4252 · Cited by 1,138

Observation of piezoelectricity in free-standing monolayer MoS2

Zhu, H., Wang, Y., Xiao, J., Liu, M., Xiong, S., Wong, Z. J., Ye, Z., Ye, Y., Yin, X., & Zhang, X. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2014.309 · Cited by 877

Recent progress in 2D group-VA semiconductors: from theory to experiment

Zhang, S., Guo, S., Chen, Z., Wang, Y., Gao, H., Gómez-Herrero, J., Ares, P., Zamora, F., Zhu, Z., & Zeng, H. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00125h · Cited by 850

Direct observation of the layer-dependent electronic structure in phosphorene

Li, L., Kim, J., Jin, C., Ye, G. J., Qiu, D. Y., da Jornada, F. H., Shi, Z., Chen, L., Zhang, Z., Yang, F., et al. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2016.171 · Cited by 835

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Guo, Q., Pospischil, A., Bhuiyan, M., Jiang, H., Tian, H., Farmer, D., Deng, B., Li, C., Han, S.-J., Wang, H., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01977 · Cited by 790

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics

Oyedele, A. D., Yang, S., Liang, L., Puretzky, A. A., Wang, K., Zhang, J., Yu, P., Pudasaini, P. R., Ghosh, A. W., Liu, Z., et al. (2017) · Journal of the American Chemical Society · doi:10.1021/jacs.7b04865 · Cited by 766

Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene

Fei, R., Faghaninia, A., Soklaski, R., Yan, J.-A., Lo, C., & Yang, L. (2014) · Nano Letters · doi:10.1021/nl502865s · Cited by 748

Measuring Thermal and Thermoelectric Properties of One-Dimensional Nanostructures Using a Microfabricated Device

Shi, L., Li, D., Yu, C., Jang, W., Kim, D., Yao, Z., Kim, P., & Majumdar, A. (2003) · Journal of Heat Transfer · doi:10.1115/1.1597619 · Cited by 733

Tunable optical properties of multilayer black phosphorus thin films

Low, T., Rodin, A. S., Carvalho, A., Jiang, Y., Wang, H., Xia, F., & Castro Neto, A. H. (2014) · Physical Review B · doi:10.1103/physrevb.90.075434 · Cited by 722

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie, C., Mak, C., Tao, X., & Yan, F. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201603886 · Cited by 705

Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

Fei, R., Li, W., Li, J., & Yang, L. (2015) · Applied Physics Letters · doi:10.1063/1.4934750 · Cited by 695

Symmetry breaking in molecular ferroelectrics

Shi, P.-P., Tang, Y.-Y., Li, P.-F., Liao, W.-Q., Wang, Z.-X., Ye, Q., & Xiong, R.-G. (2016) · Chemical Society Reviews · doi:10.1039/c5cs00308c · Cited by 693

High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

Zhao, Y., Qiao, J., Yu, Z., Yu, P., Xu, K., Lau, S. P., Zhou, W., Liu, Z., Wang, X., Ji, W., et al. (2017) · Advanced Materials · doi:10.1002/adma.201604230 · Cited by 686

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides

Fei, R., Kang, W., & Yang, L. (2016) · Physical Review Letters · doi:10.1103/physrevlett.117.097601 · Cited by 673

Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

Fei, R., Li, W., Li, J., & Yang, L. (2015) · DSpace@MIT (Massachusetts Institute of Technology) · Cited by 670

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus

Luo, Z., Maassen, J., Deng, Y., Du, Y., Garrelts, R. P., Lundstrom, M. S., Ye, P. D., & Xu, X. (2015) · Nature Communications · doi:10.1038/ncomms9572 · Cited by 662

Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues

Wu, M., & Zeng, X. C. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b00726 · Cited by 656

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

Liu, E., Fu, Y., Wang, Y., Feng, Y., Liu, H., Wan, X., Zhou, W., Wang, B., Shao, L., Ho, C.-H., et al. (2015) · Nature Communications · doi:10.1038/ncomms7991 · Cited by 636

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

Long, M., Gao, A., Wang, P., Xia, H., Ott, C., Pan, C., Fu, Y., Liu, E., Chen, X., Lu, W., et al. (2017) · Science Advances · doi:10.1126/sciadv.1700589 · Cited by 598

Strongly anisotropic in-plane thermal transport in single-layer black phosphorene

Jain, A., & McGaughey, A. J. H. (2015) · Scientific Reports · doi:10.1038/srep08501 · Cited by 549

Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2

Liu, F., Zheng, S., He, X., Chaturvedi, A., He, J., Chow, W. L., Mion, T. R., Wang, X., Zhou, J., Fu, Q., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201504546 · Cited by 536

Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain

Song, S., Keum, D. H., Cho, S., Perello, D., Kim, Y., & Lee, Y. H. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b03481 · Cited by 530

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

Guo, R., Wang, X., Kuang, Y., & Huang, B. (2015) · Physical Review B · doi:10.1103/physrevb.92.115202 · Cited by 527

In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

Chenet, D. A., Aslan, B., Huang, P. Y., Fan, C., van der Zande, A. M., Heinz, T. F., & Hone, J. C. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00910 · Cited by 515

Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

Vidal, J., Lany, S., d’Avezac, M., Zunger, A., Zakutayev, A., Francis, J., & Tate, J. (2012) · Applied Physics Letters · doi:10.1063/1.3675880 · Cited by 477

Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

Guo, Y., Zhou, S., Bai, Y., & Zhao, J. (2017) · Applied Physics Letters · doi:10.1063/1.4981877 · Cited by 440

Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium Selenide

Wang, X., Li, Y., Huang, L., Jiang, X.-W., Jiang, L., Dong, H., Wei, Z., Li, J., & Hu, W. (2017) · Journal of the American Chemical Society · doi:10.1021/jacs.7b06314 · Cited by 431

Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus

Ling, X., Huang, S., Hasdeo, E. H., Liang, L., Parkin, W. M., Tatsumi, Y., Nugraha, A. R. T., Puretzky, A. A., Das, P. M., Sumpter, B. G., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b04540 · Cited by 421

Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K

Lee, S., Yang, F., Suh, J., Yang, S., Lee, Y., Li, G., Sung Choe, H., Suslu, A., Chen, Y., Ko, C., et al. (2015) · Nature Communications · doi:10.1038/ncomms9573 · Cited by 385

Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets

Zhang, E., Wang, P., Li, Z., Wang, H., Song, C., Huang, C., Chen, Z.-G., Yang, L., Zhang, K., Lu, S., et al. (2016) · ACS Nano · doi:10.1021/acsnano.6b04165 · Cited by 384

Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor

Wolverson, D., Crampin, S., Kazemi, A. S., Ilie, A., & Bending, S. J. (2014) · ACS Nano · doi:10.1021/nn5053926 · Cited by 372

High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes

Liu, F., Shimotani, H., Shang, H., Kanagasekaran, T., Zólyomi, V., Drummond, N., Fal’ko, V. I., & Tanigaki, K. (2014) · ACS Nano · doi:10.1021/nn4054039 · Cited by 367

Unusual Angular Dependence of the Raman Response in Black Phosphorus

Ribeiro, H. B., Pimenta, M. A., de Matos, C. J. S., Moreira, R. L., Rodin, A. S., Zapata, J. D., de Souza, E. A. T., & Castro Neto, A. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b00698 · Cited by 366

A brief introduction to the fabrication and synthesis of graphene based composites for the realization of electromagnetic absorbing materials

Lv, H., Guo, Y., Yang, Z., Cheng, Y., Wang, L. P., Zhang, B., Zhao, Y., Xu, Z. J., & Ji, G. (2017) · Journal of Materials Chemistry C · doi:10.1039/c6tc03026b · Cited by 358

Polarization and Thickness Dependent Absorption Properties of Black Phosphorus: New Saturable Absorber for Ultrafast Pulse Generation

Li, D., Jussila, H., Karvonen, L., Ye, G., Lipsanen, H., Chen, X., & Sun, Z. (2015) · Scientific Reports · doi:10.1038/srep15899 · Cited by 355

Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications

Tian, H., Guo, Q., Xie, Y., Zhao, H., Li, C., Cha, J. J., Xia, F., & Wang, H. (2016) · Advanced Materials · doi:10.1002/adma.201600166 · Cited by 345

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Gong, C., Zhang, Y., Chen, W., Chu, J., Lei, T., Pu, J., Dai, L., Wu, C., Cheng, Y., Zhai, T., et al. (2017) · Advanced Science · doi:10.1002/advs.201700231 · Cited by 340

Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy

Tian, Z., Guo, C., Zhao, M., Li, R., & Xue, J. (2017) · ACS Nano · doi:10.1021/acsnano.6b08704 · Cited by 328

Observation of Fermi arcs in the type-II Weyl semimetal candidateWTe2

Wu, Y., Mou, D., Jo, N. H., Sun, K., Huang, L., Bud'ko, S. L., Canfield, P. C., & Kaminski, A. (2016) · Physical Review B · doi:10.1103/physrevb.94.121113 · Cited by 326

Infrared fingerprints of few-layer black phosphorus

Zhang, G., Huang, S., Chaves, A., Song, C., Özçelik, V. O., Low, T., & Yan, H. (2017) · Nature Communications · doi:10.1038/ncomms14071 · Cited by 321

Mechanical and Electrical Anisotropy of Few-Layer Black Phosphorus

Tao, J., Shen, W., Wu, S., Liu, L., Feng, Z., Wang, C., Hu, C., Yao, P., Zhang, H., Pang, W., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05151 · Cited by 315

2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy

Li, L., Wang, W., Gong, P., Zhu, X., Deng, B., Shi, X., Gao, G., Li, H., & Zhai, T. (2018) · Advanced Materials · doi:10.1002/adma.201706771 · Cited by 313

Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct‐Gap Semiconductor with High and Anisotropic Carrier Mobility

Dai, J., & Zeng, X. C. (2015) · Angewandte Chemie International Edition · doi:10.1002/anie.201502107 · Cited by 296

Linearly Polarized Excitons in Single- and Few-Layer ReS2 Crystals

Aslan, B., Chenet, D. A., van der Zande, A. M., Hone, J. C., & Heinz, T. F. (2016) · ACS Photonics · doi:10.1021/acsphotonics.5b00486 · Cited by 283

Diverse anisotropy of phonon transport in two-dimensional group IV–VI compounds: A comparative study

Qin, G., Qin, Z., Fang, W.-Z., Zhang, L.-C., Yue, S.-Y., Yan, Q.-B., Hu, M., & Su, G. (2016) · Nanoscale · doi:10.1039/c6nr01349j · Cited by 281

Piezoelectricity in two-dimensional group-III monochalcogenides

Li, W., & Li, J. (2015) · Nano Research · doi:10.1007/s12274-015-0878-8 · Cited by 269

Measurement of the anisotropic thermal conductivity of molybdenum disulfide by the time-resolved magneto-optic Kerr effect

Liu, J., Choi, G.-M., & Cahill, D. G. (2014) · Journal of Applied Physics · doi:10.1063/1.4904513 · Cited by 262

Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus

Jang, H., Wood, J. D., Ryder, C. R., Hersam, M. C., & Cahill, D. G. (2015) · Advanced Materials · doi:10.1002/adma.201503466 · Cited by 259

Chemical Vapor Deposition Synthesis of Ultrathin Hexagonal ReSe2 Flakes for Anisotropic Raman Property and Optoelectronic Application

Hafeez, M., Gan, L., Li, H., Ma, Y., & Zhai, T. (2016) · Advanced Materials · doi:10.1002/adma.201601977 · Cited by 256

Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs

Zhou, Z., Long, M., Pan, L., Wang, X., Zhong, M., Blei, M., Wang, J., Fang, J., Tongay, S., Hu, W., et al. (2018) · ACS Nano · doi:10.1021/acsnano.8b06629 · Cited by 249

Controlled synthesis of single-crystal SnSe nanoplates

Zhao, S., Wang, H., Zhou, Y., Liao, L., Jiang, Y., Yang, X., Chen, G., Lin, M., Wang, Y., Peng, H., et al. (2015) · Nano Research · doi:10.1007/s12274-014-0676-8 · Cited by 246

High-Yield Exfoliation of Ultrathin Two-Dimensional Ternary Chalcogenide Nanosheets for Highly Sensitive and Selective Fluorescence DNA Sensors

Tan, C., Yu, P., Hu, Y., Chen, J., Huang, Y., Cai, Y., Luo, Z., Li, B., Lu, Q., Wang, L., et al. (2015) · Journal of the American Chemical Society · doi:10.1021/jacs.5b06982 · Cited by 240

Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy

Chen, Y., Chen, C., Kealhofer, R., Liu, H., Yuan, Z., Jiang, L., Suh, J., Park, J., Ko, C., Choe, H. S., et al. (2018) · Advanced Materials · doi:10.1002/adma.201800754 · Cited by 240

Large‐Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors

Hafeez, M., Gan, L., Li, H., Ma, Y., & Zhai, T. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201601019 · Cited by 236

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Zhou, X., Zhang, Q., Gan, L., Li, H., Xiong, J., & Zhai, T. (2016) · Advanced Science · doi:10.1002/advs.201600177 · Cited by 224

Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application

Shim, J., Park, H., Kang, D., Kim, J., Jo, S., Park, Y., & Park, J. (2017) · Advanced Electronic Materials · doi:10.1002/aelm.201600364 · Cited by 223

Highly In‐Plane Anisotropic 2D GeAs2 for Polarization‐Sensitive Photodetection

Li, L., Gong, P., Sheng, D., Wang, S., Wang, W., Zhu, X., Shi, X., Wang, F., Han, W., Yang, S., et al. (2018) · Advanced Materials · doi:10.1002/adma.201804541 · Cited by 220

TiS3 Transistors with Tailored Morphology and Electrical Properties

Island, J. O., Barawi, M., Biele, R., Almazán, A., Clamagirand, J. M., Ares, J. R., Sánchez, C., van der Zant, H. S. J., Álvarez, J. V., D'Agosta, R., et al. (2015) · Advanced Materials · doi:10.1002/adma.201405632 · Cited by 219

Ultrahigh Photoresponse of Few‐Layer TiS3 Nanoribbon Transistors

Island, J. O., Buscema, M., Barawi, M., Clamagirand, J. M., Ares, J. R., Sánchez, C., Ferrer, I. J., Steele, G. A., van der Zant, H. S. J., & Castellanos‐Gomez, A. (2014) · Advanced Optical Materials · doi:10.1002/adom.201400043 · Cited by 204

Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering

Beams, R., Cançado, L. G., Krylyuk, S., Kalish, I., Kalanyan, B., Singh, A. K., Choudhary, K., Bruma, A., Vora, P. M., Tavazza, F., et al. (2016) · ACS Nano · doi:10.1021/acsnano.6b05127 · Cited by 204

Piezoelectricity in ZnO nanowires: A first-principles study

Xiang, H. J., Yang, J., Hou, J. G., & Zhu, Q. (2006) · Applied Physics Letters · doi:10.1063/1.2397013 · Cited by 200

Tellurium‐Assisted Epitaxial Growth of Large‐Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

Cui, F., Wang, C., Li, X., Wang, G., Liu, K., Yang, Z., Feng, Q., Liang, X., Zhang, Z., Liu, S., et al. (2016) · Advanced Materials · doi:10.1002/adma.201600722 · Cited by 198

Role of Ga Vacancy on a Multilayer GaTe Phototransistor

Wang, Z., Xu, K., Li, Y., Zhan, X., Safdar, M., Wang, Q., Wang, F., & He, J. (2014) · ACS Nano · doi:10.1021/nn500782n · Cited by 193

Determination of layer-dependent exciton binding energies in few-layer black phosphorus

Zhang, G., Chaves, A., Huang, S., Wang, F., Xing, Q., Low, T., & Yan, H. (2018) · Science Advances · doi:10.1126/sciadv.aap9977 · Cited by 181

Selenium‐Doped Black Phosphorus for High‐Responsivity 2D Photodetectors

Xu, Y., Yuan, J., Fei, L., Wang, X., Bao, Q., Wang, Y., Zhang, K., & Zhang, Y. (2016) · Small · doi:10.1002/smll.201600692 · Cited by 178

Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap

Hu, P., Zhang, J., Yoon, M., Qiao, X.-F., Zhang, X., Feng, W., Tan, P., Zheng, W., Liu, J., Wang, X., et al. (2014) · Nano Research · doi:10.1007/s12274-014-0430-2 · Cited by 174

Transport evidence for the three-dimensional Dirac semimetal phase inZrTe5

Zheng, G., Lu, J., Zhu, X., Ning, W., Han, Y., Zhang, H., Zhang, J., Xi, C., Yang, J., Du, H., et al. (2016) · Physical Review B · doi:10.1103/physrevb.93.115414 · Cited by 174

Anisotropic optical and electronic properties of two-dimensional layered germanium sulfide

Tan, D., Lim, H. E., Wang, F., Mohamed, N. B., Mouri, S., Zhang, W., Miyauchi, Y., Ohfuchi, M., & Matsuda, K. (2017) · Nano Research · doi:10.1007/s12274-016-1312-6 · Cited by 172

Ternary Ta2NiSe5 Flakes for a High‐Performance Infrared Photodetector

Li, L., Wang, W., Gan, L., Zhou, N., Zhu, X., Zhang, Q., Li, H., Tian, M., & Zhai, T. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201603804 · Cited by 161

Broadband Anisotropic Photoresponse of the “Hydrogen Atom” Version Type-II Weyl Semimetal Candidate TaIrTe4

Lai, J., Liu, Y., Ma, J., Zhuo, X., Peng, Y., Lu, W., Liu, Z., Chen, J., & Sun, D. (2018) · ACS Nano · doi:10.1021/acsnano.8b01897 · Cited by 159

Spin-Orbit Splitting in Single-Layer MoS2 Revealed by Triply Resonant Raman Scattering

Sun, L., Yan, J., Zhan, D., Liu, L., Hu, H., Li, H., Tay, B. K., Kuo, J., Huang, C., Hewak, D. W., et al. (2013) · Physical Review Letters · doi:10.1103/physrevlett.111.126801 · Cited by 154

Strategies on Phase Control in Transition Metal Dichalcogenides

Wang, R., Yu, Y., Zhou, S., Li, H., Wong, H., Luo, Z., Gan, L., & Zhai, T. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201802473 · Cited by 154

Low-symmetry two-dimensional materials for electronic and photonic applications

Tian, H., Tice, J., Fei, R., Tran, V., Yan, X., Yang, L., & Wang, H. (2016) · Nano Today · doi:10.1016/j.nantod.2016.10.003 · Cited by 152

The In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy

Song, Q., Pan, X., Wang, H., Zhang, K., Tan, Q., Li, P., Wan, Y., Wang, Y., Xu, X., Lin, M., et al. (2016) · Scientific Reports · doi:10.1038/srep29254 · Cited by 151

Enhanced Raman Scattering on In-Plane Anisotropic Layered Materials

Lin, J., Liang, L., Ling, X., Zhang, S., Mao, N., Zhang, N., Sumpter, B. G., Meunier, V., Tong, L., & Zhang, J. (2015) · Journal of the American Chemical Society · doi:10.1021/jacs.5b10144 · Cited by 148

Distinctive in-Plane Cleavage Behaviors of Two-Dimensional Layered Materials

Guo, Y., Liu, C., Yin, Q., Wei, C., Lin, S., Hoffman, T. B., Zhao, Y., Edgar, J. H., Chen, Q., Lau, S. P., et al. (2016) · ACS Nano · doi:10.1021/acsnano.6b05063 · Cited by 138

Synthesis of Large‐Size 1T′ ReS 2 x Se 2(1− x ) Alloy Monolayer with Tunable Bandgap and Carrier Type

Cui, F., Feng, Q., Hong, J., Wang, R., Bai, Y., Li, X., Liu, D., Zhou, Y., Liang, X., He, X., et al. (2017) · Advanced Materials · doi:10.1002/adma.201705015 · Cited by 136

Activation of New Raman Modes by Inversion Symmetry Breaking in Type II Weyl Semimetal Candidate T′-MoTe2

Chen, S., Goldstein, T., Venkataraman, D., Ramasubramaniam, A., & Yan, J. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02666 · Cited by 129

High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe 2

Mleczko, M. J., Xu, R. L., Okabe, K. L., Kuo, H.-H., Fisher, I. R., Wong, H. ‐. P., Nishi, Y., & Pop, E. (2016) · ACS Nano · doi:10.1021/acsnano.6b02368 · Cited by 127

Emergent elemental two-dimensional materials beyond graphene

Zhang, Y., Rubio, Á., & LAY, G. L. (2017) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/aa4e8b · Cited by 127

Titanium Trisulfide Monolayer as a Potential Thermoelectric Material: A First-Principles-Based Boltzmann Transport Study

Zhang, J., Liu, X., Wen, Y., Shi, L., Chen, R., Liu, H., & Shan, B. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b14134 · Cited by 125

Toward Sensitive Room‐Temperature Broadband Detection from Infrared to Terahertz with Antenna‐Integrated Black Phosphorus Photoconductor

Wang, L., Liu, C., Chen, X., Zhou, J., Hu, W., Wang, X., Li, J., Tang, W., Yu, A., Wang, S., et al. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604414 · Cited by 122

Temperature Dependence of Anisotropic Thermal‐Conductivity Tensor of Bulk Black Phosphorus

Sun, B., Gu, X., Zeng, Q., Huang, X., Yan, Y., Liu, Z., Yang, R., & Koh, Y. K. (2016) · Advanced Materials · doi:10.1002/adma.201603297 · Cited by 120

Direct Synthesis of Large‐Scale WTe2 Thin Films with Low Thermal Conductivity

Zhou, Y., Jang, H., Woods, J. M., Xie, Y., Kumaravadivel, P., Pan, G. A., Liu, J., Liu, Y., Cahill, D. G., & Cha, J. J. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201605928 · Cited by 119

Temperature and Thickness Dependences of the Anisotropic In‐Plane Thermal Conductivity of Black Phosphorus

Smith, B., Vermeersch, B., Carrete, J., Ou, E., Kim, J., Mingo, N., Akinwande, D., & Shi, L. (2016) · Advanced Materials · doi:10.1002/adma.201603756 · Cited by 117

Revealing the Origins of 3D Anisotropic Thermal Conductivities of Black Phosphorus

Zhu, J., Park, H., Chen, J., Gu, X., Zhang, H., Karthikeyan, S., Wendel, N., Campbell, S. A., Dawber, M., Du, X., et al. (2016) · Advanced Electronic Materials · doi:10.1002/aelm.201600040 · Cited by 108

3D Anisotropic Thermal Conductivity of Exfoliated Rhenium Disulfide

Jang, H., Ryder, C. R., Wood, J. D., Hersam, M. C., & Cahill, D. G. (2017) · Advanced Materials · doi:10.1002/adma.201700650 · Cited by 106

Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5

Qiu, G., Du, Y., Charnas, A. R., Zhou, H. Y., Jin, S., Luo, Z., Zemlyanov, D. Y., Xu, X., Cheng, G. J., & Ye, P. D. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02629 · Cited by 104

GeAs2: A IV–V Group Two-Dimensional Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Zhao, T., Sun, Y., Shuai, Z., & Wang, D. (2017) · Chemistry of Materials · doi:10.1021/acs.chemmater.7b01343 · Cited by 100

Ternary Chalcogenide Nanosheets with Ultrahigh Photothermal Conversion Efficiency for Photoacoustic Theranostics

Zhu, H., Lai, Z., Fang, Y., Xu, Z. J., Tan, C., Qi, X., Ding, D., Chen, P., Zhang, H., & Pu, K. (2017) · Small · doi:10.1002/smll.201604139 · Cited by 97

In-Plane Optical Anisotropy and Linear Dichroism in Low-Symmetry Layered TlSe

Yang, S., Hu, C., Wu, M., Shen, W., Tongay, S., Wu, K., Wei, B., Sun, Z., Jiang, C., Huang, L., et al. (2018) · ACS Nano · doi:10.1021/acsnano.8b05162 · Cited by 92

GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

Zhou, L., Guo, Y. Y., & Zhao, J. (2017) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2017.08.016 · Cited by 89

Raman Signatures of Broken Inversion Symmetry and In‐Plane Anisotropy in Type‐II Weyl Semimetal Candidate TaIrTe4

Liu, Y., Gu, Q., Yu, P., Qi, S., Zhang, N., Zhang, Y., Ma, X., Zhu, R., Tong, L., Feng, J., et al. (2018) · Advanced Materials · doi:10.1002/adma.201706402 · Cited by 85

Review of microfluidic approaches for surface-enhanced Raman scattering

Zhou, Q.-T., & Kim, T. (2016) · Sensors and Actuators B Chemical · doi:10.1016/j.snb.2015.12.069 · Cited by 84

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates

Dathbun, A., Kim, Y., Kim, S., et al. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b00315 · Cited by 81

Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits

Liu, Y., & Ang, K. (2017) · ACS Nano · doi:10.1021/acsnano.7b03703 · Cited by 76

Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets

Kong, W., Bacaksız, C., Chen, B., et al. (2017) · Nanoscale · doi:10.1039/c7nr00711f · Cited by 75

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Cai, H., Chen, B., Wang, G., Soignard, E., Khosravi, A., Manca, M., Marie, X., Chang, S. L. Y., Urbaszek, B., & Tongay, S. (2016) · Advanced Materials · doi:10.1002/adma.201605551 · Cited by 72

Highly sensitive detection of polarized light using a new group IV–V 2D orthorhombic SiP

Li, C., Wang, S., Li, C., Yu, T., Jia, N., Qiao, J., Zhu, M. H., Liu, D., & Tao, X. (2018) · Journal of Materials Chemistry C · doi:10.1039/c8tc02037j · Cited by 60

First-principles study of lattice thermal conductivity of Td–WTe2

Liu, G., Sun, H. Y., Zhou, J., Li, Q. F., & Wan, X.-G. (2016) · New Journal of Physics · doi:10.1088/1367-2630/18/3/033017 · Cited by 51

Concurrent Synthesis of High‐Performance Monolayer Transition Metal Disulfides

Sun, L., Leong, W. S., Yang, S., Chisholm, M. F., Liang, S., Ang, L. K., Tang, Y., Mao, Y., Kong, J., & Yang, H. Y. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201605896 · Cited by 49

Single‐Layer Ternary Chalcogenide Nanosheet as a Fluorescence‐Based “Capture‐Release” Biomolecular Nanosensor

Kenry, K., Geldert, A., Lai, Z., Huang, Y., Yu, P., Tan, C., Liu, Z., Zhang, H., & Lim, C. T. (2016) · Small · doi:10.1002/smll.201601925 · Cited by 41

High Anisotropy in Tubular Layered Exfoliated KP15

Tian, N., Yang, Y., Liu, D., Liu, X., Tan, P., Zhang, D., Chang, K., Li, H., Zhao, M., Li, J. R., et al. (2018) · ACS Nano · doi:10.1021/acsnano.7b08368 · Cited by 35

New properties with old materials: Layered black phosphorous

Niu, T. (2016) · Nano Today · doi:10.1016/j.nantod.2016.08.013 · Cited by 22

Thermal conductivity of a single Bi0.5Sb1.5Te3single-crystalline nanowire

Li, L., Jin, C., Xu, S., et al. (2014) · Nanotechnology · doi:10.1088/0957-4484/25/41/415704 · Cited by 12