The DOI matches its Crossref record; 158 of the 158 references it cites were found in a registry or an index.
Two-dimensional transistors beyond graphene and TMDCs
Abstract
We present an overview of the recent advances in two-dimensional transistors beyond graphene and transition metal dichalcogenides.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Physics of Semiconductor Devices
(2002) · Kluwer Academic Publishers eBooks · doi:10.1007/b117561 · Cited by 13,963
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Black phosphorus field-effect transistors
Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.35 · Cited by 8,413
Roll-to-roll production of 30-inch graphene films for transparent electrodes
Bae, S., Kim, H., Lee, Y., Xu, X., Park, J.-S., Zheng, Y., Balakrishnan, J., Lei, T., Ri Kim, H., Song, Y. I., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.132 · Cited by 8,136
2D materials and van der Waals heterostructures
Novoselov, K. S., Mishchenko, A., Carvalho, A., & Castro Neto, A. H. (2016) · Science · doi:10.1126/science.aac9439 · Cited by 7,434
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Liu, H., Neal, A. T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn501226z · Cited by 6,480
Schwierz, F. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.89 · Cited by 5,267
Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals
Zhao, L.-D., Lo, S.-H., Zhang, Y., Sun, H., Tan, G., Uher, C., Wolverton, C., Dravid, V. P., & Kanatzidis, M. G. (2014) · Nature · doi:10.1038/nature13184 · Cited by 5,218
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
Tan, C., Cao, X., Wu, X.-J., He, Q., Yang, J., Zhang, X., Chen, J., Zhao, W., Han, S., Nam, G.-H., et al. (2017) · Chemical Reviews · doi:10.1021/acs.chemrev.6b00558 · Cited by 5,100
Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
Li, X., Wang, X., Zhang, L., Lee, S., & Dai, H. (2008) · Science · doi:10.1126/science.1150878 · Cited by 4,790
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
Qiao, J., Kong, X., Hu, Z.-X., Yang, F., & Ji, W. (2014) · Nature Communications · doi:10.1038/ncomms5475 · Cited by 4,442
Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon
Vogt, P., De Padova, P., Quaresima, C., Avila, J., Frantzeskakis, E., Asensio, M. C., Resta, A., Ealet, B., & Le Lay, G. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.155501 · Cited by 3,903
Liquid Exfoliation of Layered Materials
Nicolosi, V., Chhowalla, M., Kanatzidis, M. G., Strano, M. S., & Coleman, J. N. (2013) · Science · doi:10.1126/science.1226419 · Cited by 3,796
Direct observation of a widely tunable bandgap in bilayer graphene
Zhang, Y., Tang, T.-T., Girit, C., Hao, Z., Martin, M. C., Zettl, A., Crommie, M. F., Shen, Y. R., & Wang, F. (2009) · Nature · doi:10.1038/nature08105 · Cited by 3,669
Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
Chen, Y. L., Analytis, J. G., Chu, J.-H., Liu, Z. K., Mo, S.-K., Qi, X. L., Zhang, H. J., Lu, D. H., Dai, X., Fang, Z., et al. (2009) · Science · doi:10.1126/science.1173034 · Cited by 3,585
Xia, F., Wang, H., & Jia, Y. (2014) · Nature Communications · doi:10.1038/ncomms5458 · Cited by 3,516
Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium
Cahangirov, S., Topsakal, M., Aktürk, E., Şahin, H., & Ciraci, S. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.236804 · Cited by 3,366
Electronics based on two-dimensional materials
Fiori, G., Bonaccorso, F., Iannaccone, G., Palacios, T., Neumaier, D., Seabaugh, A., Banerjee, S. K., & Colombo, L. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.207 · Cited by 3,176
One-Dimensional Electrical Contact to a Two-Dimensional Material
Wang, L., Meric, I., Huang, P. Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L. M., Muller, D. A., et al. (2013) · Science · doi:10.1126/science.1244358 · Cited by 3,042
Van der Waals heterostructures and devices
Liu, Y., Weiss, N. O., Duan, X., Cheng, H.-C., Huang, Y., & Duan, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.42 · Cited by 2,793
Self-citation100-GHz Transistors from Wafer-Scale Epitaxial Graphene
Lin, Y.-M., Dimitrakopoulos, C., Jenkins, K. A., Farmer, D. B., Chiu, H.-Y., Grill, A., & Avouris, P. (2010) · Science · doi:10.1126/science.1184289 · Cited by 2,514
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
The chips are down for Moore’s law
Waldrop, M. M. (2016) · Nature · doi:10.1038/530144a · Cited by 2,397
Surface States and Rectification at a Metal Semi-Conductor Contact
Bardeen, J. (1947) · Physical Review · doi:10.1103/physrev.71.717 · Cited by 2,188
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
Liu, Y., Guo, J., Zhu, E., Liao, L., Lee, S.-J., Ding, M., Shakir, I., Gambin, V., Huang, Y., & Duan, X. (2018) · Nature · doi:10.1038/s41586-018-0129-8 · Cited by 2,132
Self-citationEvolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Zhao, W., Ghorannevis, Z., Chu, L., Toh, M., Kloc, C., Tan, P.-H., & Eda, G. (2013) · ACS Nano · doi:10.1021/nn305275h · Cited by 2,122
Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe
Zhao, L.-D., Tan, G., Hao, S., He, J., Pei, Y., Chi, H., Wang, H., Gong, S., Xu, H., Dravid, V. P., et al. (2016) · Science · doi:10.1126/science.aad3749 · Cited by 2,037
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Electrical contacts to two-dimensional semiconductors
Allain, A., Kang, J., Banerjee, K., & Kis, A. (2015) · Nature Materials · doi:10.1038/nmat4452 · Cited by 1,859
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Kappera, R., Voiry, D., Yalcin, S. E., Branch, B., Gupta, G., Mohite, A. D., & Chhowalla, M. (2014) · Nature Materials · doi:10.1038/nmat4080 · Cited by 1,847
Epitaxial growth of two-dimensional stanene
Zhu, F.-F., Chen, W.-J., Xu, Y., Gao, C.-L., Guan, D.-D., Liu, C.-H., Qian, D., Zhang, S.-C., & Jia, J.-F. (2015) · Nature Materials · doi:10.1038/nmat4384 · Cited by 1,793
Integrated Circuits Based on Bilayer MoS2 Transistors
Wang, H., Yu, L., Lee, Y.-H., Shi, Y., Hsu, A., Chin, M. L., Li, L.-J., Dubey, M., Kong, J., & Palacios, T. (2012) · Nano Letters · doi:10.1021/nl302015v · Cited by 1,738
Nanometre-scale electronics with III–V compound semiconductors
del Alamo, J. A. (2011) · Nature · doi:10.1038/nature10677 · Cited by 1,678
Li, H., Wu, J., Yin, Z., & Zhang, H. (2014) · Accounts of Chemical Research · doi:10.1021/ar4002312 · Cited by 1,668
Two-dimensional semiconductors for transistors
Chhowalla, M., Jena, D., & Zhang, H. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.52 · Cited by 1,663
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
Ni, Z. H., Yu, T., Lu, Y. H., Wang, Y. Y., Feng, Y. P., & Shen, Z. X. (2008) · ACS Nano · doi:10.1021/nn800459e · Cited by 1,627
Two-dimensional transition metal dichalcogenide nanosheet-based composites
Tan, C., & Zhang, H. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00182f · Cited by 1,605
Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene
Dávila, M. E., Xian, L., Cahangirov, S., Rubio, A., & Le Lay, G. (2014) · New Journal of Physics · doi:10.1088/1367-2630/16/9/095002 · Cited by 1,601
MoS2transistors with 1-nanometer gate lengths
Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., et al. (2016) · Science · doi:10.1126/science.aah4698 · Cited by 1,511
The renaissance of black phosphorus
Ling, X., Wang, H., Huang, S., Xia, F., & Dresselhaus, M. S. (2015) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1416581112 · Cited by 1,470
Tunable Bandgap in Silicene and Germanene
Ni, Z., Liu, Q., Tang, K., Zheng, J., Zhou, J., Qin, R., Gao, Z., Yu, D., & Lu, J. (2012) · Nano Letters · doi:10.1021/nl203065e · Cited by 1,451
The physics and chemistry of the Schottky barrier height
Tung, R. T. (2014) · Applied Physics Reviews · doi:10.1063/1.4858400 · Cited by 1,410
Bai, J., Zhong, X., Jiang, S., Huang, Y., & Duan, X. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.8 · Cited by 1,378
Self-citationMulti-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Cui, X., Lee, G.-H., Kim, Y. D., Arefe, G., Huang, P. Y., Lee, C.-H., Chenet, D. A., Zhang, X., Wang, L., Ye, F., et al. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.70 · Cited by 1,354
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zólyomi, V., Morozov, S. V., Kumar, R. K., Gorbachev, R. V., Kudrynskyi, Z. R., Pezzini, S., et al. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2016.242 · Cited by 1,341
Integrated Circuits and Logic Operations Based on Single-Layer MoS2
Radisavljevic, B., Whitwick, M. B., & Kis, A. (2011) · ACS Nano · doi:10.1021/nn203715c · Cited by 1,338
High-speed graphene transistors with a self-aligned nanowire gate
Liao, L., Lin, Y.-C., Bao, M., Cheng, R., Bai, J., Liu, Y., Qu, Y., Wang, K. L., Huang, Y., & Duan, X. (2010) · Nature · doi:10.1038/nature09405 · Cited by 1,317
Self-citationElectrically tunable band gap in silicene
Drummond, N. D., Zólyomi, V., & Fal'ko, V. I. (2012) · Physical Review B · doi:10.1103/physrevb.85.075423 · Cited by 1,169
Theoretical possibility of stage corrugation in Si and Ge analogs of graphite
Takeda, K., & Shiraishi, K. (1994) · Physical Review B · doi:10.1103/physrevb.50.14916 · Cited by 1,086
Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
Ferain, I., Colinge, C. A., & Colinge, J.-P. (2011) · Nature · doi:10.1038/nature10676 · Cited by 1,026
Nanosheets of Oxides and Hydroxides: Ultimate 2D Charge‐Bearing Functional Crystallites
Ma, R., & Sasaki, T. (2010) · Advanced Materials · doi:10.1002/adma.201001722 · Cited by 1,010
Colinge, J.-P. (2004) · Solid-State Electronics · doi:10.1016/j.sse.2003.12.020 · Cited by 943
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
Hu, P., Wen, Z., Wang, L., Tan, P., & Xiao, K. (2012) · ACS Nano · doi:10.1021/nn300889c · Cited by 913
Scaling the Si MOSFET: from bulk to SOI to bulk
Yan, R.-H., Ourmazd, A., & Lee, K. F. (1992) · IEEE Transactions on Electron Devices · doi:10.1109/16.141237 · Cited by 910
Rise of silicene: A competitive 2D material
Zhao, J., Liu, H., Yu, Z., Quhe, R., Zhou, S., Wang, Y., Liu, C. C., Zhong, H., Han, N., Lu, J., et al. (2016) · Progress in Materials Science · doi:10.1016/j.pmatsci.2016.04.001 · Cited by 891
The origins and limits of metal–graphene junction resistance
Xia, F., Perebeinos, V., Lin, Y.-M., Wu, Y., & Avouris, P. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2011.6 · Cited by 832
Channel Length Scaling of MoS2 MOSFETs
Liu, H., Neal, A. T., & Ye, P. D. (2012) · ACS Nano · doi:10.1021/nn303513c · Cited by 816
TWO NEW MODIFICATIONS OF PHOSPHORUS.
Bridgman, P. W. (1914) · Journal of the American Chemical Society · doi:10.1021/ja02184a002 · Cited by 811
Negative poisson’s ratio in single-layer black phosphorus
Jiang, J.-W., & Park, H. S. (2014) · Nature Communications · doi:10.1038/ncomms5727 · Cited by 774
Chloride Molecular Doping Technique on 2D Materials: WS 2 and MoS 2
Yang, L., Majumdar, K., Liu, H., Du, Y., Wu, H., Hatzistergos, M., Hung, P. Y., Tieckelmann, R., Tsai, W., Hobbs, C., et al. (2014) · Nano Letters · doi:10.1021/nl502603d · Cited by 758
High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
Wu, J., Yuan, H., Meng, M., Chen, C., Sun, Y., Chen, Z., Dang, W., Tan, C., Liu, Y., Yin, J., et al. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.43 · Cited by 754
Self-citationTwo-dimensional materials and their prospects in transistor electronics
Schwierz, F., Pezoldt, J., & Granzner, R. (2015) · Nanoscale · doi:10.1039/c5nr01052g · Cited by 726
Black Phosphorus and its Composite for Lithium Rechargeable Batteries
Park, C. ‐., & Sohn, H. ‐. (2007) · Advanced Materials · doi:10.1002/adma.200602592 · Cited by 719
Refinement of the crystal structure of black phosphorus
Brown, A., & Rundqvist, S. (1965) · Acta Crystallographica · doi:10.1107/s0365110x65004140 · Cited by 715
Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen
Kiriya, D., Tosun, M., Zhao, P., Kang, J. S., & Javey, A. (2014) · Journal of the American Chemical Society · doi:10.1021/ja5033327 · Cited by 702
Wang, Y., Li, L., Yao, W., Song, S., Sun, J. T., Pan, J., Ren, X., Li, C., Okunishi, E., Wang, Y.-Q., et al. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00964 · Cited by 701
High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs
Zhao, Y., Qiao, J., Yu, Z., Yu, P., Xu, K., Lau, S. P., Zhou, W., Liu, Z., Wang, X., Ji, W., et al. (2017) · Advanced Materials · doi:10.1002/adma.201604230 · Cited by 686
Interface roughness scattering in GaAs/AlAs quantum wells
Sakaki, H., Noda, T., Hirakawa, K., Tanaka, M., & Matsusue, T. (1987) · Applied Physics Letters · doi:10.1063/1.98305 · Cited by 685
Field-Effect Transistors Built from All Two-Dimensional Material Components
Roy, T., Tosun, M., Kang, J. S., Sachid, A. B., Desai, S. B., Hettick, M., Hu, C. C., & Javey, A. (2014) · ACS Nano · doi:10.1021/nn501723y · Cited by 676
GaS and GaSe Ultrathin Layer Transistors
Late, D. J., Liu, B., Luo, J., Yan, A., Matte, H. S. S. R., Grayson, M., Rao, C. N. R., & Dravid, V. P. (2012) · Advanced Materials · doi:10.1002/adma.201201361 · Cited by 673
Continuous Germanene Layer on Al(111)
Derivaz, M., Dentel, D., Stephan, R., Hanf, M.-C., Mehdaoui, A., Sonnet, P., & Pirri, C. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00085 · Cited by 671
Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces
Lee, Y.-H., Yu, L., Wang, H., Fang, W., Ling, X., Shi, Y., Lin, C.-T., Huang, J.-K., Chang, M.-T., Chang, C.-S., et al. (2013) · Nano Letters · doi:10.1021/nl400687n · Cited by 671
Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
Lu, W., Nan, H., Hong, J., Chen, Y., Zhu, C., Liang, Z., Ma, X., Ni, Z., Jin, C., & Zhang, Z. (2014) · Nano Research · doi:10.1007/s12274-014-0446-7 · Cited by 665
Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
Yu, L., Lee, Y.-H., Ling, X., Santos, E. J. G., Shin, Y. C., Lin, Y., Dubey, M., Kaxiras, E., Kong, J., Wang, H., et al. (2014) · Nano Letters · doi:10.1021/nl404795z · Cited by 647
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors
Liu, E., Fu, Y., Wang, Y., Feng, Y., Liu, H., Wan, X., Zhou, W., Wang, B., Shao, L., Ho, C.-H., et al. (2015) · Nature Communications · doi:10.1038/ncomms7991 · Cited by 636
Self-citationExfoliated oxide nanosheets: new solution to nanoelectronics
Osada, M., & Sasaki, T. (2009) · Journal of Materials Chemistry · doi:10.1039/b820160a · Cited by 608
The Electrical Properties of Black Phosphorus
Keyes, R. W. (1953) · Physical Review · doi:10.1103/physrev.92.580 · Cited by 565
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
English, C. D., Shine, G., Dorgan, V. E., Saraswat, K. C., & Pop, E. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01309 · Cited by 554
Li, S.-L., Tsukagoshi, K., Orgiu, E., & Samorì, P. (2016) · Chemical Society Reviews · doi:10.1039/c5cs00517e · Cited by 549
Extraordinarily Strong Interlayer Interaction in 2D Layered PtS2
Zhao, Y., Qiao, J., Yu, P., Hu, Z., Lin, Z., Lau, S. P., Liu, Z., Ji, W., & Chai, Y. (2016) · Advanced Materials · doi:10.1002/adma.201504572 · Cited by 542
High-quality sandwiched black phosphorus heterostructure and its quantum oscillations
Chen, X., Wu, Y., Wu, Z., Han, Y., Xu, S., Wang, L., Ye, W., Han, T., He, Y., Cai, Y., et al. (2015) · Nature Communications · doi:10.1038/ncomms8315 · Cited by 520
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
Cheng, R., Jiang, S., Chen, Y., Liu, Y., Weiss, N., Cheng, H.-C., Wu, H., Huang, Y., & Duan, X. (2014) · Nature Communications · doi:10.1038/ncomms6143 · Cited by 513
Self-citationFeng, W., Zheng, W., Cao, W., & Hu, P. (2014) · Advanced Materials · doi:10.1002/adma.201402427 · Cited by 501
Chuang, H.-J., Tan, X., Ghimire, N. J., Perera, M. M., Chamlagain, B., Cheng, M. M.-C., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2014) · Nano Letters · doi:10.1021/nl501275p · Cited by 483
Gurarslan, A., Yu, Y., Su, L., Yu, Y., Suarez, F., Yao, S., Zhu, Y., Ozturk, M., Zhang, Y., & Cao, L. (2014) · ACS Nano · doi:10.1021/nn5057673 · Cited by 480
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides
Jin, Z., Li, X., Mullen, J. T., & Kim, K. W. (2014) · Physical Review B · doi:10.1103/physrevb.90.045422 · Cited by 453
Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs
Sucharitakul, S., Goble, N. J., Kumar, U. R., Sankar, R., Bogorad, Z. A., Chou, F.-C., Chen, Y.-T., & Gao, X. P. A. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00493 · Cited by 438
Quantum Hall effect in black phosphorus two-dimensional electron system
Li, L., Yang, F., Ye, G. J., Zhang, Z., Zhu, Z., Lou, W., Zhou, X., Li, L., Watanabe, K., Taniguchi, T., et al. (2016) · Nature Nanotechnology · doi:10.1038/nnano.2016.42 · Cited by 431
Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes
Liu, Y., Wu, H., Cheng, H.-C., Yang, S., Zhu, E., He, Q., Ding, M., Li, D., Guo, J., Weiss, N. O., et al. (2015) · Nano Letters · doi:10.1021/nl504957p · Cited by 431
Self-citationChuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Breakdown of High-Performance Monolayer MoS2 Transistors
Lembke, D., & Kis, A. (2012) · ACS Nano · doi:10.1021/nn303772b · Cited by 416
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
Ko, H., Takei, K., Kapadia, R., Chuang, S., Fang, H., Leu, P. W., Ganapathi, K., Plis, E., Kim, H. S., Chen, S.-Y., et al. (2010) · Nature · doi:10.1038/nature09541 · Cited by 415
Structural and Electronic Properties of Germanene onMoS2
Zhang, L., Bampoulis, P., Rudenko, A. N., Yao, Q., van Houselt, A., Poelsema, B., Katsnelson, M. I., & Zandvliet, H. J. W. (2016) · Physical Review Letters · doi:10.1103/physrevlett.116.256804 · Cited by 408
Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing
Mao, S., Chang, J., Pu, H., Lu, G., He, Q., Zhang, H., & Chen, J. (2017) · Chemical Society Reviews · doi:10.1039/c6cs00827e · Cited by 404
Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor
Wolverson, D., Crampin, S., Kazemi, A. S., Ilie, A., & Bending, S. J. (2014) · ACS Nano · doi:10.1021/nn5053926 · Cited by 372
High-frequency self-aligned graphene transistors with transferred gate stacks
Cheng, R., Bai, J., Liao, L., Zhou, H., Chen, Y., Liu, L., Lin, Y.-C., Jiang, S., Huang, Y., & Duan, X. (2012) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1205696109 · Cited by 369
Self-citationTwo‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface
Chiappe, D., Scalise, E., Cinquanta, E., Grazianetti, C., van den Broek, B., Fanciulli, M., Houssa, M., & Molle, A. (2014) · Advanced Materials · doi:10.1002/adma.201304783 · Cited by 364
Anisotropic Spin Transport and Strong Visible-Light Absorbance in Few-Layer SnSe and GeSe
Shi, G., & Kioupakis, E. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b02861 · Cited by 359
Efficient electrical control of thin-film black phosphorus bandgap
Deng, B., Tran, V., Xie, Y., Jiang, H., Li, C., Guo, Q., Wang, X., Tian, H., Koester, S. J., Wang, H., et al. (2017) · Nature Communications · doi:10.1038/ncomms14474 · Cited by 347
2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
Cao, W., Kang, J., Sarkar, D., Liu, W., & Banerjee, K. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2443039 · Cited by 344
Crystal Structures Adopted by Black Phosphorus at High Pressures
Jamieson, J. C. (1963) · Science · doi:10.1126/science.139.3561.1291 · Cited by 338
Black Phosphorus Radio-Frequency Transistors
Wang, H., Wang, X., Xia, F., Wang, L., Jiang, H., Xia, Q., Chin, M. L., Dubey, M., & Han, S.-J. (2014) · Nano Letters · doi:10.1021/nl5029717 · Cited by 330
Hydrogen compounds of group-IV nanosheets
Lew Yan Voon, L. C., Sandberg, E., Aga, R. S., & Farajian, A. A. (2010) · Applied Physics Letters · doi:10.1063/1.3495786 · Cited by 323
High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
Tosun, M., Chuang, S., Fang, H., Sachid, A. B., Hettick, M., Lin, Y., Zeng, Y., & Javey, A. (2014) · ACS Nano · doi:10.1021/nn5009929 · Cited by 322
Controlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals
Wu, J., Tan, C., Tan, Z., Liu, Y., Yin, J., Dang, W., Wang, M., & Peng, H. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b00335 · Cited by 312
Self-citationSeeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations
Han, G. H., Kybert, N. J., Naylor, C. H., Lee, B. S., Ping, J., Park, J. H., Kang, J., Lee, S. Y., Lee, Y. H., Agarwal, R., et al. (2015) · Nature Communications · doi:10.1038/ncomms7128 · Cited by 307
Kaasbjerg, K., Thygesen, K. S., & Jauho, A.-P. (2013) · Physical Review B · doi:10.1103/physrevb.87.235312 · Cited by 301
HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides
Mleczko, M. J., Zhang, C., Lee, H. R., Kuo, H.-H., Magyari-Köpe, B., Moore, R. G., Shen, Z.-X., Fisher, I. R., Nishi, Y., & Pop, E. (2017) · Science Advances · doi:10.1126/sciadv.1700481 · Cited by 297
Tunable and sizable band gap in silicene by surface adsorption
Quhe, R., Fei, R., Liu, Q., Zheng, J., Li, H., Xu, C., Ni, Z., Wang, Y., Yu, D., Gao, Z., et al. (2012) · Scientific Reports · doi:10.1038/srep00853 · Cited by 295
Hiramatsu, H., Yanagi, H., Kamiya, T., Ueda, K., Hirano, M., & Hosono, H. (2008) · Chemistry of Materials · doi:10.1021/cm702303r · Cited by 295
Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors
Xie, L., Liao, M., Wang, S., Yu, H., Du, L., Tang, J., Zhao, J., Zhang, J., Chen, P., Lu, X., et al. (2017) · Advanced Materials · doi:10.1002/adma.201702522 · Cited by 283
Zhao, Y., Xu, K., Pan, F., Zhou, C., Zhou, F., & Chai, Y. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201603484 · Cited by 274
High-Performance WSe2Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
Yu, L., Zubair, A., Santos, E. J. G., Zhang, X., Lin, Y. C., Zhang, Y., & Palacios, T. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00668 · Cited by 257
Controlled synthesis of single-crystal SnSe nanoplates
Zhao, S., Wang, H., Zhou, Y., Liao, L., Jiang, Y. Y., Yang, X., Chen, G., Lin, M., Wang, Y., Peng, H., et al. (2015) · Nano Research · doi:10.1007/s12274-014-0676-8 · Cited by 248
Optoelectronic devices based on two-dimensional transition metal dichalcogenides
Tian, H., Chin, M. L., Najmaei, S., Guo, Q., Xia, F., Wang, H., & Dubey, M. (2016) · Nano Research · doi:10.1007/s12274-016-1034-9 · Cited by 243
Raman and infrared reflection spectroscopy in black phosphorus
Sugai, S., & Shirotani, I. (1985) · Solid State Communications · doi:10.1016/0038-1098(85)90213-3 · Cited by 239
Can silicon behave like graphene? A first-principles study
Houssa, M., Pourtois, G., Afanas’ev, V. V., & Stesmans, A. (2010) · Applied Physics Letters · doi:10.1063/1.3489937 · Cited by 230
Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides
Zólyomi, V., Drummond, N. D., & Fal'ko, V. I. (2013) · Physical Review B · doi:10.1103/physrevb.87.195403 · Cited by 226
Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide
Jung, C. S., Shojaei, F., Park, K., Oh, J. Y., Im, H. S., Jang, D. M., Park, J., & Kang, H. S. (2015) · ACS Nano · doi:10.1021/acsnano.5b04876 · Cited by 225
Parallel Stitching of 2D Materials
Ling, X., Lin, Y., Ma, Q., Wang, Z., Song, Y., Yu, L., Huang, S., Fang, W., Zhang, X., Hsu, A. L., et al. (2016) · Advanced Materials · doi:10.1002/adma.201505070 · Cited by 224
Tunneling Transistors Based on Graphene and 2-D Crystals
Jena, D. (2013) · Proceedings of the IEEE · doi:10.1109/jproc.2013.2253435 · Cited by 223
Single-step deposition of high-mobility graphene at reduced temperatures
Boyd, D. A., Lin, W.-H., Hsu, C.-C., Teague, M. L., Chen, C.-C., Lo, Y.-Y., Chan, W.-Y., Su, W.-B., Cheng, T.-C., Chang, C.-S., et al. (2015) · Nature Communications · doi:10.1038/ncomms7620 · Cited by 223
Ultrasensitive Phototransistors Based on Few‐Layered HfS2
Xu, K., Wang, Z., Wang, F., Huang, Y., Wang, F., Yin, L., Jiang, C., & He, J. (2015) · Advanced Materials · doi:10.1002/adma.201503864 · Cited by 216
Self-citationBand structure and optical properties of black phosphorus
Asahina, H., & Morita, A. (1984) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/17/11/006 · Cited by 212
Carrier Type Control of WSe2 Field‐Effect Transistors by Thickness Modulation and MoO3 Layer Doping
Zhou, C., Zhao, Y., Raju, S., Wang, Y., Lin, Z., Chan, M., & Chai, Y. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600292 · Cited by 212
Low Resistance Metal Contacts to MoS2Devices with Nickel-Etched-Graphene Electrodes
Leong, W. S., Luo, X., Li, Y., Khoo, K. H., Quek, S. Y., & Thong, J. T. L. (2015) · ACS Nano · doi:10.1021/nn506567r · Cited by 209
Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime
Chang, H., Yogeesh, M. N., Ghosh, R., Rai, A., Sanne, A., Yang, S., Lu, N., Banerjee, S. K., & Akinwande, D. (2015) · Advanced Materials · doi:10.1002/adma.201504309 · Cited by 187
Anisotropic optical and electronic properties of two-dimensional layered germanium sulfide
Tan, D., Lim, H. E., Wang, F., Mohamed, N. B., Mouri, S., Zhang, W., Miyauchi, Y., Ohfuchi, M., & Matsuda, K. (2017) · Nano Research · doi:10.1007/s12274-016-1312-6 · Cited by 172
Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors
Ni, Z., Zhong, H., Jiang, X., Quhe, R., Luo, G., Wang, Y., Ye, M., Yang, J., Shi, J., & Lu, J. (2014) · Nanoscale · doi:10.1039/c4nr00028e · Cited by 170
High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide
Liu, X., Hu, J., Yue, C., Della Fera, N., Ling, Y., Mao, Z., & Wei, J. (2014) · ACS Nano · doi:10.1021/nn505253p · Cited by 166
Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors
Zhang, Z., Li, L., Horng, J., Wang, N. Z., Yang, F., Yu, Y., Zhang, Y., Chen, G., Watanabe, K., Taniguchi, T., et al. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b02624 · Cited by 165
Highly-anisotropic optical and electrical properties in layered SnSe
Yang, S., Liu, Y., Wu, M., Zhao, L., Lin, Z., Cheng, H., Wang, Y., Jiang, C., Wei, S., Huang, L., et al. (2017) · Nano Research · doi:10.1007/s12274-017-1712-2 · Cited by 165
Self-citationIntrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices
Smithe, K. K. H., English, C. D., Suryavanshi, S. V., & Pop, E. (2016) · 2D Materials · doi:10.1088/2053-1583/4/1/011009 · Cited by 162
Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition
Ye, G., Gong, Y., Lei, S., He, Y., Li, B., Zhang, X., Jin, Z., Dong, L., Lou, J., Vajtai, R., et al. (2017) · Nano Research · doi:10.1007/s12274-017-1436-3 · Cited by 161
Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors
Liu, Y., Guo, J., Wu, Y., Zhu, E., Weiss, N. O., He, Q., Wu, H., Cheng, H., Xu, Y., Shakir, I., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b02713 · Cited by 159
Self-citationRadio Frequency Transistors and Circuits Based on CVD MoS2
Sanne, A., Ghosh, R., Rai, A., Yogeesh, M. N., Shin, S. H., Sharma, A., Jarvis, K. A., Mathew, L., Rao, R. A., Akinwande, D., et al. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b01080 · Cited by 156
Two‐Dimensional Semiconductors: From Materials Preparation to Electronic Applications
Liu, B., Abbas, A. N., & Zhou, C. (2017) · Advanced Electronic Materials · doi:10.1002/aelm.201700045 · Cited by 143
Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies
Zhu, W., Park, S., Yogeesh, M. N., McNicholas, K. M., Bank, S. R., & Akinwande, D. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b04768 · Cited by 142
Chemistry: Principles and Reactions
Masterton, W. L., & Hurley, C. N. (1991) · Andalas University Repository (Andalas University) · Cited by 134
Emergent elemental two-dimensional materials beyond graphene
Zhang, Y., Rubio, Á., & LAY, G. L. (2017) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/aa4e8b · Cited by 127
Fischetti, M. V., O’Regan, T. P., Narayanan, S., Sachs, C., Jin, S., Kim, J., & Zhang, Y. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.902722 · Cited by 119
Jiao, Y., Zhou, L., Ma, F., Gao, G., Kou, L., Bell, J. M., Sanvito, S., & Du, A. (2016) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b12606 · Cited by 118
Wang, J., Li, S., Zou, X., Ho, J. C. Y., Liao, L., Xiao, X., Jiang, C., Hu, W., Wang, J., & Li, J. (2015) · Small · doi:10.1002/smll.201501260 · Cited by 106
Atomic and electronic structure of exfoliated black phosphorus
Wu, R. J., Topsakal, M., Low, T., Robbins, M. C., Haratipour, N., Jeong, J. S., Wentzcovitch, R. M. M., Koester, S. J., & Mkhoyan, K. A. (2015) · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · doi:10.1116/1.4926753 · Cited by 91
GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures
Zhou, L., Guo, Y. Y., & Zhao, J. (2017) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2017.08.016 · Cited by 89
Electron Counting and a Large Family of Two-Dimensional Semiconductors
Miao, M., Botana, J., Zurek, E., Hu, T., Liu, J., & Yang, W. (2016) · Chemistry of Materials · doi:10.1021/acs.chemmater.5b03557 · Cited by 58
Hu, Y. T., Chen, T., Wang, X., Ma, L., Chen, R., Zhu, H., Yuan, X. M., Yan, C., Zhu, G., Lv, H., et al. (2017) · Nano Research · doi:10.1007/s12274-017-1525-3 · Cited by 58
Preparation and Transport Properties of Bi2O2Se Single Crystals
Drašar, Č., Ruleová, P., Beneš, L., & Lošt̆ák, P. (2012) · Journal of Electronic Materials · doi:10.1007/s11664-012-2143-1 · Cited by 54
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Yuan, X., Tang, L., Wang, P., Chen, Z., Zou, Y., Su, X., Zhang, C., Liu, Y., Wang, W., Liu, C., et al. (2015) · Nano Research · doi:10.1007/s12274-015-0833-8 · Cited by 49
Self-citationBenjamin, S. L., de Groot, C. H., Gurnani, C., Hector, A. L., Huang, R., Ignatyev, K., Levason, W., Pearce, S. J., Thomas, F., & Reid, G. (2013) · Chemistry of Materials · doi:10.1021/cm402422e · Cited by 35
High‐Performance 2D p‐Type Transistors Based on GaSe Layers: An Ab Initio Study
Kuc, A. B., Cusati, T., Dib, E., et al. (2017) · Advanced Electronic Materials · doi:10.1002/aelm.201600399 · Cited by 33
Morphological control of SnTe nanostructures by tuning catalyst composition
Zou, Y., Chen, Z., Lin, J., et al. (2015) · Nano Research · doi:10.1007/s12274-015-0806-y · Cited by 24
Cao, M., Cheng, B., Li, X., et al. (2015) · Journal of Materials Chemistry C · doi:10.1039/c5tc00451a · Cited by 22
Cited by
Van der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Self-citationSilicon/2D-material photodetectors: from near-infrared to mid-infrared
Liu, C., Guo, J., Yu, L., Li, J., Zhang, M., Li, H., Shi, Y., & Dai, D. (2021) · Light: Science & Applications · doi:10.1038/s41377-021-00551-4 · Cited by 473
Size-dependent phononic thermal transport in low-dimensional nanomaterials
Zhang, Z., Ouyang, Y., Cheng, Y., Chen, J., Li, N., & Zhang, G. (2020) · Physics Reports · doi:10.1016/j.physrep.2020.03.001 · Cited by 341
EGFET-Based Sensors for Bioanalytical Applications: A Review
Pullano, S. A., Critello, C. D., Mahbub, I., Tasneem, N. T., Shamsir, S., Islam, S. K., Greco, M., & Fiorillo, A. S. (2018) · Sensors · doi:10.3390/s18114042 · Cited by 197
Metadata
- Authors
- Liu, Y., Duan, X., Huang, Y., & Duan, X.
- Venue
- Chemical Society Reviews
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2018
- Volume
- 47
- Issue
- 16
- Pages
- 6388-6409
- ISSN
- 0306-0012 (ISSN-L)
- 1460-4744
- OpenAlex
- W2887379298
- Cited by
- 474
- References
- 158
- FWCI
- 1.70
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.