The DOI matches its Crossref record; 210 of the 210 references it cites were found in a registry or an index.
Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
Open accessAbstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal-semiconductor and dielectric-semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
The chemistry of graphene oxide
Dreyer, D. R., Park, S., Bielawski, C. W., & Ruoff, R. S. (2010) · Chem. Soc. Rev. · doi:10.1039/b917103g · Cited by 11,653
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
Black phosphorus field-effect transistors
Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., Wu, H., Feng, D., Chen, X. H., & Zhang, Y. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.35 · Cited by 8,413
Boron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
Chemical methods for the production of graphenes
Park, S., & Ruoff, R. S. (2009) · Nature Nanotechnology · doi:10.1038/nnano.2009.58 · Cited by 6,663
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
Liu, H., Neal, A. T., Zhu, Z., Luo, Z., Xu, X., Tománek, D., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn501226z · Cited by 6,480
Schwierz, F. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.89 · Cited by 5,267
Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals
Zhao, L.-D., Lo, S.-H., Zhang, Y., Sun, H., Tan, G., Uher, C., Wolverton, C., Dravid, V. P., & Kanatzidis, M. G. (2014) · Nature · doi:10.1038/nature13184 · Cited by 5,218
Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
Xiao, D., Liu, G.-B., Feng, W., Xu, X., & Yao, W. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.196802 · Cited by 5,152
Ultrasensitive photodetectors based on monolayer MoS2
Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A., & Kis, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.100 · Cited by 5,043
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
Qiao, J., Kong, X., Hu, Z.-X., Yang, F., & Ji, W. (2014) · Nature Communications · doi:10.1038/ncomms5475 · Cited by 4,442
Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
Elias, D. C., Nair, R. R., Mohiuddin, T. M. G., Morozov, S. V., Blake, P., Halsall, M. P., Ferrari, A. C., Boukhvalov, D. W., Katsnelson, M. I., Geim, A. K., et al. (2009) · Science · doi:10.1126/science.1167130 · Cited by 4,163
Photoluminescence from Chemically Exfoliated MoS 2
Eda, G., Yamaguchi, H., Voiry, D., Fujita, T., Chen, M., & Chhowalla, M. (2011) · Nano Letters · doi:10.1021/nl201874w · Cited by 3,896
Xia, F., Wang, H., & Jia, Y. (2014) · Nature Communications · doi:10.1038/ncomms5458 · Cited by 3,516
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
Tightly bound trions in monolayer MoS2
Mak, K. F., He, K., Lee, C., Lee, G. H., Hone, J., Heinz, T. F., & Shan, J. (2013) · Nature Materials · doi:10.1038/nmat3505 · Cited by 2,865
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Self-citationGraphene‐Based Materials: Synthesis, Characterization, Properties, and Applications
Huang, X., Yin, Z., Wu, S., Qi, X., He, Q., Zhang, Q., Yan, Q., Boey, F., & Zhang, H. (2011) · Small · doi:10.1002/smll.201002009 · Cited by 2,569
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
Chernikov, A., Berkelbach, T. C., Hill, H. M., Rigosi, A., Li, Y., Aslan, B., Reichman, D. R., Hybertsen, M. S., & Heinz, T. F. (2014) · Physical Review Letters · doi:10.1103/physrevlett.113.076802 · Cited by 2,546
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
Tran, V., Soklaski, R., Liang, Y., & Yang, L. (2014) · Physical Review B · doi:10.1103/physrevb.89.235319 · Cited by 2,337
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
Zhou, W., Zou, X., Najmaei, S., Liu, Z., Shi, Y., Kong, J., Lou, J., Ajayan, P. M., Yakobson, B. I., & Idrobo, J.-C. (2013) · Nano Letters · doi:10.1021/nl4007479 · Cited by 2,220
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
van der Zande, A. M., Huang, P. Y., Chenet, D. A., Berkelbach, T. C., You, Y., Lee, G.-H., Heinz, T. F., Reichman, D. R., Muller, D. A., & Hone, J. C. (2013) · Nature Materials · doi:10.1038/nmat3633 · Cited by 2,197
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Zhao, W., Ghorannevis, Z., Chu, L., Toh, M., Kloc, C., Tan, P.-H., & Eda, G. (2013) · ACS Nano · doi:10.1021/nn305275h · Cited by 2,122
Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe
Zhao, L.-D., Tan, G., Hao, S., He, J., Pei, Y., Chi, H., Wang, H., Gong, S., Xu, H., Dravid, V. P., et al. (2016) · Science · doi:10.1126/science.aad3749 · Cited by 2,037
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kang, K., Xie, S., Huang, L., Han, Y., Huang, P. Y., Mak, K. F., Kim, C.-J., Muller, D., & Park, J. (2015) · Nature · doi:10.1038/nature14417 · Cited by 1,961
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
Liu, K.-K., Zhang, W., Lee, Y.-H., Lin, Y.-C., Chang, M.-T., Su, C.-Y., Chang, C.-S., Li, H., Shi, Y., Zhang, H., et al. (2012) · Nano Letters · doi:10.1021/nl2043612 · Cited by 1,958
Madelung, O. (2004) · Springer eBooks · doi:10.1007/978-3-642-18865-7 · Cited by 1,938
Ugeda, M. M., Bradley, A. J., Shi, S.-F., da Jornada, F. H., Zhang, Y., Qiu, D. Y., Ruan, W., Mo, S.-K., Hussain, Z., Shen, Z.-X., et al. (2014) · Nature Materials · doi:10.1038/nmat4061 · Cited by 1,866
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Kappera, R., Voiry, D., Yalcin, S. E., Branch, B., Gupta, G., Mohite, A. D., & Chhowalla, M. (2014) · Nature Materials · doi:10.1038/nmat4080 · Cited by 1,847
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
Najmaei, S., Liu, Z., Zhou, W., Zou, X., Shi, G., Lei, S., Yakobson, B. I., Idrobo, J.-C., Ajayan, P. M., & Lou, J. (2013) · Nature Materials · doi:10.1038/nmat3673 · Cited by 1,840
Mobility engineering and a metal–insulator transition in monolayer MoS2
Radisavljevic, B., & Kis, A. (2013) · Nature Materials · doi:10.1038/nmat3687 · Cited by 1,817
Zhu, Z. Y., Cheng, Y. C., & Schwingenschlögl, U. (2011) · Physical Review B · doi:10.1103/physrevb.84.153402 · Cited by 1,675
Li, H., Wu, J., Yin, Z., & Zhang, H. (2014) · Accounts of Chemical Research · doi:10.1021/ar4002312 · Cited by 1,668
Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
Buscema, M., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2014) · Nano Letters · doi:10.1021/nl5008085 · Cited by 1,656
Isolation and characterization of few-layer black phosphorus
Castellanos-Gomez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · 2D Materials · doi:10.1088/2053-1583/1/2/025001 · Cited by 1,621
Observation of electron–hole puddles in graphene using a scanning single-electron transistor
Martin, J., Akerman, N., Ulbricht, G., Lohmann, T., Smet, J. H., von Klitzing, K., & Yacoby, A. (2008) · Nature Physics · doi:10.1038/nphys781 · Cited by 1,566
Strain-Induced Gap Modification in Black Phosphorus
Rodin, A. S., Carvalho, A., & Castro Neto, A. H. (2014) · Physical Review Letters · doi:10.1103/physrevlett.112.176801 · Cited by 1,523
Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
Mouri, S., Miyauchi, Y., & Matsuda, K. (2013) · Nano Letters · doi:10.1021/nl403036h · Cited by 1,517
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
Wood, J. D., Wells, S. A., Jariwala, D., Chen, K.-S., Cho, E., Sangwan, V. K., Liu, X., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · Nano Letters · doi:10.1021/nl5032293 · Cited by 1,491
Self-citationSemiconducting black phosphorus: synthesis, transport properties and electronic applications
Liu, H., Du, Y., Deng, Y., & Ye, P. D. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00257a · Cited by 1,473
The renaissance of black phosphorus
Ling, X., Wang, H., Huang, S., Xia, F., & Dresselhaus, M. S. (2015) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1416581112 · Cited by 1,470
Highly anisotropic and robust excitons in monolayer black phosphorus
Wang, X., Jones, A. M., Seyler, K. L., Tran, V., Jia, Y., Zhao, H., Wang, H., Yang, L., Xu, X., & Xia, F. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.71 · Cited by 1,450
Loh, K. P., Bao, Q., Ang, P. K., & Yang, J. (2010) · Journal of Materials Chemistry · doi:10.1039/b920539j · Cited by 1,450
Tongay, S., Zhou, J., Ataca, C., Lo, K., Matthews, T. S., Li, J., Grossman, J. C., & Wu, J. (2012) · Nano Letters · doi:10.1021/nl302584w · Cited by 1,428
Zhang, Y., Chang, T.-R., Zhou, B., Cui, Y.-T., Yan, H., Liu, Z., Schmitt, F., Lee, J., Moore, R., Chen, Y., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2013.277 · Cited by 1,376
Photooxidation and quantum confinement effects in exfoliated black phosphorus
Favron, A., Gaufrès, E., Fossard, F., Phaneuf-L’Heureux, A.-L., Tang, N. Y.-W., Lévesque, P. L., Loiseau, A., Leonelli, R., Francoeur, S., & Martel, R. (2015) · Nature Materials · doi:10.1038/nmat4299 · Cited by 1,376
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Cui, X., Lee, G.-H., Kim, Y. D., Arefe, G., Huang, P. Y., Lee, C.-H., Chenet, D. A., Zhang, X., Wang, L., Ye, F., et al. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.70 · Cited by 1,354
Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
Yuan, H., Liu, X., Afshinmanesh, F., Li, W., Xu, G., Sun, J., Lian, B., Curto, A. G., Ye, G., Hikita, Y., et al. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.112 · Cited by 1,353
Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride
Xue, J., Sanchez-Yamagishi, J., Bulmash, D., Jacquod, P., Deshpande, A., Watanabe, K., Taniguchi, T., Jarillo-Herrero, P., & LeRoy, B. J. (2011) · Nature Materials · doi:10.1038/nmat2968 · Cited by 1,333
Phase engineering of transition metal dichalcogenides
Voiry, D., Mohite, A., & Chhowalla, M. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00151j · Cited by 1,327
(2012) · doi:10.1103/physrevb.85.033305 · Cited by 1,307
Zhang, X., Qiao, X.-F., Shi, W., Wu, J.-B., Jiang, D.-S., & Tan, P.-H. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00282b · Cited by 1,299
Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
Fei, R., & Yang, L. (2014) · Nano Letters · doi:10.1021/nl500935z · Cited by 1,282
Carbon Nanotubes as Schottky Barrier Transistors
Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J., & Avouris, P. (2002) · Physical Review Letters · doi:10.1103/physrevlett.89.106801 · Cited by 1,270
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
Nan, H., Wang, Z., Wang, W., Liang, Z., Lu, Y., Chen, Q., He, D., Tan, P., Miao, F., Wang, X., et al. (2014) · ACS Nano · doi:10.1021/nn500532f · Cited by 1,244
Near-unity photoluminescence quantum yield in MoS 2
Amani, M., Lien, D.-H., Kiriya, D., Xiao, J., Azcatl, A., Noh, J., Madhvapathy, S. R., Addou, R., KC, S., Dubey, M., et al. (2015) · Science · doi:10.1126/science.aad2114 · Cited by 1,239
Electric field effect in ultrathin black phosphorus
Koenig, S. P., Doganov, R. A., Schmidt, H., Castro Neto, A. H., & Özyilmaz, B. (2014) · Applied Physics Letters · doi:10.1063/1.4868132 · Cited by 1,223
Hopping transport through defect-induced localized states in molybdenum disulphide
Qiu, H., Xu, T., Wang, Z., Ren, W., Nan, H., Ni, Z., Chen, Q., Yuan, S., Miao, F., Song, F., et al. (2013) · Nature Communications · doi:10.1038/ncomms3642 · Cited by 1,193
Isolation and characterization of few-layer black phosphorus
Castellanos-Gómez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Científicas) · Cited by 1,171
Komsa, H.-P., Kotakoski, J., Kurasch, S., Lehtinen, O., Kaiser, U., & Krasheninnikov, A. V. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.035503 · Cited by 1,168
Symmetry-dependent phonon renormalization in monolayer MoS2transistor
Chakraborty, B., Bera, A., Muthu, D. V. S., Bhowmick, S., Waghmare, U. V., & Sood, A. K. (2012) · Physical Review B · doi:10.1103/physrevb.85.161403 · Cited by 1,140
Properties of Fluorinated Graphene Films
Robinson, J. T., Burgess, J. S., Junkermeier, C. E., Badescu, S. C., Reinecke, T. L., Perkins, F. K., Zalalutdniov, M. K., Baldwin, J. W., Culbertson, J. C., Sheehan, P. E., et al. (2010) · Nano Letters · doi:10.1021/nl101437p · Cited by 1,131
Hanlon, D., Backes, C., Doherty, E., Cucinotta, C. S., Berner, N. C., Boland, C., Lee, K., Harvey, A., Lynch, P., Gholamvand, Z., et al. (2015) · Nature Communications · doi:10.1038/ncomms9563 · Cited by 1,104
Superior mechanical flexibility of phosphorene and few-layer black phosphorus
Wei, Q., & Peng, X. (2014) · Applied Physics Letters · doi:10.1063/1.4885215 · Cited by 1,086
Electronic structure of two-dimensional crystals from ab initio theory
Lebègue, S., & Eriksson, O. (2009) · Physical Review B · doi:10.1103/physrevb.79.115409 · Cited by 1,057
HgCdTe infrared detector material: history, status and outlook
Rogalski, A. (2005) · Reports on Progress in Physics · doi:10.1088/0034-4885/68/10/r01 · Cited by 1,047
Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I–V Response
Kou, L., Frauenheim, T., & Chen, C. (2014) · The Journal of Physical Chemistry Letters · doi:10.1021/jz501188k · Cited by 1,045
Electroluminescence in Single Layer MoS2
Sundaram, R. S., Engel, M., Lombardo, A., Krupke, R., Ferrari, A. C., Avouris, P., & Steiner, M. (2013) · Nano Letters · doi:10.1021/nl400516a · Cited by 1,007
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
Liu, W., Kang, J., Sarkar, D., Khatami, Y., Jena, D., & Banerjee, K. (2013) · Nano Letters · doi:10.1021/nl304777e · Cited by 985
Peng, X., Wei, Q., & Copple, A. (2014) · Physical Review B · doi:10.1103/physrevb.90.085402 · Cited by 958
Environmental instability of few-layer black phosphorus
Island, J. O., Steele, G. A., Zant, H. S. J. V. D., & Castellanos-Gomez, A. (2015) · 2D Materials · doi:10.1088/2053-1583/2/1/011002 · Cited by 954
Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus
Kim, J., Baik, S. S., Ryu, S. H., Sohn, Y., Park, S., Park, B.-G., Denlinger, J., Yi, Y., Choi, H. J., & Kim, K. S. (2015) · Science · doi:10.1126/science.aaa6486 · Cited by 949
Sun, J., Zheng, G., Lee, H.-W., Liu, N., Wang, H., Yao, H., Yang, W., & Cui, Y. (2014) · Nano Letters · doi:10.1021/nl501617j · Cited by 920
Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
Cai, Y., Zhang, G., & Zhang, Y.-W. (2014) · Scientific Reports · doi:10.1038/srep06677 · Cited by 894
Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Ghatak, S., Pal, A. N., & Ghosh, A. (2011) · ACS Nano · doi:10.1021/nn202852j · Cited by 865
High‐Quality Black Phosphorus Atomic Layers by Liquid‐Phase Exfoliation
Yasaei, P., Kumar, B., Foroozan, T., Wang, C., Asadi, M., Tuschel, D., Indacochea, J. E., Klie, R. F., & Salehi‐Khojin, A. (2015) · Advanced Materials · doi:10.1002/adma.201405150 · Cited by 829
Phosphorene: Fabrication, Properties, and Applications
Kou, L., Chen, C., & Smith, S. C. (2015) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.5b01094 · Cited by 825
Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
Wang, X., Gong, Y., Shi, G., Chow, W. L., Keyshar, K., Ye, G., Vajtai, R., Lou, J., Liu, Z., Ringe, E., et al. (2014) · ACS Nano · doi:10.1021/nn501175k · Cited by 818
Channel Length Scaling of MoS2 MOSFETs
Liu, H., Neal, A. T., & Ye, P. D. (2012) · ACS Nano · doi:10.1021/nn303513c · Cited by 816
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
Gong, C., Colombo, L., Wallace, R. M., & Cho, K. (2014) · Nano Letters · doi:10.1021/nl403465v · Cited by 806
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
Kang, J., Liu, W., Sarkar, D., Jena, D., & Banerjee, K. (2014) · Physical Review X · doi:10.1103/physrevx.4.031005 · Cited by 779
Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering
Voiry, D., Goswami, A., Kappera, R., Silva, C. D. C. C. E., Kaplan, D., Fujita, T., Chen, M., Asefa, T., & Chhowalla, M. (2015) · Nature Chemistry · doi:10.1038/nchem.2108 · Cited by 765
Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors
Cui, S., Pu, H., Wells, S. A., Wen, Z., Mao, S., Chang, J., Hersam, M. C., & Chen, J. (2015) · Nature Communications · doi:10.1038/ncomms9632 · Cited by 763
Self-citationDegenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
Fang, H., Tosun, M., Seol, G., Chang, T. C., Takei, K., Guo, J., & Javey, A. (2013) · Nano Letters · doi:10.1021/nl400044m · Cited by 760
Chloride Molecular Doping Technique on 2D Materials: WS 2 and MoS 2
Yang, L., Majumdar, K., Liu, H., Du, Y., Wu, H., Hatzistergos, M., Hung, P. Y., Tieckelmann, R., Tsai, W., Hobbs, C., et al. (2014) · Nano Letters · doi:10.1021/nl502603d · Cited by 758
Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus
Kang, J., Wood, J. D., Wells, S. A., Lee, J.-H., Liu, X., Chen, K.-S., & Hersam, M. C. (2015) · ACS Nano · doi:10.1021/acsnano.5b01143 · Cited by 749
Self-citationEnhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
Fei, R., Faghaninia, A., Soklaski, R., Yan, J.-A., Lo, C., & Yang, L. (2014) · Nano Letters · doi:10.1021/nl502865s · Cited by 748
Abbas, A. N., Liu, B., Chen, L., Ma, Y., Cong, S., Aroonyadet, N., Köpf, M., Nilges, T., & Zhou, C. (2015) · ACS Nano · doi:10.1021/acsnano.5b01961 · Cited by 735
Zhang, X., Qiao, X., Shi, W., Wu, J., Jiang, D., & Tan, P. (2015) · SEMI-IR · Cited by 731
Tunable optical properties of multilayer black phosphorus thin films
Low, T., Rodin, A. S., Carvalho, A., Jiang, Y., Wang, H., Xia, F., & Castro Neto, A. H. (2014) · Physical Review B · doi:10.1103/physrevb.90.075434 · Cited by 722
Zhang, X., Xie, H., Liu, Z., Tan, C., Luo, Z., Li, H., Lin, J., Sun, L., Chen, W., Xu, Z., et al. (2015) · Angewandte Chemie International Edition · doi:10.1002/anie.201409400 · Cited by 710
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Sangwan, V. K., Jariwala, D., Kim, I. S., Chen, K.-S., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.56 · Cited by 709
Self-citationAir-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen
Kiriya, D., Tosun, M., Zhao, P., Kang, J. S., & Javey, A. (2014) · Journal of the American Chemical Society · doi:10.1021/ja5033327 · Cited by 702
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
Suh, J., Park, T.-E., Lin, D.-Y., Fu, D., Park, J., Jung, H. J., Chen, Y., Ko, C., Jang, C., Sun, Y., et al. (2014) · Nano Letters · doi:10.1021/nl503251h · Cited by 694
Zhang, S., Yang, J., Xu, R., Wang, F., Li, W., Ghufran, M., Zhang, Y.-W., Yu, Z., Zhang, G., Qin, Q., et al. (2014) · ACS Nano · doi:10.1021/nn503893j · Cited by 688
Nanomaterials in transistors: From high-performance to thin-film applications
Franklin, A. D. (2015) · Science · doi:10.1126/science.aab2750 · Cited by 660
Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys
Chen, Y., Xi, J., Dumcenco, D. O., Liu, Z., Suenaga, K., Wang, D., Shuai, Z., Huang, Y.-S., & Xie, L. (2013) · ACS Nano · doi:10.1021/nn401420h · Cited by 638
Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2013) · Nano Letters · doi:10.1021/nl401916s · Cited by 628
Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
Chang, Y.-H., Zhang, W., Zhu, Y., Han, Y., Pu, J., Chang, J.-K., Hsu, W.-T., Huang, J.-K., Hsu, C.-L., Chiu, M.-H., et al. (2014) · ACS Nano · doi:10.1021/nn503287m · Cited by 610
Ziletti, A., Carvalho, A., Campbell, D. K., Coker, D. F., & Castro Neto, A. H. (2015) · Physical Review Letters · doi:10.1103/physrevlett.114.046801 · Cited by 602
Semiconducting black phosphorus
Morita, A. (1986) · Applied Physics A Solids and Surfaces · doi:10.1007/bf00617267 · Cited by 596
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Larentis, S., Fallahazad, B., & Tutuc, E. (2012) · Applied Physics Letters · doi:10.1063/1.4768218 · Cited by 591
Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition
Liu, Z., Amani, M., Najmaei, S., Xu, Q., Zou, X., Zhou, W., Yu, T., Qiu, C., Birdwell, A. G., Crowne, F. J., et al. (2014) · Nature Communications · doi:10.1038/ncomms6246 · Cited by 589
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
Choi, M. S., Qu, D., Lee, D., Liu, X., Watanabe, K., Taniguchi, T., & Yoo, W. J. (2014) · ACS Nano · doi:10.1021/nn503284n · Cited by 588
Qiu, H., Pan, L., Yao, Z., Li, J., Shi, Y., & Wang, X. (2012) · Applied Physics Letters · doi:10.1063/1.3696045 · Cited by 586
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
Chuang, S., Battaglia, C., Azcatl, A., McDonnell, S., Kang, J. S., Yin, X., Tosun, M., Kapadia, R., Fang, H., Wallace, R. M., et al. (2014) · Nano Letters · doi:10.1021/nl4043505 · Cited by 575
Designing Electrical Contacts toMoS2Monolayers: A Computational Study
Popov, I., Seifert, G., & Tománek, D. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.156802 · Cited by 572
The Electrical Properties of Black Phosphorus
Keyes, R. W. (1953) · Physical Review · doi:10.1103/physrev.92.580 · Cited by 565
Producing air-stable monolayers of phosphorene and their defect engineering
Pei, J., Gai, X., Yang, J., Wang, X., Yu, Z., Choi, D.-Y., Luther-Davies, B., & Lu, Y. (2016) · Nature Communications · doi:10.1038/ncomms10450 · Cited by 546
Jin, W., Yeh, P.-C., Zaki, N., Zhang, D., Sadowski, J. T., Al-Mahboob, A., van der Zande, A. M., Chenet, D. A., Dadap, J. I., Herman, I. P., et al. (2013) · Physical Review Letters · doi:10.1103/physrevlett.111.106801 · Cited by 540
Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide
Gong, Y., Liu, Z., Lupini, A. R., Shi, G., Lin, J., Najmaei, S., Lin, Z., Elías, A. L., Berkdemir, A., You, G., et al. (2014) · Nano Letters · doi:10.1021/nl4032296 · Cited by 536
Henini, M. (2004) · Microelectronics Journal · doi:10.1016/j.mejo.2004.04.001 · Cited by 532
Doganov, R. A., O’Farrell, E. C. T., Koenig, S. P., Yeo, Y., Ziletti, A., Carvalho, A., Campbell, D. K., Coker, D. F., Watanabe, K., Taniguchi, T., et al. (2015) · Nature Communications · doi:10.1038/ncomms7647 · Cited by 521
Li, H., Duan, X., Wu, X., Zhuang, X., Zhou, H., Zhang, Q., Zhu, X., Hu, W., Ren, P., Guo, P., et al. (2014) · Journal of the American Chemical Society · doi:10.1021/ja500069b · Cited by 520
Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
Braga, D., Gutiérrez Lezama, I., Berger, H., & Morpurgo, A. F. (2012) · Nano Letters · doi:10.1021/nl302389d · Cited by 519
Single-Layer Single-Crystalline SnSe Nanosheets
Li, L., Chen, Z., Hu, Y., Wang, X., Zhang, T., Chen, W., & Wang, Q. (2013) · Journal of the American Chemical Society · doi:10.1021/ja3108017 · Cited by 498
Avsar, A., Vera-Marun, I. J., Tan, J. Y., Watanabe, K., Taniguchi, T., Castro Neto, A. H., & Özyilmaz, B. (2015) · ACS Nano · doi:10.1021/acsnano.5b00289 · Cited by 497
Gomes, L. C., & Carvalho, A. (2015) · Physical Review B · doi:10.1103/physrevb.92.085406 · Cited by 495
Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers
Zhou, H., Wang, C., Shaw, J. C., Cheng, R., Chen, Y., Huang, X., Liu, Y., Weiss, N. O., Lin, Z., Huang, Y., et al. (2015) · Nano Letters · doi:10.1021/nl504256y · Cited by 495
Liu, Q., Zhang, X., Abdalla, L. B., Fazzio, A., & Zunger, A. (2015) · Nano Letters · doi:10.1021/nl5043769 · Cited by 485
Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
Schmidt, H., Wang, S., Chu, L., Toh, M., Kumar, R., Zhao, W., Castro Neto, A. H., Martin, J., Adam, S., Özyilmaz, B., et al. (2014) · Nano Letters · doi:10.1021/nl4046922 · Cited by 484
Liu, B., Köpf, M., Abbas, A. N., Wang, X., Guo, Q., Jia, Y., Xia, F., Weihrich, R., Bachhuber, F., Pielnhofer, F., et al. (2015) · Advanced Materials · doi:10.1002/adma.201501758 · Cited by 473
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
Lin, Y., Xu, Y., Wang, S., Li, S., Yamamoto, M., Aparecido‐Ferreira, A., Li, W., Sun, H., Nakaharai, S., Jian, W., et al. (2014) · Advanced Materials · doi:10.1002/adma.201305845 · Cited by 473
Zhu, W., Low, T., Lee, Y.-H., Wang, H., Farmer, D. B., Kong, J., Xia, F., & Avouris, P. (2014) · Nature Communications · doi:10.1038/ncomms4087 · Cited by 467
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Cao, Y., Mishchenko, A., Yu, G. L., Khestanova, E., Rooney, A. P., Prestat, E., Kretinin, A. V., Blake, P., Shalom, M. B., Woods, C., et al. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00648 · Cited by 455
Zhang, C., Johnson, A., Hsu, C.-L., Li, L.-J., & Shih, C.-K. (2014) · Nano Letters · doi:10.1021/nl501133c · Cited by 453
Single-Crystal Colloidal Nanosheets of GeS and GeSe
Vaughn, D. D., Patel, R. J., Hickner, M. A., & Schaak, R. E. (2010) · Journal of the American Chemical Society · doi:10.1021/ja107520b · Cited by 436
Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode
Jariwala, D., Sangwan, V. K., Wu, C.-C., Prabhumirashi, P. L., Geier, M. L., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1317226110 · Cited by 436
Self-citationFlexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator
Zhu, W., Yogeesh, M. N., Yang, S., Aldave, S. H., Kim, J.-S., Sonde, S., Tao, L., Lu, N., & Akinwande, D. (2015) · Nano Letters · doi:10.1021/nl5047329 · Cited by 428
Du, Y., Liu, H., Deng, Y., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn502553m · Cited by 420
Toward air-stable multilayer phosphorene thin-films and transistors
Kim, J.-S., Liu, Y., Zhu, W., Kim, S., Wu, D., Tao, L., Dodabalapur, A., Lai, K., & Akinwande, D. (2015) · Scientific Reports · doi:10.1038/srep08989 · Cited by 408
Energetics, Charge Transfer, and Magnetism of Small Molecules Physisorbed on Phosphorene
Cai, Y., Ke, Q., Zhang, G., & Zhang, Y.-W. (2015) · The Journal of Physical Chemistry C · doi:10.1021/jp510863p · Cited by 408
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
Jariwala, D., Sangwan, V. K., Late, D. J., Johns, J. E., Dravid, V. P., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013) · Applied Physics Letters · doi:10.1063/1.4803920 · Cited by 399
Self-citationAmbipolar Phosphorene Field Effect Transistor
Das, S., Demarteau, M., & Roelofs, A. (2014) · ACS Nano · doi:10.1021/nn505868h · Cited by 398
Structure of single-molecular-layerMoS2
Yang, D., Sandoval, S. J., Divigalpitiya, W. M. R., Irwin, J. C., & Frindt, R. F. (1991) · Physical Review B · doi:10.1103/physrevb.43.12053 · Cited by 391
Wu, J., Mao, N., Xie, L., Xu, H., & Zhang, J. (2015) · Angewandte Chemie International Edition · doi:10.1002/anie.201410108 · Cited by 385
Xiang, D., Han, C., Wu, J., Zhong, S., Liu, Y., Lin, J., Zhang, X.-A., Ping Hu, W., Özyilmaz, B., Neto, A. H. C., et al. (2015) · Nature Communications · doi:10.1038/ncomms7485 · Cited by 383
Field-Effect Transistors Based on Few-Layered α-MoTe2
Pradhan, N. R., Rhodes, D., Feng, S., Xin, Y., Memaran, S., Moon, B.-H., Terrones, H., Terrones, M., & Balicas, L. (2014) · ACS Nano · doi:10.1021/nn501013c · Cited by 378
Basal-Plane Functionalization of Chemically Exfoliated Molybdenum Disulfide by Diazonium Salts
Knirsch, K. C., Berner, N. C., Nerl, H. C., Cucinotta, C. S., Gholamvand, Z., McEvoy, N., Wang, Z., Abramovic, I., Vecera, P., Halik, M., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b00965 · Cited by 369
Unusual Angular Dependence of the Raman Response in Black Phosphorus
Ribeiro, H. B., Pimenta, M. A., de Matos, C. J. S., Moreira, R. L., Rodin, A. S., Zapata, J. D., de Souza, E. A. T., & Castro Neto, A. H. (2015) · ACS Nano · doi:10.1021/acsnano.5b00698 · Cited by 366
Creating a Stable Oxide at the Surface of Black Phosphorus
Edmonds, M. T., Tadich, A., Carvalho, A., Ziletti, A., O’Donnell, K. M., Koenig, S. P., Coker, D. F., Özyilmaz, B., Neto, A. H. C., & Fuhrer, M. S. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b01297 · Cited by 365
Optical tuning of exciton and trion emissions in monolayer phosphorene
Yang, J., Xu, R., Pei, J., Myint, Y. W., Wang, F., Wang, Z., Zhang, S., Yu, Z., & Lu, Y. (2015) · Light: Science & Applications · doi:10.1038/lsa.2015.85 · Cited by 363
Bandgap, Mid-Gap States, and Gating Effects in MoS2
Lu, C.-P., Li, G., Mao, J., Wang, L.-M., & Andrei, E. Y. (2014) · Nano Letters · doi:10.1021/nl501659n · Cited by 361
Zou, X., Liu, Y., & Yakobson, B. I. (2013) · Nano Letters · doi:10.1021/nl3040042 · Cited by 358
Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
Li, S.-L., Wakabayashi, K., Xu, Y., Nakaharai, S., Komatsu, K., Li, W.-W., Lin, Y.-F., Aparecido-Ferreira, A., & Tsukagoshi, K. (2013) · Nano Letters · doi:10.1021/nl4010783 · Cited by 357
Kim, I. S., Sangwan, V. K., Jariwala, D., Wood, J. D., Park, S., Chen, K.-S., Shi, F., Ruiz-Zepeda, F., Ponce, A., Jose-Yacaman, M., et al. (2014) · ACS Nano · doi:10.1021/nn503988x · Cited by 357
Self-citationTuning of the electronic and optical properties of single-layer black phosphorus by strain
Çakır, D., Sahin, H., & Peeters, F. M. (2014) · Physical Review B · doi:10.1103/physrevb.90.205421 · Cited by 342
Crystal Structures Adopted by Black Phosphorus at High Pressures
Jamieson, J. C. (1963) · Science · doi:10.1126/science.139.3561.1291 · Cited by 338
Ahn, J.-H., Lee, M.-J., Heo, H., Sung, J. H., Kim, K., Hwang, H., & Jo, M.-H. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00079 · Cited by 336
Yang, Z., Hao, J., Yuan, S., Lin, S., Yau, H. M., Dai, J., & Lau, S. P. (2015) · Advanced Materials · doi:10.1002/adma.201500990 · Cited by 330
Black Phosphorus Radio-Frequency Transistors
Wang, H., Wang, X., Xia, F., Wang, L., Jiang, H., Xia, Q., Chin, M. L., Dubey, M., & Han, S.-J. (2014) · Nano Letters · doi:10.1021/nl5029717 · Cited by 330
Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films
Li, L., Ye, G. J., Tran, V., Fei, R., Chen, G., Wang, H., Wang, J., Watanabe, K., Taniguchi, T., Yang, L., et al. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.91 · Cited by 312
Nonblinking, Intense Two-Dimensional Light Emitter: Monolayer WS2 Triangles
Peimyoo, N., Shang, J., Cong, C., Shen, X., Wu, X., Yeow, E. K. L., & Yu, T. (2013) · ACS Nano · doi:10.1021/nn4046002 · Cited by 308
Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field
Li, Y., Yang, S., & Li, J. (2014) · The Journal of Physical Chemistry C · doi:10.1021/jp506881v · Cited by 300
Electronic Structure of Black Phosphorus in Tight Binding Approach
Takao, Y., Asahina, H., & Morita, A. (1981) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.50.3362 · Cited by 290
Hwang, W. S., Remškar, M., Yan, R., Protasenko, V. V., Tahy, K., Chae, S. D., Zhao, P., Konar, A., Xing, H. G., Seabaugh, A., et al. (2012) · Applied Physics Letters · doi:10.1063/1.4732522 · Cited by 284
Metal to Insulator Transition in Epitaxial Graphene Induced by Molecular Doping
Zhou, S. Y., Siegel, D. A., Fedorov, A. V., & Lanzara, A. (2008) · Physical Review Letters · doi:10.1103/physrevlett.101.086402 · Cited by 280
Where Does the Current Flow in Two-Dimensional Layered Systems?
Das, S., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl401831u · Cited by 268
Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene
Ong, Z.-Y., Cai, Y., Zhang, G., & Zhang, Y.-W. (2014) · The Journal of Physical Chemistry C · doi:10.1021/jp5079357 · Cited by 265
Air Stable p-Doping of WSe2 by Covalent Functionalization
Zhao, P., Kiriya, D., Azcatl, A., Zhang, C., Tosun, M., Liu, Y.-S., Hettick, M., Kang, J. S., McDonnell, S., KC, S., et al. (2014) · ACS Nano · doi:10.1021/nn5047844 · Cited by 260
Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus
Jang, H., Wood, J. D., Ryder, C. R., Hersam, M. C., & Cahill, D. G. (2015) · Advanced Materials · doi:10.1002/adma.201503466 · Cited by 259
Self-citationLiu, H., Si, M., Deng, Y., Neal, A. T., Du, Y., Najmaei, S., Ajayan, P. M., Lou, J., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn405916t · Cited by 254
Du, Y., Liu, H., Neal, A. T., Si, M., & Ye, P. D. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2013.2277311 · Cited by 253
Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe2
Lehtinen, O., Komsa, H.-P., Pulkin, A., Whitwick, M. B., Chen, M.-W., Lehnert, T., Mohn, M. J., Yazyev, O. V., Kis, A., Kaiser, U., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b00410 · Cited by 251
Lin, J. D., Han, C., Wang, F., Wang, R., Xiang, D., Qin, S., Zhang, X.-A., Wang, L., Zhang, H., Wee, A. T. S., et al. (2014) · ACS Nano · doi:10.1021/nn501580c · Cited by 249
Gillgren, N., Wickramaratne, D., Shi, Y., Espiritu, T., Yang, J., Hu, J., Wei, J., Liu, X., Mao, Z., Watanabe, K., et al. (2014) · 2D Materials · doi:10.1088/2053-1583/2/1/011001 · Cited by 247
Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide
Azizi, A., Zou, X., Ercius, P., Zhang, Z., Elías, A. L., Perea-López, N., Stone, G., Terrones, M., Yakobson, B. I., & Alem, N. (2014) · Nature Communications · doi:10.1038/ncomms5867 · Cited by 244
In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
Liu, X., Wood, J. D., Chen, K.-S., Cho, E., & Hersam, M. C. (2015) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.5b00043 · Cited by 238
Self-citationAtomic Covalent Functionalization of Graphene
Johns, J. E., & Hersam, M. C. (2013) · Accounts of Chemical Research · doi:10.1021/ar300143e · Cited by 235
Self-citationLiu, H., Han, N., & Zhao, J. (2015) · RSC Advances · doi:10.1039/c4ra17320a · Cited by 234
Cai, Y., Ke, Q., Zhang, G., Feng, Y. P., Shenoy, V. B., & Zhang, Y. (2015) · Advanced Functional Materials · doi:10.1002/adfm.201404294 · Cited by 233
Manipulating the electronic and chemical properties of graphene via molecular functionalization
Mao, H. Y., Lu, Y. H., Lin, J. D., Zhong, S., Wee, A. T. S., & Chen, W. (2013) · Progress in Surface Science · doi:10.1016/j.progsurf.2013.02.001 · Cited by 209
Lin, J., Pantelides, S. T., & Zhou, W. (2015) · ACS Nano · doi:10.1021/acsnano.5b00554 · Cited by 207
Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus
Ling, X., Liang, L., Huang, S., Puretzky, A. A., Geohegan, D. B., Sumpter, B. G., Kong, J., Meunier, V., & Dresselhaus, M. S. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b01117 · Cited by 204
Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors
Park, W., Park, J., Jang, J., Lee, H., Jeong, H., Cho, K., Hong, S., & Lee, T. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/9/095202 · Cited by 204
Electronic structure of black phosphorus: Tight binding approach
Takao, Y., & Morita, A. (1981) · Physica B+C · doi:10.1016/0378-4363(81)90222-9 · Cited by 200
Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2by Hydrohalic Acid Treatment
Han, H.-V., Lu, A.-Y., Lu, L.-S., Huang, J.-K., Li, H., Hsu, C.-L., Lin, Y.-C., Chiu, M.-H., Suenaga, K., Chu, C.-W., et al. (2016) · ACS Nano · doi:10.1021/acsnano.5b06960 · Cited by 200
Environmental Changes in MoTe2 Excitonic Dynamics by Defects-Activated Molecular Interaction
Chen, B., Sahin, H., Suslu, A., Ding, L., Bertoni, M. I., Peeters, F. M., & Tongay, S. (2015) · ACS Nano · doi:10.1021/acsnano.5b00985 · Cited by 197
Comparative Study of Raman Spectroscopy in Graphene and MoS2-type Transition Metal Dichalcogenides
Pimenta, M. A., del Corro, E., Carvalho, B. R., Fantini, C., & Malard, L. M. (2015) · Accounts of Chemical Research · doi:10.1021/ar500280m · Cited by 196
Recent developments in black phosphorus transistors
Du, H., Lin, X., Xu, Z., & Chu, D. (2015) · Journal of Materials Chemistry C · doi:10.1039/c5tc01484k · Cited by 192
Synthesis and Defect Investigation of Two-Dimensional Molybdenum Disulfide Atomic Layers
Najmaei, S., Yuan, J., Zhang, J., Ajayan, P., & Lou, J. (2015) · Accounts of Chemical Research · doi:10.1021/ar500291j · Cited by 180
Yang, J.-H., Zhang, Y., Yin, W.-J., Gong, X. G., Yakobson, B. I., & Wei, S.-H. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b04341 · Cited by 173
High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide
Liu, X., Hu, J., Yue, C., Della Fera, N., Ling, Y., Mao, Z., & Wei, J. (2014) · ACS Nano · doi:10.1021/nn505253p · Cited by 166
Synthesis of thin-film black phosphorus on a flexible substrate
Li, X., Deng, B., Wang, X., Chen, S., Vaisman, M., Karato, S.-I., Pan, G., Lee, M. L., Cha, J. J., Wang, H., et al. (2015) · 2D Materials · doi:10.1088/2053-1583/2/3/031002 · Cited by 163
Makarova, M., Okawa, Y., & Aono, M. (2012) · The Journal of Physical Chemistry C · doi:10.1021/jp307267h · Cited by 163
Kang, J., Seo, J.-W. T., Alducin, D., Ponce, A., Yacamán, M. J., & Hersam, M. C. (2014) · Nature Communications · doi:10.1038/ncomms6478 · Cited by 152
Self-citationSolvatochromic Effect on the Photoluminescence of MoS2 Monolayers
Mao, N., Chen, Y., Liu, D., Zhang, J., & Xie, L. (2013) · Small · doi:10.1002/smll.201202982 · Cited by 150
Covalent Chemistry for Graphene Electronics
Niyogi, S., Bekyarova, E. B., Hong, J., Khizroev, S., Berger, C., de Heer, W. A., & Haddon, R. C. (2011) · The Journal of Physical Chemistry Letters · doi:10.1021/jz200426d · Cited by 150
Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities
Pradhan, N. R., Rhodes, D. A., Xin, Y., Memaran, S., Bhaskaran, L., Siddiq, M., Hill, S., Ajayan, P. M., & Balicas, L. (2014) · ACS Nano · doi:10.1021/nn501693d · Cited by 135
Controlled argon beam-induced desulfurization of monolayer molybdenum disulfide
Ma, Q., Odenthal, P., Mann, J., Le, D., Wang, C. S., Zhu, Y., Chen, T., Sun, D., Yamaguchi, K., Tran, T., et al. (2013) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/25/25/252201 · Cited by 133
Ma, Q., Isarraraz, M., Wang, C. S., Preciado, E., Klee, V., Bobek, S., Yamaguchi, K., Li, E. Y., Odenthal, P., Nguyen, A. E., et al. (2014) · ACS Nano · doi:10.1021/nn5004327 · Cited by 124
Cited by
Energy storage: The future enabled by nanomaterials
Pomerantseva, E., Bonaccorso, F., Feng, X., Cui, Y., & Gogotsi, Y. (2019) · Science · doi:10.1126/science.aan8285 · Cited by 1,927
Phosphorene: from theory to applications
Carvalho, A., Wang, M., Zhu, X., Rodin, A. S., Su, H., & Castro Neto, A. H. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.61 · Cited by 1,159
Photocatalysis: From Fundamental Principles to Materials and Applications
Yang, X., & Wang, D. (2018) · ACS Applied Energy Materials · doi:10.1021/acsaem.8b01345 · Cited by 770
2D Materials for Optical Modulation: Challenges and Opportunities
Yu, S., Wu, X., Wang, Y., Guo, X., & Tong, L. (2017) · Advanced Materials · doi:10.1002/adma.201606128 · Cited by 553
Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices
Pang, J., Bachmatiuk, A., Yin, Y., Trzebicka, B., Zhao, L., Fu, L., Mendes, R. G., Gemming, T., Liu, Z., & Rummeli, M. H. (2018) · Advanced Energy Materials · doi:10.1002/aenm.201702093 · Cited by 518
Metadata
- Authors
- Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2016-04-04
- Volume
- 10
- Issue
- 4
- Pages
- 3900-3917
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2322418914
- Cited by
- 283
- References
- 210
- FWCI
- 20.81
- Type
- journal article
- Language
- en
- Open access
- hybrid
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.